A940

PNP Epitaxial Silicon Transistor

TO-220
VERTICAL DEFLECTION OUTPUT POWER
AMPLIFIER
Complement to C2073
Collector-Emitter Voltage: VCEO=-150V
Collector Dissipation: PC(max)=1.5W

Absolute Maximum Ratings (TA=25oC)

Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -150 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Collector Dissipation PC 25 W
o
Junction Temperature TJ 150 C
Storage Temperature TSTG -55~+150
o
C 1. Base 2. Collector 3. Emitter

Electrical Characteristics (TA=25oC)

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector Cut-off Current ICBO VCB=-120V, IE=0 -10 μA

Emitter Cut-off Current IEBO VEB=-5V, IC=0 -10 μA

DC Current Gain hFE VCE=-10V, IC=-500mA 40 75 140

Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA -1.5 V

Base-emitter ON Voltage VBE(on) IC=-500mA, VCE=-10V -0.65 -0.75 -0.85 V

Output Capacitance COB VCB=-10V, IE=0, f=1MHz 55 pF

Current Gain Bandwidth Product fT VCE=-10V, IC=500mA 4 MHz

Elite Enterprises (H.K.) Co., Ltd. Part No.: A940

Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Page: 1 / 1
Free Datasheet http://www.nDatasheet.com