® & MOTOROLA Semiconductors BOo29 |OPTOELECTRONICS General Information Selector Guide and Cross-Reference Data Sheets Applications Information FIBER OPTICS General Information Selector Guide Data Sheets Applications InformationMOTOROLA OPTOELECTRONIC DEVICE DATA Prepared by Technical Information Center Motorola has concentrated on infrared, GaAs emitters, silicon detectors, high-technology opto coupler/isolators and an innovative approach to Fiber Optic components, modules and links. This Optoelectronic Data Book contains up-to-date specifications on the complete product line. The catalog is divided into the two major sections of Opto and Fiber Optics. The Table of Contents and Alphanumeric Index cover all products. Each section has its own General Information, Selector Guide, and Data Sheets. All devices listed are available direct from Motorola and from Motorola's Authorized Distributors. Applications assistance and information on pricing and delivery are available from the nearest Motorola sales office. Motorola reserves the right to make changes to any product herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its present patent rights nor the rights of others. ©MOTOROLA INC., 1980 Printed in Switzerland “All Rights Reserved"Annular, Straight Shooter and Unibloc are trademarks of Motorola Inc.CONTENTS Page ALPHANUMERIC INDEX ...... iit OPTOELECTRONICS CHAPTER 1 — GENERAL INFORMATION ...... ee wie The Motorola Spectrum of Optoelectronics . Optical Isolators /Couplers Optoelectronic Definitions CHAPTER 2 — SELECTOR GUIDE AND CROSS-REFERENCE - 24 Opto Couplers/Isolators 5 ihagio OW won aah eget 22 ‘Transistor Output Writes ios 22 Darlington Output... 3 22 ‘riae Driver Output 23 Digital C Output hgh 23 Linear Amplifier Output A 2 psa SCR Output bee 24 SCR Cross-Reference ee 24 Infrared-Emitting Diodes : - 26 Silicon Photo Detectors 25 Photodiodes : i 25 Phototransistors 26 Photodarlingtons 26 Photo Triae Drivers i 26 Cross-Reference 27 CHAPTER 3 — DATA SHEETS . a1 Data Sheet Listing (See Page 3-2) CHAPTER 4 — APPLICATIONS INFORMATION a4 ‘AN-440 — Theory and Characteristics of Phototransistors. 42 AN-508 — Applications of Phototransistors in Electro-Optic Systems 413 AN-571A — Isolation Techniques Using Optical Couplers 4.27 [AN-780A — Applications of the MOC301 1 Triac Driver 4-35 FIBER OPTICS CHAPTER 5 — GENERALINFORMATION .......2..0.00..000c0ceeccsctseeeseesseeseeees Bel Fiber Optics ......-. Slara ues enee 6-2 Basic Concepts of Fiber Optics and Fiber Optic Communications .... 63 Basic Fiber Optic Terminology 5 sssexiaece ay BEES CHAPTER 6 — SELECTOR GUIDE . Infrared Emitters Photo Detectors Transmitters Receivers Links Accessories 64CONTENTS (continued) Page CHAPTER 7 — DATA SHEETS ; ma Data Sheet Listing (See Page 7-2) CHAPTER 8 — APPLICATIONS INFORMATION cal ‘AN-794 — A 20-Mbaud Full Duplex Fiber Optic Data Link Using Fiber Optic Active Components ceased U2 [AN-804, — Aplications of Frruled Components to Fiber Opti System 8-30 MFOLO2 — Theory of Operation ' 8-38 Fiber Optic Circuit Ideas 20-Megabaud Data Link 10-Megabaud Data Link 2.0-Megabaud Data Link 1.0-Megabit System 100-Kilobit Receiver 1/10/100 Kitobit Receiver + Darlington Receiver Phototransistor Receiver {A Microcomputer Data Link Using Fiber OpticsALPHANUMERIC INDEX Device Page Device Page Device Page 2N5777 3:3 mcr274 3-90 ‘MRD150 3-63 2N5778 3.3 mcr275, 3-90 MRD160 3-66 2N5779 33 mcr277 3-90 MRD300 3-69 2N5780 33 MFOD100 73 MRD310 3-69 4n25 35 MFOD102F 78 MRD360 3-73 4N25 35 MFOD104F 77 MRD370 3-73 4n26 35 MFOD200 79 MRD450 3.77 4Nn27 35 MFoD202F 7Ay MRDSOO 3-80 4Nn28 35 ‘MFOD300 713 M0510 3-80 4Nn29 3.9 MFoD302F 715 MR03010 3-83 4n29 3.9 MFoD402F 747 MR03011 3-83 4N30 39 MFOD404F 721 MR03050 3-86 4N31 39 MFOD405F 7-25 MR03051 3-86 432 39 MFOE100 7-29 MR03054 3-86 AN32A 39 MFOE102F 731 MRD3055 3-86 N33 39 MFOE103F 7-33 MRD3056 3-86 N35 3.13 MFOE106F 7:35 Tan 3-90 N36 3.13 MFOE200 7.37 THa12 3-90 4n37 3.413 MFOLOt 7:38 THLA13 3-90 N38 3.47 MFOLOZ 741 mana 3-90 an38a 3.47 MLED8O 3.23 TWAS 3-90 HITAI 3.90 MLED80 3.23 THLA16 3:90 HI1Az 3-80 MLED92 3.25 TWLA7 3.90 HI1A3 3-90 MLED93, 3.27 TILA9 3.90 HitAa 3-90 MLED94 3.27 TWLI24 3-80 HAS 3-90 MLED95 3.27 TIL125 3-90 H11a520 3-90 ‘MLED300 3.29 TIL126 3-90 H11A550 3.90 MLED930, 3.31 T1127 3-90 H11A5100 3.90 moct19 3.33 T1128 3-90 Hi1Bt 3.90 ‘Moct005 3.37 TIL153 3.90 Hi182 3-90 ‘Moct006 3.37 THL1s4 3-90 H11B3 3-90 MOC3000 3.41 TILI55 3-90 118255 3-80 ‘Moc3001 3-41 TIL156 3-90 wu 3-90 Moc3002 3-41 TIL157 3-80 ia 3-90 Moc3003 3-41 ws. 3-90 ‘Moc3009 3.44 wa 3-90 moc3010 3-44 Lian 3.21 Mocs011 3-44 Liana 3.21 moc3020 3-48 u14H3, 3.21 moc3021 3-48 Luana 21 M0c3030 3-50 McA230 3-90 Moc3031 3-50 McAz31 3-90 MOC5OO5, 3-53 MCA255 3-90 MOC5OO6: 3-53 Merz 3-90 MocsO10 3-55 McT2E 3-90 Moc8020 357 mcT26 3-90 Moceo2t 3.57 mcra7t 3-90 Moc8030 3.59 mcr272 3-90 MocE050 3.59 mcr273 3-90 MRO14B, 33OPTOELECTRONICS General Information Motorola Optoelectronic products include infrared-emitting diodes, silicon photo detectors and opto-couplers/isolators, Motorola is the leader in high technology opto-couplers. For control of 110 and 220 Vac lines, the triac drivers (MOC3010, MOC3020, MOC3030) are unequaled. All Motorola opto-couplers have a minimum isolation voltage of 7500 Vac peak, the highest available. The broad opto-coupler line includes nearly all the transistor, Darlington, SCR, and Triac output devices now available in the industry. Each device is presented in the easy-to-use Selector Guide and is included in a detailed data sheet in a succeeding section.The Motorola Spectrum of OPTOELECTRONICS INFRARED.LIGHT-EMITTING DIODES The infaredsightemitting diode emits radiation inthe ‘ear inaredrepion when forward bias current (If) flows ‘gh the PN junction. The light output power (Po) is 2 function of the drive current (If) and is measured ‘in milwatts Infrareddighemiting diodes are used together with phorosensons Photodiodes Raiation falling at the PN junction wil generate Hole flectron pairs which cause the carters 10 move, thus causing a cuerent low (IL). The power density of the “adiationH (measured in mW/om) determines the eusent Now. IL. At zero radiation, small leakage current, called dark curtent (Up) wil remain Ficune 3 Ve Ln 4 PHOTOSENSORS Silicon phowsensors respond to the entie vse radiation cange 28 well a5 0 the near infrared radistion ‘ange. The radiation sesponse of 2 photosensor is 2 funetion of the materat and the diffusion depth of the Uightseostive PN junction, All silcon photosensors (diodes, transistors. daringons, ties) show dhe same basic radon frequency response which peaks inthe reat iniared radon range, Therefore, the sensitivity range of Motorola silicon sensors is ideally sited 10 Motovolsinfrared-emiting diodes, Phototransistors The phototransstor is a light radiation controlled transistor, The collector base junction is enlarged and works us a reversed bissed photodiode contoling the transistor. The collector current, I. depends on the radiation density (H) and the de current gin of the Uuansstor. Underdark condition, the transistor is switched off-the emainingleakage current, Legg, called collector ask curtentPhotodaringtons The photodalinglon works on the same principle 25 2 phototransstor. The collector base junetion ofthe dives transistor radiation ‘and. contols the diver transitor. The driver transistor controls the fo: lowing transistor, The dalington configuration yields 1 high cursent gain which results in a photodetector ‘with vexy high light sensitivity Phototrics The gate of the phototdae i adition sensitive and Triggers the tae at 3 certain specified radiation density (4) At dack condition, the tae i aot triggered. The remaining leakage cutent s called peak blocking current Cipgat). The device is bilateral and designed to switch se sigs, ve “ " “ Optical Isolators/Couplers ISOLATORS [An optoeletioni isolator contains both an IRED and a photodetsctor in the same package, arranged so that energy radised From the IRED i effirently coupled to the detector through a clear, solating dielectic, An ‘opaque materi! surounds the dielectric and provides ambient light protection ‘Since there is no electrical connection between input and output. and since glum arsenide emitters and sicon Aetectors cannot reverse thei cles signa is able to pass ‘hough the isolator in one direction only. To a degree Aetermined by the package input-output capacitance and fisletcic characteristics, the device unvesponsive to {common mode input signals and provides input eieutry protection from the output circuit envconment. Ground Toop prevention, de level shifting, and logic contol of| high voltage power ciscutry are therefore typical areas where iaoators ave very useful The measure of an isolator’ ability to efficiently pass 4 desced signal is most commonly referred to as Cutent ‘Transfer Ratio (CTR), Its dependent upon the radiative ficiency of the IRED, the spucing between the IRED fnd the detector, the ateu and sensitivity of the detector, Sand the amplifying gain of the detector, tis subject to the nonlineasties (Curent, voltage, temperature) of both ‘chips, causing a rather complex tansferfunetion Which should Be evalusted closely when used at non- specified conditions. “The ability of an isolator t0 provide standoff pro: tection i usually expressed as an Iolation Surge Voltage and isessentaly a measure of the inteprty of the package tnd the diletse steength ofthe isulating materi 13 FIGURE 7 ~ BASIC OFTO ISOLATOR COUPLER! 5 aw ISOLATION VOLTAGE ‘The primary function of an yopteclectronic iaolator | (@ provide electrical separation between input and. output, expecially inthe presence of hgh voltages The amount of sree that an folator can safely withstand and the stability of thi protection varies cowsidecably With package construction techniques used Figure 8 shows an olde slation technique, where the light (ranemission medium is a small amount of a clear. sliconesubber type of material. Surrounding itis usvally {back epoxy or phenolic compound. It has been found that the weakest point in tht approach i the interface between the “liphtpipe™ and the overmold. It urea: tively short path between lea frames long this interface, fand the two materials are dissimilar enough that the integrity of the interface fe usally poor. This technique inivally gives marginal stndoft protection and stability— = | | \ \ under voltae stress very poor Figure 9 shows. Motorola's improved. constuction technique, The clear dielectie wed here isa tansfer: molded epoxy that encompasses laige volume of the Ineroe of the puckage. The overmold is tansfer-molded fpaque epoxy. The result ie 4 much longer interface ypically ten times longer) between two very similar, lectnaly stable compounds. Minimum specified olson voltage capability # 7500 volts ae peak on all Motorola isolators, and typical units provide in excess of 12000 volts ae’ peak protection on 2 reldble, repeatable bast (in 9 clean and low humidity envioament), External ambient conditions (humidity, cleanliness, ete) end 0 be the limiting factors when ‘sing Motorola isolators. Representative test data at typical applied voltages are shown below “est [Woof Unis] Appi Vorap | Faure @ 1000 Fn Isolation voliage has been specified in terms of both {de and ae conditions, sometimes with no aasociated test Alration. In general, ac conditions ate more severe than de. Any imperfections or discontinuity in the isolating dielectric tend to have lower dielectric constant ‘hun the surrounding areas and asume a disproportionate Stare ofthe roal ac applied fed nthe same manner that Me smallest capacitance in a series sting assures the highest voliage drop under ac conditions. Microscopic ruptures can occur at these points, causing localized degradation and propagation of the weakened teas unt Inngescale puncture occurs, De fels tend to distribute more linearly. Addinvonally, 2¢ fields are moze effective in causing. mobile smporities to align themselves and produce leakage pth, Continuous ratings ate therefore difficult to guarantee relly as the result of individual unit testing or sorting lustead. suge isolation voltage eating should he specifies V4 with an asoeated test duration, while continuous ratings rust be the result of a wellcontolled, well characterized assembly technique and realistic generic dita. Since ae conditions are usualy the most severe, it has Become common to give them the mos attention UNDERWRITERS’ LABORATORIES RECOGNIZED Most Motorola solators are avilable unde the Under writers’ Laboratories Component Recognition Program It shouldbe noted that applicable Motorolysolators are recognized for use in applications up to 240 Ve. Under the ULL criteria, these devices must have passed lation voltage tests at approximately SOD0 volts ae peak for fone second. In addition, Motorols tests every souper 0 7500 V ac peak for 5 seconds, ‘COUPLER PROCESS FLOW/QUALITY CHECK POINTS Every optocoupler manufactured by Motorola under: goes extensive improcess checks for quality. After each process step (For example, die bord, encapsulation. lectial tet. etc) the product is randomly sampled IF the sample does not pass high-quality standards. the product flow is halted and corrective action 6 taken In this manner, quality is bul in st Motoroe, FIGURE 10 ~ Coupler Paces Flow/Qutty Check PointscTR dv/dt 'eeo scR Current Transfer Ratio — The ratio of output current toinputcurrent, ata speci fied bias, of an opto coupler. Commutating dv/dt — A measure of the ability of a triac to block a rapidly rising voltage immediately after conduction of the opposite polarity Coupled dv/ at — A measure of the ability cof an opto thyristor coupler toblack when the coupler is subjected to rapidly changing isolation voltage Luminous Flux Density (Iiluminance llumens/‘t2 = ft, candles) — The radia- tion fluxdensity of wavelength within the band of visible light, Radiation Flux Density |Irradiance) {mW/em2] — The total incident radiation energy measured in power per unit area Collector Dark Current — The maximum current through the collector terminal of the device measured under dark condi ios, (H~ 0), with a stated collector voltage, load resistance, and ambient temperature. (Base open} Dark Current — The maximum reverse leakage current through the device mea sured under dark conditions, (H™ 0), with a stated reverse voltage, load resistance, and ambient temperature. Input Trigger Current — Emitter current necessary to trigger the coupled thyristor. Collector Light Current — The device collector current measured under defined conditions of irradiance, collector voltage, load resistance, and ambient temper ature Series Resistance — The maximum dynamic series resistance measured at stated forward current and ambient tem: perature. Silicon Controlled Rectifier — A reverse blocking thyristor which can block or conduct in forward bias, conduction between the anode and cathode being initiated by forward bias of the gate cathode junction. Photo Current Fall Time — The response time for the photo-induced current to fall from the 90% point to the 10% point after removal of the GaAs (gallium-arsenide) source pulse under stated conditions of collector voltage, load resistance and ambient temperature Photo Current Rise Time — The response time for the photo-induced currenttorise 15 Triac Teta VaryR Mericeo MBriceo MBRIECO Veeo Veeo Veco Ve viso VR Aslurm) OPTOELECTRONIC DEFINITIONS, CHARACTERISTICS, AND RATINGS from the 10% point tothe 80% point when pulsed with the stated GaAs (gallium: arsenide} source under stated conditions of collector voltage, load resistance, and ambient temperature. ‘A thyristor which can block or conduct in either polarity. Conduction is initiated by forward bias of a gate-MTI junction Storage Temperature Reverse Breakdown Voltage — The minimum de reverse breakdown voltage ‘at stated diode current and ambient tem. perature Collector-Base Breakdown Voltage — The minimum de breakdown voltage, col: lector to base, at stated collector current and ambient temperature. (Emitter open andH= 0) Collector-Emitter Breakdown Voltage — The minimum de breakdown voltage, collector to emitter, at stated collector current and ambient temperature. (Base ‘open and H= 0) Emitter-Collector Breakdown Voltage — The minimum de breakdown voltage, emitter to collector, at stated emitter current and ambient temperature, (Base ‘open and H= 0) Collector-Base Voltage — The maximum allowable value of the collector-base voltage which can be applied tothe device at the rated temperature. (Base open} Collector-Emitter Voltage — The maxi- ‘mum allowable value of collector-emitter voltage which can be applied tothe device at the rated temperature. (Base open} Emitter-Collector Voltage — The maxi mum allowable value of emitter-collector voltage which can be applied tothe device at the rated temperature. (Base open) Forward Voltage — The maximum for ward voltage drop across the diode at stated diode current and ambient tem: perature Isolation Surge Voltage — The dielectric withstanding voltage capability of an optocoupler under defined conditions and time. Reverse Voltage ~ The maximum allow: able value of dereverse voltage which can bbe applied to the device at the rated tem: perature Wavelength of maximum sensitivity in micrometers.16OPTOELECTRONICS Selector Guide and Cross-Reference s N ZnOPTICAL Transistor Output Isolation vottage 1 7500 (Mia) COUPLERS/ISOLATORS ice ‘Mat would otherwise be incompatible. Motorola wets so x ‘of 7500 Vac peak. Ae 3 i “Motorola offers a wide array of standard devices with 4 i 2 ‘are UL Recognized with File Number £54015. must = 2 hae ecto teltetaasies ee | e | & Soienemmwa cee ee | 2 | 2 Ecce sec sate iS = | 38 Darlington Output t WT cnvce | “tanner” | Mageso oan ana Cop tea fe | B | mon asire i 3 22OPTICAL COUPLERS/ISOLATORS (continued) Bitersmteh dened for appcatons eau Sng outed tae tgperng soem ae ertace iomiogato a0 V Pus ine wotage Tree Triac Driver Output Isolation Voltage is 7500 V (min) on all devices. See notes. {LED Trigger Current Device Type 7 ‘The Digtl Looe Couplers galun-arsenise Grated detector Designed for applications faquring sects! oiton, fast response ene ‘Sago caroaty en rts a! conto pore auaplen tos. and ‘aon ota corte tthe RED input erie {Owvotaye win we RED ot reoupetyotage Digital IC Output Isolation Vottage is 7500 V (min) (on all devices. See notes. Datos Vote QO) tontot Device Type Neo sev | ne ‘Vous wax | “ue sn omni um rae teens mearencrcet Se eae 4 : T° Linear Amplifier Output Isolation Voltage is 7500 V (min) ‘See notes. ‘Sings Ended @vec~12¥, |@ Veo» 12, Device Type tm mvima | tig Lm te St 23OPTICAL COUPLERS/ISOLATORS (continued) SCR Couplers ‘The SCR Output Coupler is #galium-arseniae IREDoptealycoupledtoaphotaserstvesticon SCR Output Isolation Voltage is 7500 V (min) on alaevices. ‘contredrecier (SCA) Hiedesigned or app TED Tigger Curent [eax Blocking arose + Cf 1] © scn-care camese 2 Ch I} 5 scr Anode neq 4 scncainade ‘These SCR Couplers ae interchangeable with many devices avauable i the industey. evce Manutecurer Equivalent wren ce vwocso0s nie ce oca003 mites ce oc300: ries ce voc000 mes? a moctoo2" mes24oo a ocx000" coruzo ‘tron mocacea coPiaos pon Moco: coriaoz non moca0ce sesiict Spectones mocaoea sesiics Spectones ‘moc2002 sesio4 Spectones sMoca001 sesiiee Spectonet ocxo00 | 24INFRARED-EMITTING DIODES Infrared (900 em) gatium-arsenide emitters are avaiable from Motorola for use in light modulators, shaft or postion encoders, punched card and tape readers. optical switching and logic ewcuits They are spectrally matched for Use with siicon detectors Peak Emission Wavelength = 900 am (Typ) Forward Voltage @ 50 mA = 1.2 (Typ) Man Anle— Angle tichiRensson Pecks Device Type ‘hog Power Output a | | SE A aa} ear A warm 9 | HE SILICON PHOTO DETECTORS A variety of slicon photo detectors are availabe fora wide range of ight detecting “applications. Devices are avaliable in packages offering choices of viewing angie and size in either low-cost, economical plastic cates or rugged, hermetic, metal ‘cans. Advantages over photo tubes ae high Sensitwity, ood temperature Photodiodes Photodiodes are used where high speed is required (1.0 ns). SS eg = me |e nate |e | he wm | idSILICON PHOTO DETECTORS (continued) Phototransistors Phototransstors are used where moderate sensitivity and medium speed (2.0 us) are required ——] warren anczo | aoa Saw me wit | the wal | HE | dhe we ..... el] 3 S 3 3 2 @ jue | os | 2] S | m |] s A nv, @ | BH) ELE) ELE] SE Photodarlingtons Pholodaringtons are usee where maximum sensitity is required with typeal rise and fll times of $0 ys. x Tpreana—] Wanges | pat tomer rae wy | eon |e | gh etm emt | ae | ak Pom “TELELELEL ELE Photo Triac Drivers Photo trae drivers contain a ight sensitive IC acting asa trigger device for direct interface with atic. rier On-State | Of-State Output oon a vee | Semin | gut canon | Tarn votoye | Seng wor | yl | Sma | "Vota poor | Su | he wen Lead weCROSS-REFERENCE The following i @ erssreference of all known optoelectronic devices at ‘the ime of printing, This lit is meant to serve ata substittion guide for existing compertve devies to Motorola's optoeleetrone product line ‘Motorola's nearest equivalent devices are selected on the basis of general similerity of electrial characterises. Interchangeability in patcuar applica tions is not guaranteed. Before using a substitute, please compare the detailed specifications of the substitute device tothe data sheet ofthe orginal device ‘mn the exent the dence we recommend does not exacts meet Your needs, we encourage you 10 bok for another device from the same line source which wil have similar charactertice, oF comet your neorest dstmbutor or Motorola sales office for further information. cove A= Direct Replacement B= Minor Electicl Difference {€ =Minor Mechanical Difference De Significant Electrial Difference EE = Significant Mechanical Difference 27CROSS-REFERENCE ‘anion ‘Serene 10.18 Linea Protrear Twn03080 © r109 sane To.t8 taniad Poros fanb20%0 € seen | mip To LenwaPhotesorgton fino a era? To:18 ened ororreator tino200 a fsa Touts tamed Potornestar fino208s a rxse Seer O18 Lene Photoirenotor wn0200 a boven Sunes ‘Tore Lanea otonarenar firo2080 a tecti08 encase To.tB Land 1 LED witeosn | a extt0e ene Forte tenes i LED musoa0 ® cua isos fn DIP Couper, rarstor Out nas ° cis Sorex on DIF. Counter, TrrenorOutat ‘nae a cine | Touts Len Povornestor tinoar9 a euRat80 TO.18 Lene Potorarentor wnon00 * cunaico 70.18 Lane Potoranestor tino2e0 a articd 70.18 Lame Potedrington tinea a ceunota0 10.18 Lees Potodrinaton synoneo a exra000 PCL Lene Potornstor tinea a eraoco PILL Leven Potereestor tuno003 . 28(CROSS-REFERENCE (continued) Favenia Gn OF, Grape, Transtor Ostout az a Fe08%0,8,¢,0 | Farenid {6m OI, Couper, Transtar Ostout far 5 0820, Fever {in OI, Cowper, Yranstor Ostout 26 a Feoaan, Fovehia {Pin OI, Cowper, Framator Ostout ans a Feo820,¢.0 | Farenid Pm OP Counter, Tractor Out Moci09s e Feoaas, in OW Couper, Famuator Ost ass a Fe092se.0 | Feienia Pin OW, Coupe, Tansator Ostout a8 a Febaao, Fowensa 6. OI, Cowper, Faneetor Out ane a Feosa0, 8 Fovenia {Pn OI, Couper,Faneator Ostout suze a repeat, 8 in OF. Caupe,TansitorOutout 25 a Fepest,6,0 | Favenid {Pn OI, Couper, Tansitor Ostout wocioas x Fres20 Feensa Ie. TRED uroe200 . Feri00 Farenia Pate, Lend Pratovanetor aoe e reri00.8 ate, Lewd Pototewator noe e Ferze0 ‘ame, Lend Prottantor wRbi60 e Fersto O18, eve, erate nbaose 5 Frrsi, a O18, Lenas Tenet 03085 a Fersa0n O18, Lene, Trt pore) 3 cece: 10.18 Conad Protoransaor abs00 . 261 ‘Gent Sear PILL, Lanse, Phororemitor anor e 29CROSS-REFERENCE (continued) ‘5265 Gen Senne PCL Cntea,Potoraaator tanoeoe . ‘sor Sent Semone PICU Crea Pototranaator tanoson e soa Gent Soret PILL Lane Potoranaator ‘waoeot e ss? ‘Gen Sener PILL, Lone, Phototantor ‘anbeo8 e {65600,3.6,9,10 | Gen? Sensors TO, Led, Poteet. tur0300 B sera Gent Semone FO1B, Lend, rattaristor sn03050 a 670 Gov Sensors TONE, Lene, Prottanitor ‘wnoa050 a 600 Gert Sensors O18, Lees, Protoasittor noaeo a Bias oe hm OlP cower Transtar Oxtst wat a wntaa ce Gh OP Couper TramatorOutat wita a Bitae ce {Pi DIP Couper Transat Ontut Hitae a Hitas oe 8.5m Ol? Couper Traestor Output Bias a ivasz0 ce {in OI Couper Trantor Ontat ivasz0 a rvastoo oe 60 O1 Couper Transtar Outout nivasico | A Howat ce {hn OP Couper Tomer Oust ne . Bitaae oe {Pi DIP Couser Transtar Ontout an 8 Bier ce 6m Ol? CouserOainatn Out water a Hea ce {Pin Dip Couper Drinaton Ont Hite * hezss ce {in Ol Coupler Derington Output rte2s 4 Bienes | 6 ‘e008 a Hnonaaa | Ge {in OIF Couper V. Traitor Moes0ot oe maz Unena Gh Ol Couner TramatorOuout ie a nae. Utena hn Ol Couper Tamator Outat ae a no Lion 6 DI Couper Traastor Outout oe a ead Utena {mn DIP Couper Dethrgton Out sn e wo ce ‘7018 tenes Proorse Mabon ° uae ce 0.8 Lees Photoainaton vuaos6o a ast ce TOMB Lemes Protentor tan0300 a Chae ce Tose Photoranenrs thane a Lisa, oe PILL, Lene, Posotraetor sunso2 a 2:10CROSS-REFERENCE [continued eriece Cons Pte, Lena Photovanitor nosso e mae on Pate, Lense, Prototassor suRo160 c see a Pte, Len, Protovanitar tarots0 é tneroa & Paste Lene, 1B LED MLED900 € wMcazi0 et Gin OI, Concer Darinaton Outpt wacx2n0 a wmexaat et i, BI, Couper Bainaton Outer eazat a tacs2400, ot in DIP Count SCR Oarout Mocaort oF wer? a (Pin, DIP CavplerFanstor Outout wer? * moze a oP, Nene a 130 Spiron FON, Lea, LR LED MLeoa0 a iat piven O48, Lee, 1A LED Meese | correo Ontron ic Lard LR, LED E0900 © ‘orsoo Optron Lara Potoraestor beso e ‘ore00 ptron PILL Leta Poteraator wunoso a ‘eo Optron PILL Lud Poteau was. a ‘ve03 ptron PILL, Lane Photoeanastor oso a ‘orcas Optran PILL Lamed Pototranostor wbgoe a ‘orse0 pron PICU Cana Povoramnator wooo a reat etron PICU Lense Possraastor, wunoso 4 orses pron PILL. Lena Povotraestor oso2 a reat ren PICU Lana Povorarntor ‘nba a ‘orsco Seton O18 Lene Potorenstor O90 a corso Seton O48 Lened Potaeasstor bate 5 corecs ‘ton 0:8 Lees Phototraaitor M0200 a ‘rece tron O48 Lemed Photon ‘an0300 & ‘oreos prion 018 Lemos Phototantor bao 5 ‘oreo ron O18 LemedPhotonetor ‘0300 a ‘opiaiso tron 6.9, OP, Couper Trantor Output Moc1006 a ons: prem {-n, OI, Cowper Tartar Output oar * oriaise Series {Pi BI, Couper Tanitor Ovtout ‘noe ‘ onzes2 Optren ‘Shin OI, Gow Tannatar Outout in * so2uo2 Serctromet PICU Lana Photonuator wow * Seauos Sortronse PILL nad Pororanatr timosos a Sonat Sevonst PILL Ln Photonuator eo? a an(CROSS-REFERENCE (continued) ever | Manatctrer Dereon Eeusene | Code sozar2 Specvones BILL, Lanes Protovanine wrceos a so1e201.2 | Speevanee TO%e Far Wino Pa, Protedanington wurosio a soso Sovcront O18, Lend Prondeington woroa%e a sosaooa Spactronet T0418, Lened Protdgton twn0380 x ses} Spectromet TOMB, Lenses Protcnaton tun0500 s soeeeo.1 Spirent TOA8; Lemed rotorenstor wwno3082 * so54e0 2 Soectronet TOMB, Lered rotamer ro3088 & xs, Spactromes in OW. 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POWER OUTPUT versus FHGURE 2 — FORWARD CHARACTERISTICS eae Prot [papa 4 PEL Po 1 eal ech ee FIGURES SPATIAL RADIATION PATTERN oo oe 3-28® MOTOROLA MLED900 INFRARED-EMITTING DIODE designed for applications requiring high power ovtout, low drive ower and very fast response time. The device used in industrial procesing 4nd contrat, light modulator, shaft or position encoders, Punched card readers, optical switching, and logic crcute. It is Specially matched for use with silicon detectors ‘High Power Output — 550 uW (Typ @ IF = 50 ma 1 fared Emission — 990 0m (TP) | Low Drive Curent ~ 10 mA for 120 uW (Typ) Unique Med Lens for Dura Eeonomica Plastic Package ity and Long Lite INFRARED-EMITTING DIODE 930.am, PN GALLIUM ARSENIDE MAXIMUM RATINGS Rene vane Va 20 Vote Tots Deve Dsioaion @ Ta = 58 Poin | 120 mw eran sor 25°. 20 | mwte, ‘Doeraong an Storage Hunton Tie] wowie | °c Tenge Range [THERMAL CHARACTERISTICS Tras! Reastnc,Junton to Ambien Se a © Sreecamg aoe Corea Rarcshsia - TINS ficial oe 7 eee arama 3-29MLED900 ELECTRICAL CHARACTERISTICS Ta = 259C unless others noted OPTICAL CHARACTERISTICS [Tq - 25C unless otherwise noted)® MOTOROLA MLED930 INFRARED-EMITTING DIODE INFRARED-EMITTING DIODE 300 nm designed fr applications requiring high pow out, ow des ree ee tomer and very fost respore ime. Thi dvr a i oda 250 MILLIWATTS frocesing and contol, ight modulator shat or postion encoders, Dunched tara rears, optical switching, and loge oreuta is Spectally matched for ue with silicon detectors HignPower Outout — 650, n¥ (Typ) @ Ie = 100.mA 1 Infrared Emission ~ 900 nm (Fy) Low Drive Current — 10:mA for 70,4W (Typ) | Popular TO:18 Type Package for Easy Handling and Mounting ‘© Hermetic etal Package for Stability and Reliability ;| sorneoe Cee maximum narines na m ape aa z Sh vm va [30 we iy roca Gums Coma eo [ti Tea on oan aie [wens | | Tiina cna acTERTES oe cnrisien ea] as] ‘ Tonia eapeaamea [ia Tap ‘ 3-81MLED930 ELECTRICAL CHARACTERISTICS 119 «250 vu ater ote tH Towers e 0 ‘OPTICAL CHARACTERISTICS Ifa = 25°C ven aipennse ne) Chri Fagne. | Syabor[ We [Tye [an] une Sone ine al wah 7 oe ze om F1GURE 2 - POWER OUTPUT vers JUNCTION TEMPERATURE 3:32& MOTOROLA M0C119 NPN PHOTO DARLINGTON AND PN INFRARED EMITTING DIODE Gali Arsenide LEO opteally coupled to @ Silicon Photo Dartington Transistor designed for appications requiring electrical ‘solation, high-current wansfer ratios, small package size and low ost; such a5 interfacing and coupling systems, phase and feedback contol, slidatae felays and general-purpose switching etcuits 1c= 30mA Min) ths Bas (Tye opto COUPLER /ISOLATOR DARLINGTON OUTPUT + Economia, Comsct, ual a Line Package (MAXIMUM RATINGS ITa 25°C new omer rod) paseo ea ere eet Tn “aera Te [ane toe PHOTOTRANSISTOR MAXIMUM RATINGS eestor Someone ae ee a — P| in See TOTAL DEVICE RATINGS: ater? 4 Tots! Device Dasipation @ Ta = 25°C PO 30 mw ™ Ceaten gna = TI] W Coan cin Tone aa abet eee ae Tn PET] |“ Betieeseaae fA a cmeTens| ments | Ce fog iaa (sy 3-33MOC119 LED CHARACTERISTICS (r= 28°C ules otherwise need) ‘harcirtie ce ‘Ree Lea Goren 9 = [e005 [100 oa Wao 0¥, RU = 10M onm) Taps ~e = 75 = ¥ ‘PROTOTRANSISTOR CHARACTERISTICS [Tq = 25°C snd i= Oven omen SoMa Coes Symbot_| Win [Wye] Woe [on TotestorErvter Dak Gent, veeco | 30 [100 va Wee t0¥.te eo ‘oltre Beaks Var Vienceo | 30 @ = vane igs 10048.Ig 0! "COUPLED CHARACTERISTICS [Ta = 20°C nin oars WaT ‘horse a A (yeu 7 7 7 Caer Emer Snsravon Vora 1 Veet oF ve ven Tics 1OmA, ip 18 mal Talaton Cnowstanee = = @ = F (Wr0,te1ouns) “SHITERING CHARACTERISTICS gun 45) Wee 10, i¢= 25m. Ry = 1008) Fain w : @ = os Wee= 10V.1e* 25mA, R= 10082 1 Poe Tost Pui Wan» 30048, Duy Cyoe = 2 (2) For it wet LED pun 1 and are cntenon and Phat Transtar in and are common, (3 tp asuedto vedic ~20mA angie 20mAPP u TOM: Uo jan wen ct 0 eo an a at cate 3:34moc119 DC CURRENT TRANSFER CHARACTERISTICS FIGURE 2 COLLECTOR CURRENT venus FIGURE 3~ COLLECTOR CURRENT wernt ‘COLLECTOR EMITTER VOLTAGE ‘i00e CURRENT 1 SWITCHING CHARACTERISTICS woouanoe'et rm wore Tihs Wr yh i rts wel gh | few = | E I = non wo u out — et HI 3-35