MOSFET

Metal-Oxide-Semiconductor-Field-
Effect-Transistor
 MOSFET
• MOSFET - Metal Oxide Semiconductor Field Effect Transistor
• Main difference from BJT – there is no actual pn junction as the p and n
materials are insulated from each other.
• Current carrier either holes or electrons
• There are depletion MOSFETs (D-MOSFET) and enhancement MOSFETs
(E-MOSFET).
• Also used as amplifier and logic switches

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D-MOSFET E-MOSFET 15 April 2014
 MOSFET
 Two basic types of MOSFETs:
i. Depletion MOSFET (D-MOSFET)
ii. Enhancement MOSFET (E-MOSFET)

 MOSFET has no p-n junction structure

 The Gate of the MOSFET is insulated from the
channel by a Silicon Dioxide (SiO2) layer

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 CURRENT-
Current-controlled amplifiers
CONTROLLED
AMPLIFIERS
VOLTAGE CONTROLLED
AMPLIFIERS
 ADVANTAGES Introduction.. (AdvantagesOF of FET)


FET
High input impedance (M)(Linear AC amplifier system)
 Temperature stable than BJT
 Smaller than BJT
 Can be fabricated with fewer processing
 BJT is bipolar – conduction both hole and electron
 FET is unipolar – uses only one type of current carrier
 Less noise compare to BJT
 Usually use as logic switch
Basic Construction of
MOSFET
 Metal terminal
 Oxide insulator
 Semiconductor
material creating
the source-drain
channel
 Semiconductor
material can be
p-type or n-type

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 Basic Structure of D-
MOSFET

•The drain and source are diffused into the substrate material

•Both terminals are connected by a narrow channel adjacent to the insulated gate

•Since the gate is insulated from the channel, either a positive or a negative gate voltage can be
applied
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 D-MOSFET
 D-MOSFET can be operated in either of two modes
 The depletion mode
 The enhancement mode

 N-channel D-MOSFET operates in

 Depletion mode - when negative VGS is applied
 Enhancement mode - when a positive VGS is applied

 D-MOSFETs are generally operated in the depletion

mode

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 Depletion Mode
•With a negative VGG, the electric field produces in the channel drives
electrons away from a portion of the channel near the SiO2 layer
•This portion is depleted of carriers and the channel width is effectively
narrowed
•The channel conductivity is decreased
•Further increasing the negative voltage at the gate pushes even more
electrons away, narrowing the channel and decreasing the current

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 Enhancement Mode
•VGS can be made positive without any concern for the consequences
of forward biasing a junction
•With a positive VGG, more conduction electrons are attracted into the
channel
•The channel conductivity is enhanced (increased)

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 D-MOSFET schematic symbols.

•As with any FET, PN junction must never be forward biased.

•Apply a positive voltage to the n-type Drain

•The substrate (p-type) is connected to the Source

•The source is connected to the most negative point (or ground)

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 D-MOSFET general transfer characteristic curves.

•Depletion Region
VGS < 0V

•Enhancement Region
VGS > 0V

•The maximum drain

current is greater than IDSS

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 BJT vs MOSFET
 ____________________  The gate of a MOSFET is
____________________ insulated from the
 There is no channel channel by a SiO2 layer
width.  The channel width is
 npn and pnp controlled by the action of
the electric field
 Operates in depletion and
enhancement modes

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 E-MOSFET
Construction
(n-channel)

•No conducting channel between Drain and Source

•The substrate extends completely to the SiO2 layer
•Apart from the absence of N-type channel between Drain and Source, the
construction is similar to that of a D-MOSFET
•A channel is induced by applying a VGS greater than the threshold value, VGS(th)
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 E-MOSFET Operation (n-channel)

•The positive gate voltage attracts electron from the substrate to the region along the
insulating layer
•If the gate is made sufficiently positive, enough electrons will be pulled up from the
substrate
•An N-channel starts to form
•The channel does not form uniformly but rather begins to form on the drain side
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 E-MOSFET Operation (n-channel)

•As the gate voltage increases, the channel length also increases
•Finally, the gate voltage increases to the point (VGS(th)) where the
channel reaches the source, and conduction begins
•The conductivity of the channel is enhanced by increasing the VGS
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 E-MOSFET Transfer Characteristic

•The curve is on the enhancement region

ID = 0A when VGS = 0V and ID = 0A until VGS reaches the threshold value
•Has no IDSS parameter
I D ( on)
ID = k(VGS – VGS(th))2 where
k
(VGS  VGS (th ) ) 2

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 E-MOSFET Schematic Symbols

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Water analogy for the
Water analogy FETJFET
for the control
control
mechanism
mechanism