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May 2008
FDD8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features General Description
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild
Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
Fast Switching superior performance benefit in the application.
RoHS Compliant
Applications
Inverter
Power Supplies
D
G
G
S
D
TO-PA K
-2 52
S
(TO -252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C 50
-Continuous (Silicon limited) TC= 25°C 57
ID A
-Continuous TA= 25°C (Note 1a) 15.2
-Pulsed 100
IS Max Pulse Diode Current 100 A
EAS Drain-Source Avalanche Energy (Note 3) 153 mJ
Power Dissipation TC= 25°C 44
PD TA= 25°C (Note 1a) 3.1 W
TA= 25°C (Note 1b) 1.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 2.8
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 96
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, referenced to 25°C 35 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V
∆VGS(th) Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C -5 mV/°C
∆TJ Temperature Coefficient
VGS = 10V, ID = 14A 7.0 8.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 11A 8.5 11.0 mΩ
VGS = 10V, ID = 14A, TJ=125°C 10.4 14.0
gFS Forward Transconductance VDS = 5V, ID = 14A 58 S
Dynamic Characteristics
Ciss Input Capacitance 1970 pF
VDS = 20V, VGS = 0V,
Coss Output Capacitance 250 pF
f = 1MHz
Crss Reverse Transfer Capacitance 150 pF
Rg Gate Resistance f = 1MHz 1.27 Ω
Switching Characteristics
td(on) Turn-On Delay Time 12 21 ns
VDD = 20V, ID = 1A
tr Rise Time 12 21 ns
VGS = 10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 38 61 ns
tf Fall Time 9 18 ns
Qg(TOT) Total Gate Charge, VGS = 10V 37 52 nC
VDD = 20V, ID = 14A
Qg(TOT) Total Gate Charge, VGS = 5V 20 28 nC
VGS = 10V
Qgs Gate to Source Gate Charge 6 nC
Qgd Gate to Drain “Miller” Charge 7 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
----------------
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25oC, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
100 3
VGS = 10V 4.0V VGS = 3.0V
DRAIN-SOURCE ON-RESISTANCE
2.6
80
6.0V 4.5V
ID, DRAIN CURRENT (A)
5.0V 2.2
NORMALIZED
60
3.5V 1.8
40 3.5V
1.4 4.0V
4.5V 5.0V 6.0V
20 10.0V
1
3.0V
0 0.6
0 0.5 1 1.5 2 2.5 0 20 40 60 80 100
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
1.6 0.02
ID = 14A ID = 7A
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
0.0175
rDS(ON), ON-RESISTANCE (OHM)
1.4
0.015
NORMALIZED
1.2 o
TA = 125 C
0.0125
1
0.01
o
TA = 25 C
0.8
0.0075
0.6 0.005
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
1000
100
VGS = 0V
VDS = 5V
100
IS, REVERSE DRAIN CURRENT (A)
80
ID, DRAIN CURRENT (A)
10
60 1
TA = 125oC
0.1
40 o
25 C
o
o
TA = 125 C -55 C
0.01
-55oC
20
0.001
o
25 C
0 0.0001
1 1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
10 3000
f = 1MHz
ID = 14A VDS = 10V
VGS = 0 V
30V
VGS, GATE-SOURCE VOLTAGE (V)
2500
8
CAPACITANCE (pF)
20V 2000
6 Ciss
1500
4
1000
Coss
2
500
Crss
0 0
0 10 20 30 40 0 10 20 30 40
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
1000 100
SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)
RθJA = 96°C/W
100 100µs 80 TA = 25°C
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
1ms
10 10ms 60
100ms
1s
DC 40
1
VGS = 10V
SINGLE PULSE 20
0.1 o
RθJA = 96 C/W
o
TA = 25 C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
100 100
I(pk), PEAK TRANSIENT CURRENT (A)
SINGLE PULSE
I(AS), AVALANCHE CURRENT (A)
RθJA = 96°C/W
80 TA = 25°C
o
TJ = 25 C
60
10
40
20
0 1
0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10
t1, TIME (sec) tAV, TIME IN AVANCHE(ms)
Figure 11. Single Pulse Maximum Peak Figure 12. Unclamped Inductive Switching
Current Capability
1
TRANSIENT THERMAL RESISTANCE
D = 0.5
RθJA(t) = r(t) * RθJA
r(t), NORMALIZED EFFECTIVE
0.2
RθJA = 96°C/W
0.1 0.1
0.05 P(pk)
0.02 t1
0.01 t2
0.01
SINGLE TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support,
(a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.