Ordering number : EN0199 2SB544 / 2SD400

Preliminary

SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors

2SB544 / 2SD400 Low-Frequency Power Amplifier

Electronic Governor Applications

Specifications ( ) : 2SB544
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)25 V
Collector-to-Emitter Voltage VCEO (--)25 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC (--)1 A
Collector Current (Pulse) ICP (--)2 A
Collector Dissipation PC 900 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)20V, IE=0A (--)1.0 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1.0 μA
hFE1 VCE=(--)2V, IC=(--)50mA 60* 560*
DC Current Gain
hFE2 VCE=(--)2V, IC=(--)1A 30
Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 180 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (25)15 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)500mA, IB=(--)50mA (--0.15) 0.1 (--0.7)0.3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)500mA, IB=(--)50mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)25 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)25 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V

* : The 2SB544 / 2SD400 is classified by hFE at 50mA as follows.

Rank D E F G
hFE 60 to 120 100 to 200 160 to 320 280 to 560

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71608 TI IM No.0199-1/4
 2SB544 / 2SD400

Package Dimensions
unit : mm (typ)
7520-002

6.0 4.7
5.0
8.5

0.5
3.0

0.6
0.5 0.5
1.0

14.0

1 2 3 1 : Emitter
2 : Collector
3 : Base

1.45 1.45 SANYO : MP

IC -- VCE IC -- VCE
--1.0 1.0
2SB544 --8mA --7mA 2SD400 6mA
--6mA 5mA
--0.8 0.8
--5mA
Collector Current, IC -- A

Collector Current, IC -- A

4mA
--4mA
--0.6 0.6 3mA
--3mA
2mA
--0.4 --2mA 0.4

--1mA 1mA
--0.2 0.2

0
IB=0mA 0
IB=0mA
0 --1 --2 --3 --4 --5 0 1 2 3 4 5
Collector-to-Emitter Voltage, VCE -- V IT04917 Collector-to-Emitter Voltage, VCE -- V IT04918
IC -- VBE IC -- VBE
--1.2 1.2
2SB544 2SD400
VCE= --2V VCE=2V
--1.0 1.0
Collector Current, IC -- A

Collector Current, IC -- A

--0.8 0.8

--0.6 0.6
5°C
5°C

25°C
--25°C
25°C

--0.4 0.4
Ta=7
--25°C
Ta=7

--0.2 0.2

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT04919 Base-to-Emitter Voltage, VBE -- V IT04920

No.0199-2/4
 2SB544 / 2SD400
hFE -- IC hFE -- IC
5 5
2SB544 2SD400
VCE= --2V VCE=2V

3 Ta=75°C 3
Ta=75°C
DC Current Gain, hFE

DC Current Gain, hFE

25°C 25°C
2 2

--25°C --25°C

100 100

7 7

5 5
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC -- A IT04921 Collector Current, IC -- A IT04922
f T -- IC f T -- IC
3 3
2SB544 2SD400
VCE= --10V VCE=10V
Gain-Bandwidth Product, f T -- MHz

Gain-Bandwidth Product, f T -- MHz

2 2

100 100

7 7

5 5
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A IT04923 Collector Current, IC -- A IT04924
Cob -- VCB Cob -- VCB
100 100
2SB544 2SD400
f=1MHz f=1MHz
7 7
Output Capacitance, Cob -- pF

Output Capacitance, Cob -- pF

5
5

3
3

2
2

10

10
7

7
5 7 --1.0 2 3 5 7 --10 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V IT04925 Collector-to-Base Voltage, VCB -- V IT04926
VCE(sat) -- IC VCE(sat) -- IC
7 7
2SB544 2SD400
5 5
IC / IB=10 IC / IB=10
Saturation Voltage, VCE(sat) -- mV

Saturation Voltage, VCE(sat) -- mV

3 3

2 2

--100 100

5°C
7 7
Collector-to-Emitter

Collector-to-Emitter

°C
=7 75
5 Ta 5
Ta
=
°C 5°C 25°C
3 5 °C 3 --2
--2 25
2 2

--10 10
7 7
5 5
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC -- A IT04927 Collector Current, IC -- A IT04928

No.0199-3/4
 2SB544 / 2SD400
VBE(sat) -- IC VBE(sat) -- IC
3 3
2SB544 2SD400
IC / IB=10 IC / IB=10
Saturation Voltage, VBE(sat) -- V

Saturation Voltage, VBE(sat) -- V

2 2

--1.0 1.0
Ta= --25°C Ta= --25°C
7 7
75°C
Base-to-Emitter

Base-to-Emitter
75°C
25°C 25°C
5 5

3 3

2 2
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC -- A IT04929 Collector Current, IC -- A IT04930
ASO PC -- Ta
3 1000
2SB544 / 2SD400 2SB544 / 2SD400
2
900
10
1m

0m

Collector Dissipation, PC -- mW
s

1.0 s 800
10
Collector Current, IC -- A

ms

700
5
DC 600
3 op
era 500
2 tio
n
400

0.1
300

5 200
Ta=25°C
Single pulse 100
3
2
For PNP, the minus sign is omitted. 0
5 1.0 2 3 5 10 2 3 5 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT04931 Ambient Temperature, Ta -- °C IT04932

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.

PS No.0199-4/4