process for the production of devices in the submicron to millimeter range
Two types of microfabrication 1. micromachining 2. soft fabrication Materials commonly used for micromachining and what micromachining is similar to? silicon and other ceramics; similar to integrated circuit fabrication Soft fabrication techniques -molding -embossing -stamping -casting -thick-film application -SAMs -array patterning using polymers and biological substances MEMS devices are made from the same materials used for _____ microelectronics What materials are MEMS devices made from? -single crystal silicon wafers -deposited layers of polycrystalline silicon (polysilicon) for resistive elements -gold, aluminum, copper, and titanium for conductors -silicon oxide for insulation and as a sacrificial layer (to allow release of moving parts -silicon nitride and titanium nitride for electrical insulation and passivation What are advantages of using silicon materials? they have high strength at small scales, which allows higher strain levels and less susceptibility to damage and fractur What are the 4 soft fabrication materials? -polymers -hydrogels -electroactive polymers -biological materials Soft fabrication materials: polymers surface modification for improved functionality Soft fabrication materials: hydrogels environmentally induced changes in shape, size, and other attributes Soft fabrication materials: electroactive polymers electrically induced changes in shape, size, and other attributes Soft fabrication materials: biological materials DNA fragments, biotin labeled albumin, and streptavidin coated polystyrene beads MEMS devices are largely made of what? Silicon MEMS devices use what fabrication techniques? the ones used in integrated circuit manufacturing What is used as device substrates and how in microfabrication? Silicon wafers of varied diameters and crystal orientation are cut from long silicon boules and serve as device substrates What techniques are silicon wafers subjected to? subjected to the application of a variety of thin films by thermal, chemical, and vapor deposition, epitaxial, or sputtering techniques, which inlude thermal silicon oxide, dielectric materials such as silicon dioxide and silicon nitride, polycrystalline silicon, and conductive metal films What is photolithography used for, when, and for what? for pattern transfer, using masks and resists; it interweaves other process steps of deposition and etching (micromachining) to achieve 3D structures Which element is the most used semiconductor in electronics and bioMEMS? Electronic grade silicon (EGS) Steps to fabricate EGS (3) 1. quartzite is placed in a furnace with carbon-releasing materials, reacts with carbon and forms metalluric-grade silicon (MGS) 2. MGS is then treated with hydrogen chloride to form trichlorosilane 3. fractional distillation reduction with hydrogen produces EGS
all of these processes need heat
Czhochralski process -method of crystal growth used to obtain single crystals of semiconductors, metals, salts, and synthetic gemstones -can manufacture the silicon boule, which is an elongated growth of a single silicon crystal -a silicon crystal is gradually pulled upward by a rod connected to a rotating seed crystal that rests initially upon the surface of stirred molten silicon in a graphite crucible; entire unit is housed in a silica enclosure with a controlled inert atmosphere; rotating seed-bearing rod is pulled back a few millimeters a minute, allowing the crystal boule to grow; the boule is then cut into wafers of defined diameters and thicknesses Crystalline silicon structure forms a covalently bonded structure and coordinates itself tetrahedrally Silicon and germanium crystallize as two interpenetrating FCC sublattices Silicon is an element that exists in three forms: crystalline, polycrystalline (polysilicon), and amorphous (glass) Miller indices serve to identify and label orientations in the silicon wafers cut from the original boule Steps in photolithography; surface micromachining steps 1. a patterned litographic mask is made and used to expose a photoresist and silicon dioxide (sacrificial layer) coated substrate such as silicon or glass 2. light polymerizes the photoresist protecting those exposed from being etched away 3. a structural material like polycrystalline silicon is deposited 4. more lithography patterns the structural material 5. the structural meterial is then etched 6. the sacrificial layer is etched away, leaving the surface detail Mask creation mask serves as a stencil to generate a pattern on a resist-coated surface; both glass and quartz plates can be used since they are transparent to UV light and may be placed in direct contact or proximity contact above the surface wafer cleaning occurs in a clean room; may include RCA cleaning protocols In what ways can thermal oxidation be accomplished? dry oxidation, wet oxidation, and pyrogenic oxidation SiO2 characteristics -silicon atom surrounded tetrahedrally by four oxygen atoms -structure may be crystalline (quartz) or amorphouse (thermal deposition Characteristics of dry oxidation -produces a better oxide with higher density than steam oxidation -slower -use sio2 produced as an insulating layer that will permanently stay -occurs at 900-1500 degrees Celsius What can the SiO2 layer be used as? as an insulating layer, a mask, diffusion barrier, and as sacrificial material Characteristics of wet/steam oxidation -faster than dry oxidation -lower density -used sio2 that will serve as sacrificial layer that will be etched away Thermal silicon oxide is.... amorphous What is a resist? once the thermo silicon oxide layer is created, the wafer is ready for resist application; a resist is a solution of photosensitive polymer, or photoresist Spin-casting process photoresist is dispensed onto the wafer and spun at high speed, creating a uniform layer; this process leads to smooth films Positive resist exposed areas to UV is washed away; positive protects Negative resist unexposed areas to UV are washed away Types of positive resist -poly(methyl methacrylate) (PMMA) -two-part system, diazoquinone ester plus phenolic novolak resin (DQN) Types of negative resist -SU-8 -bis(aryl)azide rubber -Kodak KTFR Critical dimension the smallest feature size to be produced; smallest scale comfortability for applying this technique Resolution smallest line width to be consistently patterned; pixels, the smallest the better resolution Alignment process crucial for forming multilayer structures for fabrication of miniaturized devices; based on fiducial marks on the mask (crosshairs or optical vernier) UV Exposure occurs at... 350-500 nm After exposure... wafer is developed and the underlying oxide is etched away; resists themselves are either stripped away at some point or may become part of the device etching methods: subtractive processes: dry etching (plasma) glow discharge methods (diode setups) --plasma etching (PE) --reactive ion etching (RIE) --physical sputtering (PS)
ion beam methods (triode setups)
--ion beam milling (IBM) --reactive ion beam etching (RIBE) --chemical assisted ion beam etching (CAIBE)
deep reactive ion etching (DRIE)
etching methods: subtractive processes: wet etching (chemical liquids) N/A etching profile: isotropic etching poor directionality etching profile: anisotropic etching good directionality; produces more vertical walls plasma etching (PE) comparison -occurs at relatively lower energy and higher pressure (less vacuum) -is isotropic -selective -less prone to cause damage reactive ion etching (RIE) comparison -more middle ground in terms of energy and pressure -better directionality physical sputtering (PS) and ion beam milling (IBM) comparison -rely on physical momentum transfer from higher excitation energies and very low pressures -result in poor selectivity -anisotropic etching -increased radiation damage plasma etching (PE) -plasma bombards a surface -impinging ions erode or sputter-etch the surface by momentum transfer plasma etching (PE) procedure 1. generation of etchant species 2. diffusion to surface 3. adsorption 4. reaction 5. desorption 6. diffusion into bulk gas reactive ion etching (RIE) can be accomplished with radio frequency (RF) generated plasma; ion etching sputter occurs; substrate is held on the anode for deposition; high energy ions from the plasma attack wafer surface and react with it After etching... resist is stripped and wafer inspected in a profilometer physical sputtering (PS) bombarding a surface with inert ions (argon) physical sputtering (<3eV) particles are simply reflected or absorbed physical sputtering (4-10eV) some surface sputtering occurs physical sputtering (10-50,000eV) momentum transfer causes bond breakage and ballistic material ejection across the reactor to the collecting surface; a low pressure and long mean free path are necessary to prevent the material from redepositing implantation (doping) occurs at... 10,000 - 20,000 ev sputter yield the number of atoms removed from the surface per incident ion sputter yield depends on: -incident ion energy (max yield 5-50keV) -mass of ion -mass of substrate atom to be etched away -crystallinity and crystal orientation of the substrate -temperature of the substrate -partial pressure of oxygen in the residual gas ion beam milling (IBM) a hot filament serves as an electron source in an inert gas environment such as argon; ions are extracted from the upper chamber by the grid, formed into a beam, accelerated, and fired into the lower chamber, where they hit the target reactive ion-beam etching (RIBE) and chemical assisted ion-beam etching (CAIBE) unlike IBM, ion-surface interactions promote etching in RIBE and CAIBE reactive ion-beam etching (RIBE) reactive ions etch the surface directly; reactive ions come from ion source itself chemically assisted ion-beam etching (CAIBE) inert ion bombardment induces a reaction by making the surface more reactive for neutral plasma species; a reactive gas such as Cl2 is flowed over the substrate; achieves highly anisotropic etch profiles with smooth vertical sidewalls profilometry measuring of surface features, including depth and width of etched structures dicing process by which dye are separated from wafer of semiconductor following the processing of the wafer; can make silicon chips to use in computers wire bonding method of making interconnections between an integrated circuit or other semiconductor device and its packaging during semiconductor device fabrication surface micromachining concepts discussed: -mask creation -silicon wafer preparation -thin-films deposition such as SiO2 -resist (positive, negative) application -UV exposure and development -etching methods (substractive processes) -resist stripping -inspection with profilometer -dicing and wire bonding