AO4614

40V Dual P + N-Channel MOSFET

General Description Product Summary

N-Channel P-Channel
The AO4614 uses advanced trench technology VDS (V) = 40V -40V
MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS = -10V)
charge. The complementary MOSFETs may be used in RDS(ON) RDS(ON)
H-bridge, Inverters and other applications. < 31mΩ (VGS=10V) < 45mΩ (VGS = -10V)
< 45mΩ (VGS=4.5V) < 63mΩ (VGS = -4.5V)

100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

SOIC-8
D2 D1
Top View Bottom View

Top View

S2 D2
G2 D2
S1 D1
G2 G1
G1 D1
S2 S1

Pin1 n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
TA=25°C 6 -5
Continuous Drain TA=70°C 5 -4
Current A TA=85°C ID 4.5 -3.8 A
Pulsed Drain Current B IDM 20 -20
Avalanche Current IAS 12 14
Single Pulse Avalanche Energy L=0.3mH EAS 22 29 mJ
TA=25°C 2 2
W
TA=70°C PD 1.28 1.28
Power Dissipation TA=85°C 1.05 1.05
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State n-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL n-ch 35 50 °C/W
Maximum Junction-to-Ambient A t ≤ 10s p-ch 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State p-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 35 50 °C/W

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AO4614

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 40 V
VDS=32V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.3 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, ID=6A 23.2 31
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 36 48
VGS=4.5V, ID=5A 32.6 45 mΩ
gFS Forward Transconductance VDS=5V, ID=6A 22 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.77 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
ISM Pulsed Body-Diode CurrentB 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 404 500 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 95 120 pF
Crss Reverse Transfer Capacitance 37 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.7 4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8.3 10 nC
Qg(4.5V) Total Gate Charge 4.2 5.1 nC
VGS=10V, VDS=20V, ID=6A
Qgs Gate Source Charge 1.3 2 nC
Qgd Gate Drain Charge 2.3 3 nC
tD(on) Turn-On DelayTime 4.2 5.5 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=3.3Ω, 3.3 4.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15.6 21 ns
tf Turn-Off Fall Time 3 4 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 20.5 27 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 14.5 19 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev9 : June 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4614

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-10mA, VGS=0V -40 V
VDS=-32V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 -1.9 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A
VGS=-10V, ID=-5A 34.7 45
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 52 65
VGS=-4.5V, ID=-2A 50.6 63 mΩ
gFS Forward Transconductance VDS=-5V, ID=-4.8A 12 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.75 -1 V
IS Maximum Body-Diode Continuous Current -2.5 A
B
ISM Pulsed Body-Diode Current -20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 657 870 pF
Coss Output Capacitance VGS=0V, VDS=-20V, f=1MHz 143 200 pF
Crss Reverse Transfer Capacitance 63 110 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6.5 10 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 13.6 17 nC
Qg(4.5V) Total Gate Charge (4.5V) 6.8 8.5 nC
VGS=-10V, VDS=-20V, ID=-5A
Qgs Gate Source Charge 1.8 2.5 nC
Qgd Gate Drain Charge 3.9 5 nC
tD(on) Turn-On DelayTime 7.5 10 ns
tr Turn-On Rise Time VGS=-10V, VDS=-20V, RL=4Ω, 6.7 9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 26 34 ns
tf Turn-Off Fall Time 11.2 15 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 22.3 29 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 15.2 20 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
2
A:T The value of R θJA isinmeasured
A =25°C. The value any givenwith the device
application mounted
depends onon
the1in FR-4
user's board board
specific with 2oz. Copper,
design. The in a still rating
current air environment with
is based on theT A =25°C.
The
t ≤value in any aresistance
10s thermal given application
rating. depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
B:
C.Repetitive rating,
The R θJA is pulse
the sum of width limitedimpedence
the thermal by junction from
temperature.
junction to lead R θJL and lead to ambient.
C.
D. The static characteristics in Figures 1 to 6,12,14 arejunction
The R θJA is the sum of the thermal impedence from obtainedto using
lead R<300
θJL and
µs lead to ambient.
pulses, duty cycle 0.5% max.
D.
E. The static
These characteristics
tests are performed in with
Figures 1 to 6,12,14
the device are obtained
mounted on 1 in 2 FR-4 80 µs with
usingboard pulses,
2oz.duty cyclein0.5%
Copper, max.
a still air environment with
2
E.
T AThese
=25°C.tests
The are
SOAperformed with the
curve provides devicepulse
a single mounted on. 1 in
rating FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA
Rev8curve
: Octprovides
2007 a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30 20
10V 5V
VDS=5V
25 4.5V
15
20
4V
ID (A)

ID(A)
15 10 125°C

10
VGS=3.5V 5 25°C
5

0
0
0 1 2 3 4 5
2 2.5 3 3.5 4 4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

50 1.8
VGS=10V
Normalized On-Resistance

1.6 ID=6A

40
RDS(ON) (mΩ )

VGS=4.5V 1.4 VGS=4.5V

ID=5A
1.2
30
VGS=10V
1

20 0.8
0 5 10 15 20
0 25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

80 1.0E+01
ID=6A
70 1.0E+00

60 125°C
1.0E-01
RDS(ON) (mΩ )

50
IS (A)

125°C 1.0E-02
40
1.0E-03 25°C
30

25°C 1.0E-04
20

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 800
VDS=20V
8 ID= 6A
600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4 Coss
200 Crss
2

0 0
0 2 4 6 8 10 0 10 20 30 40

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
RDS(ON) TJ(Max)=150°C
limited TA=25°C
10µs
30
10.0 100µs
Power (W)
ID (Amps)

10ms 1ms
20
1s
1.0
10s 0.1s 10
TJ(Max)=150°C
TA=25°C DC

0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30 25

-10V -5V VDS=-5V

-4.5V
25
20
-6V -4V
20
15
-ID (A)

-ID(A)
15
-3.5V
10
10 125°C

VGS=-3V 25°C
5 5

0
0
0 1 2 3 4 5
1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

60 1.8
Normalized On-Resistance

55 VGS=-10V
VGS=-4.5V 1.6
ID=-5A
50
RDS(ON) (mΩ )

1.4

45 VGS=-4.5V
1.2 ID=-4A
40
VGS=-10V 1
35
0.8
30 0 25 50 75 100 125 150 175
0 2 4 6 8 10
Temperature (°C)
-ID (A) Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and Temperature
Gate Voltage

160 1.0E+01

140 ID=-5A 1.0E+00

125°C
120 1.0E-01
125°C
RDS(ON) (mΩ )

100
-IS (A)

1.0E-02

80
1.0E-03
60
1.0E-04
25°C
40 25°C
1.0E-05
20
2 3 4 5 6 7 8 9 10 1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1000
VDS=-20V
8 ID=-5A
800
Ciss

Capacitance (pF)
-VGS (Volts)

6 600

4
400
Coss
Crss
2
200

0
0
0 5 10 15
0 10 20 30 40
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C, T A=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 100µs 10µs 30
10.0 limited 1ms
Power (W)
-ID (Amps)

10ms
0.1s 20

1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com