MITSUBISHI IGBT MODULES

CM600HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

Y - THD (2 TYP.)
M

E E C

P
D E B
U R
G

T V - THD Description:
(2 TYP.)
Mitsubishi IGBT Modules
Q are designed for use in switching
X - DIA. L G N
applications. Each module consists
(4 TYP.)
Z of one IGBT in a single configura-
J J tion with a reverse-connected su-
S
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
F tem assembly and thermal man-
H K
agement.
Features:
W u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
E C u High Frequency Operation
u Isolated Baseplate for Easy
E
Heat Sinking
G
Applications:
u AC Motor Control
Outline Drawing and Circuit Diagram u Motion/Servo Control
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies
A 4.33 110.0 N 0.69 17.5
B 3.15 80.0 P 0.61 15.5 Ordering Information:
Example: Select the complete part
C 3.66±0.008 93.0±0.25 Q 0.51 13.0
module number you desire from
D 2.44±0.008 62.0±0.25 R 0.49 12.5 the table below -i.e. CM600HA-
E 1.57 40.0 S 0.45 11.5 24H is a 1200V (VCES), 600 Am-
F 1.42 Max. 36.0 Max. T 0.43 11.0 pere Single IGBT Module.
G 1.14 29.0 U 0.35 9.0 Type Current Rating VCES
Amperes Volts (x 50)
H 1.00 Max. 25.5 Max. V M8 Metric M8
CM 600 24
J 0.94 24.5 W 0.28 7.0
K 0.93 24.0 X 0.256 Dia. Dia. 6.50
L 0.83 21.0 Y M4 Metric M4
M 0.71 18.0 Z 0.12 3.0

Sep.2000
 MITSUBISHI IGBT MODULES

CM600HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Symbol Ratings Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 600 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 1200* Amperes
Emitter Current** (Tc = 25°C) IE 600 Amperes
Peak Emitter Current** IEM 1200* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 4100 Watts
Mounting Torque, M8 Main Terminal – 8.83~10.8 N·m
Mounting Torque, M6 Mounting – 1.96~2.94 N·m
Mounting Torque, M4 Terminal – 0.98~1.47 N·m
Weight – 560 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V – 2.5 3.4** Volts
IC = 600A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V – 3000 – nC
Emitter-Collector Voltage VEC IE = 600A, VGE = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 120 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 42 nF
Reverse Transfer Capacitance Cres – – 24 nF
Resistive Turn-on Delay Time td(on) – – 300 ns
Load Rise Time tr VCC = 600V, IC = 600A, – – 700 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 2.1Ω – – 450 ns
Times Fall Time tf – – 350 ns
Diode Reverse Recovery Time trr IE = 600A, diE/dt = –1200A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = –1200A/µs – 4.46 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.03 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.06 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.035 °C/W

Sep.2000
 MITSUBISHI IGBT MODULES

CM600HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)

1200 1200 5
15 12
Tj = 25oC VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

1000 COLLECTOR CURRENT, IC, (AMPERES) 1000 Tj = 25°C Tj = 25°C

VGE = 20V Tj = 125°C 4 Tj = 125°C

COLLECTOR-EMITTER
800 800
11
3
600 600

10
2
400 400
9
1
200 200
7
8
0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 200 400 600 800 1000 1200
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)

10 3 103
Tj = 25°C 2 Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8 103
IC = 1200A
COLLECTOR-EMITTER

7 102 Cies
5
6
IC = 600A
3
2
4 Coes
101
102
2 7
IC = 240A 5 VGE = 0V
Cres

0 3 100
0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 103 20
td(off)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

IC = 600A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, t rr, (ns)

t d(on)
16
VCC = 400V
tf
SWITCHING TIME, (ns)

VCC = 600V
t rr 12
102 102 102
tr
Irr
8

VCC = 600V
VGE = ±15V 4
RG = 2.1Ω di/dt = -1200A/µsec
Tj = 125°C Tj = 25°C

101 101 101 0

101 102 103 101 102 103 0 800 1600 2400 3200 4000 4800
COLLECTOR CURRENT IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.2000
 MITSUBISHI IGBT MODULES

CM600HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.03°C/W Zth = Rth • (NORMALIZED VALUE) Per Unit Base = R th(j-c) = 0.06°C/W
Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.2000