IRFP460N, SiHFP460N

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 500
Requirement Available
RDS(on) (Ω) VGS = 10 V 0.24
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Qg (Max.) (nC) 124 Ruggedness COMPLIANT

Qgs (nC) 40 • Fully Characterized Capacitance and Avalanche Voltage

Qgd (nC) 57 and Current
Configuration Single • Effective Coss Specified
• Lead (Pb)-free Available
D
TO-247 APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G • High Speed Power Switching

S TYPICAL SMPS TOPOLOGIES

D
G • Full Bridge
S
• Power Factor Correction Boost
N-Channel MOSFET

ORDERING INFORMATION
Package TO-247
IRFP460NPbF
Lead (Pb)-free
SiHFP460N-E3
IRFP460N
SnPb
SiHFP460N

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ± 30
TC = 25 °C 20
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 13 A
Pulsed Drain Currenta IDM 80
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energyb EAS 340 mJ
Repetitive Avalanche Currenta IAR 20 A
Repetitive Avalanche Energya EAR 28 mJ
Maximum Power Dissipation TC = 25 °C PD 280 W
Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.8 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91236 www.vishay.com

S-Pending-Rev. B, 23-Jul-08 WORK-IN-PROGRESS 1
IRFP460N, SiHFP460N
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40
Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 0.45

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 580 - mV/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V
Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA
VDS = 500 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 Ab - - 0.24 Ω
Forward Transconductance gfs VDS = 50 V, ID = 12 A 10 - - S
Dynamic
Input Capacitance Ciss - 3540 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 350 -
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 30 -
pF
VDS = 1.0 V, f = 1.0 MHz - 3930 -
Output Capacitance Coss
VGS = 0 V VDS = 400 V, f = 1.0 MHz - 95 -
Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 200 -
Total Gate Charge Qg - - 124
ID = 20 A, VDS = 400 V
Gate-Source Charge Qgs VGS = 10 V - - 40 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 57
Turn-On Delay Time td(on) - 23 -
Rise Time tr VDD = 250 V, ID = 20 A - 87 -
RG = 4.3 Ω, RD= 13 Ω, ns
Turn-Off Delay Time td(off) see fig. 10b - 34 -
Fall Time tf - 33 -
Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 20
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S
- - 80

Body Diode Voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb - - 1.8 V

Body Diode Reverse Recovery Time trr - 550 825 ns
TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 7.2 10.8 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.

www.vishay.com Document Number: 91236

2 S-Pending-Rev. B, 23-Jul-08
 IRFP460N, SiHFP460N
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100 100
VGS
TOP 15V
12V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

10V
9.0V TJ = 150 ° C
10 8.0V
7.0V
6.0V
BOTTOM 5.0V
10
1

TJ = 25 ° C
0.1
1

5.0V
0.01

20µs PULSE WIDTH V DS = 50V

TJ = 25 °C 20µs PULSE WIDTH
0.001 0.1
0.1 1 10 100 5 6 7 8 9 10 11
VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

100 VGS 3.5

TOP 15V ID = 20A
RDS(on) , Drain-to-Source On Resistance

12V
10V
I D , Drain-to-Source Current (A)

9.0V 3.0
8.0V
7.0V
6.0V
BOTTOM 5.0V 2.5
10
(Normalized)

2.0

1.5
5.0V
1
1.0

0.5
20µs PULSE WIDTH
TJ = 150 °C VGS = 10V
0.1 0.0
0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( °C)
Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91236 www.vishay.com

S-Pending-Rev. B, 23-Jul-08 3
IRFP460N, SiHFP460N
Vishay Siliconix

100000
VGS = 0V, f = 1 MHZ 100
Ciss = Cgs + Cgd, Cds SHORTED

ISD , Reverse Drain Current (A)

Crss = Cgd
TJ = 150 ° C
10000 Coss = Cds + Cgd
C, Capacitance(pF)

Ciss 10

1000 Coss

TJ = 25 ° C
1
Crss
100

10
V GS = 0 V
0.1
1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 1000
ID = 20A
VDS = 400V OPERATION IN THIS AREA
LIMITED BY R DS(on)
VGS , Gate-to-Source Voltage (V)

VDS = 250V
ID, Drain-to-Source Current (A)

16 VDS = 100V
100

12

10
100µsec
8
1msec
1
4 T A = 25°C
T J = 150°C 10msec
FOR TEST CIRCUIT
SEE FIGURE 13 Single Pulse
0 0.1
0 20 40 60 80 100 120 140 10 100 1000 10000
QG , Total Gate Charge (nC) VDS , Drain-toSource Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91236

4 S-Pending-Rev. B, 23-Jul-08
 IRFP460N, SiHFP460N
Vishay Siliconix

RD
VDS
20
VGS
D.U.T.
RG
+
- VDD
15
ID , Drain Current (A)

10V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10
Fig. 10a - Switching Time Test Circuit

VDS
5
90 %

0
25 50 75 100 125 150
TC , Case Temperature ( °C) 10 %
VGS
t d(on) tr t d(off) t f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.1 0.20

0.10
0.05
0.02
0.01 SINGLE PULSE P DM
(THERMAL RESPONSE)
0.01
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V DS

15 V
tp

L Driver
VDS

RG D.U.T. +
- VDD
A
IAS A
20 V
tp 0.01 Ω I AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91236 www.vishay.com

S-Pending-Rev. B, 23-Jul-08 5
IRFP460N, SiHFP460N
Vishay Siliconix

750
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 8.9A
12.6A
600 BOTTOM 20A

450

300

150

0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ

12 V 0.2 µF
0.3 µF
10 V
QGS Q GD +
V
D.U.T. - DS

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91236

6 S-Pending-Rev. B, 23-Jul-08
 IRFP460N, SiHFP460N
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91236

Document Number: 91236 www.vishay.com

S-Pending-Rev. B, 23-Jul-08 7
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All product specifications and data are subject to change without notice.

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Revision: 18-Jul-08 1