FGH40N60UFD — 600 V, 40 A Field Stop IGBT

November 2013

FGH40N60UFD
600 V, 40 A Field Stop IGBT
Features General Description
• High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A IGBTs offer the optimum performance for solar inverter, UPS,
welder, microwave oven, telecom, ESS and PFC applications
• High Input Impedance
where low conduction and switching losses are essential.
• Fast Switching
• RoHS Compliant

Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele-
com, ESS

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage  20 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current o
@ TC = 25 C 120 A
Maximum Power Dissipation @ TC = 25oC 290 W
PD
o
Maximum Power Dissipation @ TC = 100 C 116 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case - 1.45 C/W
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH40N60UFDTU FGH40N60UFD TO-247 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.6 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 4.0 5.0 6.5 V
IC = 40 A, VGE = 15 V - 1.8 2.4 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V,
- 2.0 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 2110 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 200 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 60 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 44 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 112 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 30 60 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.19 - mJ
Eoff Turn-Off Switching Loss - 0.46 - mJ
Ets Total Switching Loss - 1.65 - mJ
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 45 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 120 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 40 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 1.2 - mJ
Eoff Turn-Off Switching Loss - 0.69 - mJ
Ets Total Switching Loss - 1.89 - mJ
Qg Total Gate Charge - 120 - nC
VCE = 400 V, IC = 40 A,
Qge Gate to Emitter Charge - 14 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 58 - nC

©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 1.95 2.6
VFM Diode Forward Voltage IF = 20 A V
TC = 125oC - 1.85 -
TC = 25oC - 45 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 140 -
IF =20 A, diF/dt = 200 A/s
TC = 25oC - 75 -
Qrr Diode Reverse Recovery Charge nC
o
TC = 125 C - 375 -

©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o o
TC = 25 C TC = 125 C 15V
15V 12V 20V
20V
100 100 12V

Collector Current, IC [A]

Collector Current, IC [A]

80 80

60 60
10V 10V

40 40

20 20 VGE = 8V
VGE = 8V
0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
120 120
Common Emitter Common Emitter
VGE = 15V VCE = 20V
100 o
100 o
TC = 25 C TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 5 6 7 8 9 10 11 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5
Common Emitter 20
VGE = 15V Common Emitter
Collector-Emitter Voltage, VCE [V]

o
Collector-Emitter Voltage, VCE [V]

TC = - 40 C
3.0
80A 16

2.5
12

40A
2.0
8

IC = 20A 80A
1.5 40A
4
IC = 20A

1.0
25 50 75 100 125 0
o 4 8 12 16 20
Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 125 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A 40A
40A 80A
4 4
IC = 20A
IC = 20A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

5000 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
4000 Ciss TC = 25 C 12
200V
Capacitance [pF]

Vcc = 100V 300V

3000 9

Coss
2000 6

1000 3
Crss

0 0
0.1 1 10 30 0 50 100 150
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
400 200

100 10s
100
Collector Current, Ic [A]

Switching Time [ns]

10 100s
tr
1ms

10 ms
1 td(on)
DC
Single Nonrepetitive Common Emitter
VCC = 400V, VGE = 15V
Pulse TC = 25oC
0.1 IC = 40A
Curves must be derated
o
linearly with increase TC = 25 C
in temperature o
TC = 125 C
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG []

©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10
IC = 40A o
TC = 25 C
o o
1000 TC = 25 C TC = 125 C
Switching Time [ns]

Switching Time [ns]

o tr
TC = 125 C td(off)
100

100 td(on)
tf

10 10
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
600 10
Common Emitter Common Emitter
VGE = 15V, RG = 10 VCC = 400V, VGE = 15V
o IC = 40A
TC = 25 C
o o
TC = 125 C TC = 25 C
Switching Loss [mJ]
Switching Time [ns]

td(off) o
TC = 125 C
100 Eon
tf
Eoff
1

10 0.3
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG []

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
10 200
Common Emitter
VGE = 15V, RG = 10 100
o Eon
TC = 25 C
Collector Current, IC [A]

o
TC = 125 C
Switching Loss [mJ]

Eoff
1
10

Safe Operating Area

o
VGE = 15V, TC = 125 C
0.1 1
20 40 60 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

200
80
100
o
TJ = 125 C

Reverse Current , IR [A]

10
Forward Current, IF [A]

o
TJ = 125 C
10
o o
TJ = 25 C TJ = 75 C
1
o
TJ = 75 C

o
1 TC = 25 C 0.1
o
o TJ = 25 C
TC = 75 C
o
TC = 125 C
0.2
0.01
0 1 2 3 4 50 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

80 200A/s
50
diF/dt = 100A/s

60
200A/s
diF/dt = 100A/s 40
40

o o
TC = 25 C TC = 25 C
20 30
5 10 20 30 40 5 10 20 30 40
Forward Current, IF [A] Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
Mechanical Dimensions

Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

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©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD — 600 V, 40 A Field Stop IGBT
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Rev. I66

©2008 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGH40N60UFD Rev. C1