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 FGH60N60UFD — 600V, 60A Field Stop IGBT
March 2015

FGH60N60UFD
600V, 60A Field Stop IGBT
Features General Description
• High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop
• Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A IGBTs offer the optimum performance for solar inverter, UPS,
• High Input Impedance welder and PFC applications where low conduction and switch-
ing losses are essential.
• Fast Switching
• RoHS Compliant

Applications
• Solar Inverter, UPS, Welder and PFC

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ±20
VGES V
Transient Gate-to-Emitter Voltage ±30
Collector Current @ TC = 25oC 120 A
IC
Collector Current @ TC = 100oC 60 A
ICM (1) Pulsed Collector Current @ TC = 25oC 180 A
o
Maximum Power Dissipation @ TC = 25 C 298 W
PD
Maximum Power Dissipation @ TC = 100oC 119 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering oC
TL 300
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive test , Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.33 C/W
o
RθJC(Diode) Thermal Resistance, Junction to Case - 1.1 C/W
o
RθJA Thermal Resistance, Junction to Ambient - 40 C/W

©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH60N60UFD Rev.1.4
 FGH60N60UFD — 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60N60UFDTU FGH60N60UFD TO-247 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA 600 - - V
ΔBVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 μA - 0.67 - V/oC
/ ΔTJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 μA, VCE = VGE 4.0 5.0 6.5 V
IC = 60 A, VGE = 15 V - 1.9 2.4 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V,
- 2.1 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 2855 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 325 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 110 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 23 - ns
tr Rise Time - 58 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 60 A, - 130 - ns
tf Fall Time RG = 5 Ω, VGE = 15 V, - 40 80 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.81 - mJ
Eoff Turn-Off Switching Loss - 0.81 - mJ
Ets Total Switching Loss - 2.62 - mJ
td(on) Turn-On Delay Time - 22 - ns
tr Rise Time - 61 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 60 A, - 141 - ns
tf Fall Time RG = 5 Ω, VGE = 15 V, - 63 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 1.92 - mJ
Eoff Turn-Off Switching Loss - 1.23 - mJ
Ets Total Switching Loss - 3.15 - mJ
Qg Total Gate Charge - 188 - nC
VCE = 400 V, IC = 60 A,
Qge Gate to Emitter Charge - 21 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 97 - nC

FGH60N60UFD Rev.1.4 2 www.fairchildsemi.com

 FGH60N60UFD — 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

TC = 25oC - 2.0 2.6
VFM Diode Forward Voltage IF = 30 A V
TC = 125oC - 1.8 -
TC = 25oC - 47 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 179 -
IF = 30 A, diF/dt = 200 A/μs
TC = 25oC - 83 -
Qrr Diode Reverse Recovery Charge nC
o
TC = 125 C - 567 -

FGH60N60UFD Rev.1.4 3 www.fairchildsemi.com

 FGH60N60UFD — 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

180 180
o o
TC = 25 C TC = 125 C
20V 15V 15V
150 150 20V
12V

Collector Current, IC [A]

Collector Current, IC [A]

12V
10V
120 120
10V

90 90

60 60
VGE = 8V
VGE = 8V
30 30

0 0
0 2 4 6 8 0 2 4 6 8
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
180 180
Common Emitter Common Emitter
VGE = 15V VCE = 20V
150 o
150 o
TC = 25 C
Collector Current, IC [A]

TC = 25 C
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
120 120

90 90

60 60

30 30

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0 20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]

o
Collector-Emitter Voltage, VCE [V]

VGE = 15V TC = -40 C

3.5
16

3.0
120A
12
2.5

8
2.0
60A
120A
4 60A
1.5
IC = 30A IC = 30A
1.0 0
25 50 75 100 125 0 3 6 9 12 15 18
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGH60N60UFD Rev.1.4 4 www.fairchildsemi.com

 FGH60N60UFD — 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]

o o
TC = 25 C TC = 125 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

60A 120A 120A

4 4 60A

IC = 30A IC = 30A

0 0
0 3 6 9 12 15 18 0 3 6 9 12 15 18
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

6000 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
TC = 25 C 12
Cies 300V
Capacitance [pF]

4000 VCC = 100V

200V
9

Coes
6
2000

3
Cres

0 0
1 10 30 0 50 100 150 200
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics
500 300

10μs
100
100
100μs
Collector Current, Ic [A]

Collector Current, IC [A]

10 1ms

10 ms
1 DC 10
Single Nonrepetitive
Pulse TC = 25oC
0.1
Curves must be derated
linearly with increase Safe Operating Area
o
in temperature VGE = 15V, TC = 125 C
0.01 1
1 10 100 1000 1 10 100 1000
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

FGH60N60UFD Rev.1.4 5 www.fairchildsemi.com

 FGH60N60UFD — 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
300 6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
o
TC = 25 C
1000 o
Switching Time [ns]

Switching Time [ns]

100 TC = 125 C
tr
td(off)

Common Emitter 100

tf
VCC = 400V, VGE = 15V
td(on) IC = 60A
o
TC = 25 C
o
TC = 125 C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [Ω] Gate Resistance, RG [Ω]

Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
500 1000
Common Emitter Common Emitter
VGE = 15V, RG = 5Ω VGE = 15V, RG = 5Ω
o o
TC = 25 C TC = 25 C
o tr o
TC = 125 C TC = 125 C
Switching Time [ns]
Switching Time [ns]

100

td(off)

100

td(on)
tf

10 30
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector Current, IC [A] Collector Current, IC [A]

Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current
20 20
Common Emitter Common Emitter
VCC = 400V, VGE = 15V 10 VGE = 15V, RG = 5Ω
10 I = 60A o Eon
C TC = 25 C
o o
TC = 25 C
Switching Loss [mJ]

TC = 125 C
Switching Loss [mJ]

o
TC = 125 C

Eoff
Eon 1

1 Eoff

0.1
0 10 20 30 40 50 0 20 40 60 80 100 120
Gate Resistance, RG [Ω] Collector Current, IC [A]

FGH60N60UFD Rev.1.4 6 www.fairchildsemi.com

 FGH60N60UFD — 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

200 500

100 100 o
TC = 125 C

Reverse Current , IR [μA]

Forward Current, IF [A]

o
TJ = 125 C o 10
TJ = 25 C

o
TC = 75 C
10 1
o
TJ = 75 C

o
0.1
TC = 25 C o
TC = 25 C
o
TC = 125 C
1 0.01
0 1 2 3 4 0 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

200A/μs
80 200A/μs 50

di/dt = 100A/μs

60 diF/dt = 100A/μs 40

o
TC = 25 C
40 30
5 20 40 60 5 20 40 60
Forward Current, IF [A] Forward Current, IF [A]

Figure 23. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1
0.2
0.1
0.05
0.02 PDM
0.01
0.01
t1
single pulse t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

FGH60N60UFD Rev.1.4 7 www.fairchildsemi.com

 4.82
15.87
E 4.58
E B
15.37
A
4.13 12.81 E
3.53 6.85 3.65
E
6.61 3.51
0.254 M B A M

5.58
E 1.35
5.34
5.20 0.51
4.96
20.82
E 13.08 MIN
20.32

1 2 3 3 1
3.93 1.87
3.69
E 1.53 (2X) 16.25
E
15.75
1.60

2.77
2.43
0.71
5.56 0.51

1.35 2.66
1.17 2.29
0.254 M B A M
11.12

NOTES: UNLESS OTHERWISE SPECIFIED.

A. PACKAGE REFERENCE: JEDEC TO-247,

ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994

E DOES NOT COMPLY JEDEC STANDARD VALUE

F. DRAWING FILENAME: MKT-TO247A03_REV04
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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