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or VDD
• Low Output Impedance: 8Ω General Description
Noninverting Inverting
Output Output
(TC1427) (TC1426)
Input
GND
Pin No.
(8-Pin PDIP, Symbol Description
SOIC)
1 NC No connection.
2 IN A Control input A, TTL/CMOS compatible logic input.
3 GND Ground.
4 IN B Control input B, TTL/CMOS compatible logic input.
5 OUT B Output B, CMOS totem-pole output.
6 VDD Supply input, 4.5V to 16V.
7 OUT A Output A, CMOS totem-pole output.
8 NC No connection.
1µF 1µF
0.1µF MLC WIMA 0.1µF MLC
MKS-2 MKS-2
Input 1 Output
Input 1 Output
CL = 1000pF
CL = 1000pF
2
2
TC1427
TC1426 (1/2 TC1428)
(1/2 TC1428)
+5V +5V
90% 90%
Input Input
10% 10%
0V
0V
tD1 tD2
VDD
tF tR 90% 90%
tD1 tD2
VDD tR tF
90% 90% Output
Output 0V 10% 10%
10% 10%
0V
Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage Delay Time vs. Supply Voltage
550 330 80
TA = +25°C TA = +25°C
CL = 1000pF
TA = +25°C
440 264 70
TIME (nsec)
TIME (nsec)
TIME (nsec)
330 10,000pF 198 10,000pF 60
220 132 50
4700pF tD1
4700pF
110 66 40
2200pF 2200pF
tD2
0 0 30
5 7 9 11 13 15 5 7 9 11 13 15 5 7 9 11 13 15
VDD (V) VDD (V) VDD (V)
Rise and Fall Times vs. Temperature Delay Time vs. Temperature Supply Current vs. Capacitive Load
40 60 30
CL = 1000pF CL = 1000pF CL = 1000pF
VDD = +15V tRISE VDD = +15V VDD = +15V 500kHz
32 54
SUPPLY CURRENT (mA)
24 TA = +25°C
tD2
TIME (nsec)
TIME (nsec)
24 tFALL 48 18
200kHz
16 42 tD1 12
20kHz
8 36 6
0 0 0
25 45 65 85 105 125 25 45 65 85 105 125 100 520 940 1360 1780 2200
TEMPERATURE (°C) TEMPERATURE (°C) CAPACITIVE LOAD (pF)
Rise Time vs. Capacitive Load Fall Time vs. Capacitive Load Supply Current vs. Frequency
1000 1000 100
CL = 1000pF VDD = 15V
TA = +25°C TA = +25°C TA = +25°C
SUPPLY CURRENT (mA)
80 VDD = 10V
TIME (nsec)
TIME (nsec)
5 VDD 60
5 VDD
100 100
10 VDD 10 VDD 40
15 VDD 15VDD 20
VDD = 5V
10 10 0
100 1000 10,000 100 1000 10,000 10 100 1000 10,000
CAPACITIVE LOAD (pF) CAPACITIVE LOAD (pF) FREQUENCY (kHz)
50mA
34
ROUT (Ω )
11
R OUT (Ω)
A (sec)
10-9
9 26
50mA
10mA
7 18
10mA
5 10
10-10
5 7 9 11 13 15 5 7 9 11 13 15 4 6 8 10 12 14 16 18
VDD (V) VDD (V) VDD (V)
15
15
10
10
5
5
0
0
0 50 100 150 200 300 400 1 2 3 4 5 6
SUPPLY CURRENT (µA) SUPPLY CURRENT (mA)
1400
8 Pin DIP
MAX. POWER (mW)
1200
1000
800
8 Pin SOIC
600
400
200
0
0 10 20 30 40 50 60 70 80 90 100 110 120
AMBIENT TEMPERATURE (°C)
.260 (6.60)
.240 (6.10)
.200 (5.08)
.140 (3.56) .040 (1.02)
.020 (0.51) .015 (0.38) 3° MIN.
.150 (3.81) .008 (0.20)
.115 (2.92)
.400 (10.16)
.310 (7.87)
.110 (2.79) .022 (0.56)
.090 (2.29) .015 (0.38)
8-Pin SOIC
PIN 1
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35) .010 (0.25)
8° MAX..
.007 (0.18)
.020 (0.51) .010 (0.25)
.013 (0.33) .004 (0.10) .050 (1.27)
.016 (0.40)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
03/01/02
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