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Experiment - 1
1-1 Object:
1-2 Theory:
In this case, the electrons are which cause that this material type will
be capable of conducting current. It is said that the electrons are Majoraty
carriers and the holes are the minority ones. Being N the abbreviation to
negative word.
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
the P-type semiconductor, while the electrons in conduction band are the
minority carriers. The letter P means positive.
It is possible to produce a crystal that has one half of the P-type and
the other half of the N-type. Such a PN crystal is usually known with the
name of diode.
The sequence of one electron in figure (1-1) from the moment when
it moves from the negative terminal of the battery to the positive terminal
is the following:
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
There is a small current in the circuit due to the minority carriers and
to the surface impurities, called inverse current (IR).
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
The figure (1-4) shows a simple circuit, which can used for the
voltage and current measurement of diode. We can measure the diode
current by connect an ammeter in series with diode, and to measure the
diode voltage we can connect a voltmeter in parallel with diode.
With the source polarities indicated, the diode remains with direct
polarization; the bigger the applied voltage of the source is, the bigger
diode current is. With the change of the source voltage, we can measure
the diode current and the diode voltage. Representing in a graphic the
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
current, which flows through the diode as contrasts with the applied
voltage we can obtain figure (1-5).
When direct polarization is applied, the diode does not conduct until
the barrier potential is obtained. For this reason, the current is small as it
gets close to the barrier (about 0.7V for silicon diode). Above 0.7V, small
voltage increase produces a great current growth.
There are two way to destroy a diode, one way is by increase the
inverse breakdown voltage. And the other is to exceed the nominal
maximum power. Each device has power dissipation (IDVD). if this power
dissipation is very high, the device is burnt.
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
1-3 Procedure:
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
Table 1-1
VS (V) ID (A) VD (V) RD (Ω)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.85
Table 1-2
VS (V) ID (A) VD (V) RD (Ω)
+1
+2
+3
+4
+5
+6
MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi
in each step, and fill in table 1-3. And then calculate the diode
resistance at high forward voltages.
Table 1-3
VS (V) ID (A) VD (V) RD (Ω)
-1
-2
-3
-4
-5
-6
1-4 Discussion:
2. With the data of tables 1-1, 1-2, and 1-3, draw the I-V
characteristics of diode.
3. How we can find the polarity of a diode and make sure that it has
not been damaged.
6. Why the diode current is very low at source voltages less than Vd
(0.7V Si, 0.3 V Ge) of diode?
MD