Data Sheet

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

General Description Features

The APT13003E series are high voltage, high speed · High Switching Speed
switching NPN Power transistors specially designed · High Collector-Emitter Voltage
for off-line switch mode power supplies with low out- · Low Cost
put power.
· Bulk and Ammo Packing TO-92 Package and
TO-126 Package
The APT13003E series are available in TO-92 and TO-
126 packages.
Applications

· Battery Chargers for Mobile Phone of BCD

Solution
· Power Supply for DVD/STB of BCD Solution

TO-92 TO-92 TO-126

(Bulk Packing) (Ammo Packing)

Figure 1. Package Types of APT13003E

Pin Configuration
Z Package U Package
TO-92 TO-126

3 Base
3 Emitter

2 Collector 2 Collector

1 Base
1 Emitter

(Top View) (Front View)

Figure 2. Pin Configurations of APT13003E

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 Data Sheet

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Ordering Information
APT13003 -

E1: Lead Free

Circuit Type
TR: Ammo
Blank: Bulk
E: APT13003E Package
Z: TO-92
U: TO-126

Package Part Number Marking ID Packing Type

APT13003EZ-E1 13003EZ-E1 Bulk
TO-92
APT13003EZTR-E1 13003EZ-E1 Ammo
TO-126 APT13003EU-E1 EU13003E Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Collector-Emitter Voltage (VBE=0) VCES 700 V

Collector-Emitter Voltage (IB=0) VCEO 465 V
Emitter-Base Voltage (IC=0) VEBO 9 V
Collector Current IC 1.5 A
Collector Peak Current (Pulse) (Note 2) ICM 3 A
Base Current IB 0.75 A
Base Peak Current (Pulse) (Note 2) IBM 1.5 A

Power Dissipation, TA=25oC For TO-92 PTOT 1.1 W

Power Dissipation, TC=25oC For TO-126 PTOT 20 W

Operating Junction Temperature TJ 150 o
C
Storage Temperature Range TSTG -65 to 150 o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%.

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Thermal Characteristics
Parameter Symbol Value Unit
For TO-92 83.3
Thermal Resistance (Junction-to-Case) RθJC oC/W
For TO-126 6.25
For TO-92 113.6
Thermal Resistance (Junction-to-Ambient) RθJA oC/W
For TO-126 96

Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Collector Cut-off Current
ICEV VCE=700V 10 μA
(VBE=-1.5V)

Collector-Emitter Sustaining
VCEO (sus) IC=100μA 465 V
Voltage (IB=0)

Collector-Emitter Saturation IC=0.5A, IB=0.1A 0.17 0.3

VCE (sat) V
Voltage (Note 3) IC=1.0A, IB=0.25A 0.29 0.4
Base-Emitter Saturation Voltage IC=0.5A, IB=0.1A 1.0
VBE (sat) V
(Note 3) IC=1.0A, IB=0.25A 1.2
IC=0.3A, VCE=2V 15
DC Current Gain (Note 3) hFE IC=0.5A, VCE=2V 13 17 30
IC=1.0A, VCE=2V 5 25
Output Capacitance Cob VCB=10V, f=0.1MHZ 16 pF
Current Gain Bandwidth Product fT VCE=10V, IC=0.1A 4 MHz
Turn-on Time with Resistive Load ton 0.3 1
IC=1A, VCC=125V, IB1=0.2A,
Storage Time with Resistive Load ts 1.8 3 μs
IB2=-0.2A, TP=25μS
Fall Time with Resistive Load tf 0.28 0.4

Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Typical Performance Characteristics

10 10
Collector Current IC (A)

Collector Current IC (A)

1

0.1
DC DC

0.1

0.01

1E-3 0.01
1 10 100 1000 1 10 100 1000

Collector-Emitter Clamp Voltage VCE (V) Collector-Emitter Clamp Voltage VCE (V)

Figure 3. Safe Operating Areas (TO-92 Package) Figure 4. Safe Operating Areas (TO-126 Package)

125 2.00

1.75 IB=400mA
100
IB=300mA
Collector Current IC (A)
Power Derating Factor (%)

1.50

1.25 IB=250mA
75
IB=200mA
1.00 IB=150mA
50
0.75 IB=100mA

0.50 IB=50mA
25
0.25

0 0.00
0 25 50 75 100 125 150 175 200 0 1 2 3 4 5
o
Case Temperature TC ( C) Collector-Emitter Voltage VCE (V)

Figure 5. Power Derating Curve Figure 6. Static Characteristics

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Typical Performance Characteristics (Continued)

40 10

Collector-Emitter Voltage VCE (V)

35 TA=125 C
o VCE=5V
VCE=1V
30
1
DC Current Gain

25
o
TA=25 C
20
o o
TJ=125 C TJ=25 C
15 0.1

10

5 hFE=5
0.01
0 0.1 1
0.01 0.1 1
Collector Current IC (A)
Collector Current IC (A)

Figure 7. DC Current Gain Figure 8. Collector-Emitter Saturation Voltage

1.1 20

VCE=2V, IC=0.5A
1.0
Base-Emitter Voltage VBE (V)

18

0.9
o 16
TJ=25 C
hFE

0.8

14
o
0.7 TJ=125 C

12
0.6

hFE=5
0.5 10
0.1 1 25 50 75 100 125 150
Collector Current IC (A) Case Temperature ( C)
o

Figure 9. Base-Emitter Saturation Voltage Figure 10. hFE vs. Case Temperature

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Mechanical Dimensions

TO-92 (Bulk Packing) Unit: mm(inch)

1.100(0.043)
1.400(0.055) 3.430(0.135)
MIN
3.300(0.130)
3.700(0.146)

0.360(0.014)
0.510(0.020)

0.000(0.000)
0.380(0.015)
Φ1.600(0.063)
MAX
4.400(0.173)
4.700(0.185)
4.300(0.169)
4.700(0.185)

0.380(0.015)
0.550(0.022)
14.100(0.555)
14.500(0.571)

1.270(0.050)
TYP 2.440(0.096)
2.640(0.104)

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Mechanical Dimensions (Continued)

TO-92 (Ammo Packing) Unit: mm(inch)

4.400(0.173)
4.700(0.185)

4.300(0.169)
4.700(0.185)
1.100(0.043) 1.270(0.050)
1.400(0.055) 3.430(0.135) Typ
MIN

0.360(0.014) 4.500(0.177)
3.300(0.130)
3.700(0.146)

5.500(0.217)
0.510(0.020)
13.000(0.512)
14.000(0.551)

0.000(0.000)
0.380(0.015)
Φ 1.600(0.063)
MAX

0.380(0.015)
0.550(0.022)

2.540(0.100)
Typ

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E

Mechanical Dimensions (Continued)

TO-126 Unit: mm(inch)

2.500(0.098

4.100(0.161)
3.900(0.154)
7.400(0.291) 2.900(0.114)
7.800(0.307) 1.100(0.043)

0.000(0.000)
0.300(0.012)
1.500(0.059)
10.600(0.417)
11.000(0.433)

3.000(0.118)
3.200(0.126)

1.170(0.046)
1.370(0.054)

0.660(0.026)
2.100(0.083)
2.300(0.091)

0.860(0.034)
15.300(0.602)
15.700(0.618)

2.290(0.090)TYP 0.450(0.018)
0.600(0.024)
4.480(0.176)
4.680(0.184)

May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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 BCD Semiconductor Manufacturing Limited

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