Professional Documents
Culture Documents
new charge carriers. Now these charge gain sufficient velocity and further
collides with the atoms and releases more charge carriers which leads to
the breakdown of junction called avalanche breakdown or avalanche
multiplication.
into the conduction band by breaking their covalent bonds .these electrons
then become free electrons which are available for conduction. A large
number of such free electrons will constitute a large reverse current
through the diode. This phenomenon is called zener breakdown.
np = ni2
Where,
n – Concentration of free electrons
p - Concentration of holes
ni – Intrinsic concentration
1. What is a transistor?
The Transistor is a three terminal device: Base, emitter and collector,
can be operated in three different configurations: common base, common
emitter and common collector.
According to configuration it can be used for voltage as well as current
amplification.
5. Calculate the collector and emitter current levels for a BJT with 𝜶 dc =
0.99 and IB = 20μA. [Nov/Dec 2014]
𝐼
𝛼𝑑𝑐 = 𝐶
𝐼𝐸
β = α / 1- α
= .99 / (1-.99)
= 99
𝐼
β dc = 𝐶 = IC / 20µA
𝐼𝐸
IC = 1980 µA = 1.98mA
IE = IB + IC = [20μA +1.98mA] = 2mA
6. Draw the circuit for a transistor in CB configuration.
qND 2
VP = a = 3.7V
2𝜀
γ= IEn / IE
29.A transistor has β = 150, find the collector and base current, if I E = 10mA.
[May/June 2016]
𝐼𝐸
IB = = 10mA / (1+150)
1+𝛽
IB =66.225 µA
IC = β IB
IC = 150 *66.225 µA
IC = 9.934mA
ID = IDSS {1-(VGS/VP)} 2
Where,
ID – Drain current
IDSS – Saturation drain current
VGS – Gate to Source voltage
VP – pinch off voltage
15.State the materials used for LASER diode and its applications.
The materials used for LASER diode are GaAs, AlGaAs and GaInAsP.
Applications of LASER diode are: CD players, laser printers and fibre optic
communications.
20.What is LDR?
The light dependent resistor is a two terminal semiconductor component
whose resistance decrease with increasing incident light intensity. It is also
called photo resistor or photo conductor and works on the principle of
photoconductivity.
➢ Diode can conduct current only in one ➢ Zener diode allows the conduction in both
direction. directions.
➢ A normal diode will be permanently ➢ Zener diode will not get damaged for a
damaged for a large reverse current. large reverse current.
➢ Amount of doping for P and N ➢ Amount of doping for P and N
semiconductor layers are different semiconductor layers are different
➢ Diodes are normally used for rectification ➢ Zener diodes are used for voltage
regulation.
28.What is PINFET?
PINFET stands for PIN field effect transistor. It is an optical receiver
formed by combining a positive – intrinsic –negative (PIN) photodiode and
field effect transistor in a single housing.
31.What is a FinFET?
➢ A Fin Field-effect transistor (FinFET) is a MOSFET double-gate
transistor, built on a substrate where the gate is placed on two, three, or
four sides of the channel or wrapped around the channel, forming a
double gate structure.
➢ These devices have been given the generic name "finfets" because the
source/drain region forms fins on the silicon surface.
➢ The FinFET devices have significantly faster switching times and higher
current density than the mainstream CMOS technology.
15.What is LED?
A diode which emits light when it is forward biased is called as Light
Emitting Diode (LED). The LED works on the principle of electro
luminescence.
16.What is LCD?
Liquid crystal display refers to the fact that these compounds have a
crystalline arrangement of molecules, yet flow like a liquid. LCD’s do not
emit or generate light, rather alter externally generated illumination.
18.Define phototransistor.
A transistor providing internal current multiplication when exposed to light
is called phototransistor.
23.What is CCD?
The charge coupled device is a part of a broader class of structure known
as charge transfer device. These are dynamic devices which move charge
along a pre-determined path under the control of clock pulses.
25.What is a DIAC?
DIAC is a two terminal bidirectional semiconductor switching device. It
can conduct in either direction depending upon the polarity of the voltage
applied across its main terminals. In operation DIAC is equivalent to two 4
layer diodes connected in anti parallel.
Advantages:
➢ Less power consumption.
➢ Uniform brightness with good contrast.
➢ Low cost.
➢ Low operating voltage and current.
Disadvantages:
➢ Limited temperature range.
➢ Requires an ac drive.
This happens on both sides of the junction. The hole is directed toward p-
region and electrons are directed towards n-region due to electric field present.
Due to this movement minority current is setup due to which voltage is
developed across p and n regions.
32.Draw the basic structure of TRIAC and its symbol. [May/June 2014]
UNIVERSITY QUESTIONS
PART B
4. Describe the action of PN junction diode under forward and reverse bias
condition. [April/May 2016]
5. The reverse saturation of a silicon PN junction diode is 10µA. Calculate the
diode current for the forward bias voltage of 0.6V at 25ºC. [April/May 2016]
6. Describe the action of PN junction diode under forward bias and reverse bias.
[Nov/Dec 2015]
7. Explain switching characteristics of a diode. [Nov/Dec 2015]
8. Explain and derive the diode current equation. [Nov/Dec 2015]
9. Explain how a barrier potential is developed at the PN junction. [Nov/Dec 2015]
10.Derive the expression for drift current density. [April/May 2015]
11.Determine the ideal reverse saturation current density in a silicon pn junction at
T=300K. Consider the following parameters in the silicon pn junction: Na = Nd =
1016 cm-3, ni = 1.5 x 1010 cm-3, Dn = 25 cm2/s, Tpo = Tno =5x10-7s, Dp = 10cm2/s, 𝜀𝑟
= 11.7. Comment on the result. [April/May 2015]
12.Derive the expression for diffusion current density. [April/May 2015]
13.Describe the deviation of V-I characteristics of PN junction diode from its ideal.
[April/May 2015]
14.Explain the operation of PN junction under zero voltage applied bias condition
and derive the expression for built in potential barrier. [Nov/Dec 2014]
15.Calculate the built in potential barrier in a PN junction. Consider a silicon PN
junction at 300K with doping densities Na = 1 x 1018 cm-3 and Nd = 1x 1015 cm-3.
Assume ni = 1.5x 1018 cm-3. [Nov/Dec 2014]
16.Explain the basic structure of the PN junction. [Nov/Dec 2014]
17.Write short notes on diode switching characteristics. [Nov/Dec 2014]
PART B
1. With neat diagram explain the input and output characteristics of common
emitter configuration. [Nov / Dec 2016]
2. Derive the h-parameter for CE. [Nov / Dec 2016]
3. Derive the expression for Gummel Poon model with a neat circuit diagram. [Nov
/ Dec 2016]
4. Explain the input and output characteristics of CB configuration. [Nov / Dec
2016]
5. Draw the CE configuration of NPN transistor and explain its input and output
characteristics with suitable diagram. [May/June 2016]
6. Distinguish between h-parameter and hybrid 𝜋 model. [May/June 2016]
7. The reverse leakage current of the transistor when connected in CB configuration
is 0.2 mA and it is 18µA when same transistor is connected in CE configuration.
Calculate 𝛼 dc and β dc.[ assume IB=30mA]. [May/June 2016]
8. Explain NPN common – emitter configuration and draw a circuit for determining
its input and output characteristics. [ Dec 2015/ Jan 2016]
9. Define α, β, γ of a transistor. Show how they are related with each other. [ Dec
2015/ Jan 2016]
10.Briefly explain CE transistor hybrid 𝜋 model. [ Dec 2015/ Jan 2016]
11.Draw the Ebers-Moll model for NPN transistor and give the equation for emitter
and collector current. [ Dec 2015/ Jan 2016]
12.With relevant expression and figure, explain early effect. [April/ May 2015]
13.Discuss the input and output characteristics of CE configuration. [April/ May
2015]
14.With relevant expressions and sketch, describe h-parameter model. [April/ May
2015]
15.Describe the working of PNP junctions. [April/ May 2015]
16.Define the hybrid parameters for the basic transistor circuit in CE configuration
and give its hybrid model. [Nov / Dec 2014]
17.Write short notes on (i) Early Effect and (ii) Ebers – Moll model for BJT. [Nov /
Dec 2014]
18.Explain the characteristics of BJT in CC, CB, CE configuration and compare the
performance of the transistor in different configurations. [April/ May 2014]
19.Draw the voltage divider bias circuit and derive an expression for its stability
factor. [April/ May 2014]
PART B
PART B
5. What is meant by tunneling? Explain the V-I characteristics of tunnel diode using
energy band diagram. [May/June 2016]
6. Briefly explain the operation of (i) Varactor diode (ii) Laser diode. [May/June
2016]
7. Draw the structure of Metal – semiconductor junction and explain the energy
band structure before and after contact. [Dec 2015/ Jan 2016]
8. Explain the principle behind the LASER diode with a neat sketch. [Dec 2015/
Jan 2016]
9. What is schottky diode? Explain the flow of carriers across its junction during
forward and reverse biased conditions with energy band diagrams. [Dec 2015/
Jan 2016]
10.Explain the principle behind the varactor diode and list out its applications. [Dec
2015/ Jan 2016]
11.Discuss the working of metal – semiconductor junction. [April/May 2015]
Write short notes on (i) Tunnel Diode (ii) Varactor diode. [April/May 2015]
12.Explain the characteristics of zener diode and distinguish between avalanche and
zener breakdown. [Nov/Dec 2014]
Explain the principle and operation of varactor diode. [Nov/Dec 2014]
13.Draw the V-I characteristics of zener diode and explain its operation. [May/June
2014]
14.Write short notes on schottky diode. [May/June 2014]
15.Explain the principle the varactor diode and list out its application. [May/June
2014]
16.Give the details about the LASER diode. [May/June 2014]
PART B
1. Explain the operation and volt ampere characteristics of SCR. [Nov/Dec 2016]
2. Describe the working of phototransistor. [Nov/Dec 2016]
3. Explain the construction and operation of LCD. [Nov/Dec 2016]