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RJK0389DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching REJ03G1722-0400
Rev.4.00
Sep 29, 2009
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Pb-free
• Halogen-free
Outline
5 6 7 8
1 8 9
G1 G2 1, 8 Gate
2, 3, 4, 9 Drain
4 3 2 1 5, 6, 7, 9 Source
4 3 2 1
S2 S2 S2
5 6 7 (Bottom View)
MOS1 MOS2 and
Schottky Barrier Diode
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 μA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 μA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state RDS(on) — 8.2 10.7 mΩ ID = 7.5 A, VGS = 10 V Note4
resistance RDS(on) — 11.8 16.5 mΩ ID = 7.5 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 32 — S ID = 7.5 A, VDS = 10 V Note4
Input capacitance Ciss — 860 — pF VDS = 10 V
Output capacitance Coss — 165 — pF VGS = 0
Reverse transfer capacitance Crss — 53 — pF f = 1 MHz
Gate Resistance Rg — 4.2 — Ω
Total gate charge Qg — 6.3 — nC VDD = 10 V
Gate to source charge Qgs — 2.3 — nC VGS = 4.5 V
Gate to drain charge Qgd — 1.4 — nC ID = 15 A
Turn-on delay time td(on) — 6.9 — ns VGS = 10 V, ID = 7.5 A
Rise time tr — 4.1 — ns VDD ≅ 10 V
Turn-off delay time td(off) — 40.8 — ns RL = 1.33 Ω
Fall time tf — 5.6 — ns Rg = 4.7 Ω
Body–drain diode forward voltage VDF — 0.84 1.10 V IF = 15 A, VGS = 0 Note4
Body–drain diode reverse trr — 20 — ns IF =15 A, VGS = 0
recovery time diF/ dt = 100 A/μs
Notes: 4. Pulse test
• MOS2
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 μA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 mA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, ID =1 mA
Static drain to source on state RDS(on) — 6.8 8.9 mΩ ID = 10 A, VGS = 10 V Note4
resistance RDS(on) — 10.5 14.7 mΩ ID = 10 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 38 — S ID = 10 A, VDS = 10 V Note4
Input capacitance Ciss — 1000 — pF VDS = 10 V
Output capacitance Coss — 240 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Gate Resistance Rg — 4.5 — Ω
Total gate charge Qg — 7.2 — nC VDD = 10 V
Gate to source charge Qgs — 2.9 — nC VGS = 4.5 V
Gate to drain charge Qgd — 2.2 — nC ID = 20 A
Turn-on delay time td(on) — 8.5 — ns VGS = 10 V, ID = 10 A
Rise time tr — 4.0 — ns VDD ≅ 10 V
Turn-off delay time td(off) — 39 — ns RL = 1.0 Ω
Fall time tf — 6.6 — ns Rg = 4.7 Ω
Schottky Barrier diode forward voltage VF — 0.44 — V IF = 2 A, VGS = 0 Note4
Body–drain diode reverse trr — 12 — ns IF = 20 A, VGS = 0
recovery time diF/ dt = 100 A/μs
Notes: 4. Pulse test
Main Characteristics
• MOS1
ID (A)
15 100
Channel Dissipation
1m
Drain Current
10 10 10 s
ms
Operation in
this area is
5 1 limited by RDS(on) DC
op
er
Tc = 25°C ati
on
1 shot Pulse
0.1
0 50 100 150 200 0.1 1 10 100
ID (A)
12 3.0 V 12
Drain Current
Drain Current
8 8
2.8 V
4 4 25°C
Tc = 75°C
VGS = 2.6 V –25°C
0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
100
VDS (on) (mV)
200
Drain to Source Saturation Voltage
150 30
VGS = 4.5 V
100 10
ID = 10 A
10 V
50 5A 3
2A
1
0 4 8 12 16 20 1 3 10 30 100 300 1000
3000
40
Capacitance C (pF)
1000
30 Ciss
ID = 2 A, 5 A, 10 A 300
20
VGS = 4.5 V 100 Coss
10
30 Crss
VGS = 0
10 V 2 A, 5 A, 10 A f = 1 MHz
0 10
–25 0 25 50 75 100 125 150 0 10 20 30
VGS (V)
30 12 30
VDS
20 8 20
VGS = 0, –5 V
10 4 10
VDD = 25 V
10 V
0 0
0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0
10
0
25 50 75 100 125 150
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05 PW
PDM D=
.02 T
0 se
0.03
1 p ul
0.0 hot PW
1 s T
0.01
1m 10 m 100 m 1 10
VDSS
1
EAR = L • IAP2 •
L 2 VDSS – VDD
VDS
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin
15 V
VDD
0
td(on) tr td(off) tf
ID (A)
15 100
Channel Dissipation
1m
Drain Current
10 10 s
10 ms
Operation in
this area is
DC
5 1 limited by RDS(on)
Op
er
ati
Tc = 25°C
on
0.1 1 shot Pulse
0 50 100 150 200 0.1 1 10 100
ID (A)
2.9 V
12 12
Drain Current
Drain Current
2.7 V
8 8
25°C
4 2.5 V 4
Tc = 75°C
–25°C
0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
100
VDS (on) (mV)
200
Drain to Source Saturation Voltage
150 30
VGS = 4.5 V
100 10
ID = 10 A 10 V
50 3
5A
2A
1
0 4 8 12 16 20 1 3 10 30 100 300 1000
40 3000
Capacitance C (pF)
1000
30 Ciss
300
ID = 2 A, 5 A, 10 A
20
Coss
100
VGS = 4.5 V
Crss
10
30
VGS = 0
10 V 2 A, 5 A, 10 A f = 1 MHz
0 10
–25 0 25 50 75 100 125 150 0 10 20 30
VGS (V)
30 12 30
VDS
20 8 20
VGS = 0, –5 V
10 4 10
VDD = 25 V
10 V
0 0
0 0 0.4 0.8 1.2 1.6 2.0
8 16 24 32 40
20
16
12
0
25 50 75 100 125 150
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05 PW
PDM D=
T
2
0.03 0.0
1 se
0 . 0
pul PW
hot T
1s
0.01
1m 10 m 100 m 1 10
VDSS
1
EAR = L • IAP2 •
L 2 VDSS – VDD
VDS
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin
15 V
VDD
0
td(on) tr td(off) tf
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
WPAK-D2 - PWSN0008DD-A WPAK-DV(2) 0.07g
Unit : mm
0.5 ± 0.15
5.1 ± 0.2 0.8 Max
0.4 ± 0.06
3.9 ± 0.2
0.9 ± 0.15
2.2 ± 0.2
(0.6) (0.6)
+0.1
+0.1
6.1 −0.3
5.9 −0.2
1.1 ± 0.2
0.45 ± 0.1
(0.05)
0.4 ± 0.15
0.5 ± 0.15
0.635Max 1.27 Typ 0.2 Typ 0.935 ± 0.15
2.9 ± 0.2
Stand-off
4.9 ± 0.1
0.05Max
0Min
(Ni/Pd/Au plating)
Ordering Information
Part No. Quantity Shipping Container
RJK0389DPA-00-J53 3000 pcs Taping