DTM4606

www.din-tek.jp
N- and P-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
• TrenchFET® Power MOSFET
0.015 at V GS = 10 V 6.7 • 100 % Rg Tested
N-Channel 30 5.3 RoHS
0.019 at V GS = 4.5 V 6.2 • 100 % UIS Tested COMPLIANT
0.039 at VGS = - 10 V - 6.0 APPLICATIONS
P-Channel - 30 11.8
0.054 at VGS = - 4.5 V - 5.0 • Backlight Inverter for LCD Display
• Full Bridge Converter
D1 S2
SO-8
S1 1 8 D1

G1 D1 G2
2 7
G1
S2 3 6 D2

G2 4 5 D2

Top View S1 D2
N-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 - 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 6.7 - 6.0
TC = 70 °C 5.4 - 4.7
Continuous Drain Current (TJ = 150 °C) ID
b, c
TA = 25 °C 5.6 - 4.7b, c
TA = 70 °C 4.4b, c - 3.7b, c
Pulsed Drain Current IDM 20 - 20 A
TC = 25 °C 2.5 - 2.5
Source-Drain Current Diode Current IS
TA = 25 °C 1.6b, c - 1.6b, c
Pulsed Source-Drain Current ISM 20 - 20
Single Pulse Avalanche Current IAS 7 - 10
L = 0 1 mH
Single Pulse Avalanche Energy EAS 2.45 5 mJ
TC = 25 °C 3.0 3.1
TC = 70 °C 1.9 2
Maximum Power Dissipation PD W
TA = 25 °C 2.0b, c 2.0b, c
TA = 70 °C 1.25b, c 1.25b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

N-Channel P-Channel
Parameter Symbol Typ. Max. Typ. Max. Unit
Maximum Junction-to-Ambient b, d t ≤ 10 s RthJA 54 64 49 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 42 30 40
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
VGS = 0 V, ID = 250 µA N-Ch 30
Drain-Source Breakdown Voltage VDS V
VGS = 0 V, ID = - 250 µA P-Ch - 30
ID = 250 µA N-Ch 44
VDS Temperature Coefficient ΔVDS/TJ
ID = - 250 µA P-Ch - 42
mV/°C
ID = 250 µA N-Ch - 5.5
VGS(th) Temperature Coefficient ΔVGS(th)/TJ
IID = - 250 µA P-Ch 4.6
VDS = VGS, ID = 250 µA N-Ch 1.4 3.0
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = - 250 µA P-Ch - 1.2 - 2.5
N-Ch 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V nA
P-Ch - 100
VDS = 30 V, VGS = 0 V N-Ch 1
VDS = - 30 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10
VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10
VDS = 5 V, VGS = 10 V N-Ch 10
On-State Drain Currentb ID(on) A
VDS = - 5 V, VGS = - 10 V P-Ch - 10
VGS = 10 V, ID = 3 A N-Ch 0.015 0.018
VGS = - 10 V, ID = - 3 A P-Ch 0.039 0.047
Drain-Source On-State Resistanceb RDS(on) Ω
VGS = 4.5 V, ID = 2 A N-Ch 0.019 0.023
VGS = - 4.5 V, ID = - 2 A P-Ch 0.054 0.057
VDS = 15 V, ID = 5 A N-Ch 22
Forward Transconductanceb gfs S
VDS = - 15 V, ID = - 5 A P-Ch 14
Dynamica
N-Ch 640
Input Capacitance Ciss N-Channel P-Ch 970
VDS = 20 V, VGS = 0 V, f = 1 MHz
N-Ch 73
Output Capacitance Coss pF
P-Ch 120
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 41
Reverse Transfer Capacitance Crss
P-Ch 95
VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 11.7 20
VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 25 38
Total Gate Charge Qg
N-Ch 5.3 9
N-Channel P-Ch 11.8 18
VDS = 20 V, VGS = 4.5 V ID = 5 A nC
N-Ch 1.9
Gate-Source Charge Qgs
P-Channel P-Ch 3.0
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A N-Ch 1.7
Gate-Drain Charge Qgd
P-Ch 5.2
N-Ch 0.5 2.2 4.5
Gate Resistance Rg f = 1 MHz Ω
P-Ch 1.0 5.5 11

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
a
Dynamic
N-Ch 7 14
Turn-On Delay Time td(on) N-Channel P-Ch 7 14
VDD = 20 V, RL = 4 Ω
N-Ch 10 20
Rise Time tr ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
P-Ch 12 24
P-Channel N-Ch 15 30
Turn-Off Delay Time td(off)
VDD = - 20 V, RL = 4 Ω P-Ch 30 60

tf ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 9 18
Fall Time
P-Ch 9 18
ns
N-Ch 16 30
Turn-On Delay Time td(on) N-Channel P-Ch 44 80
VDD = 20 V, RL = 4 Ω
N-Ch 17 30
Rise Time tr ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
P-Ch 33 50
N-Ch 16 30
Turn-Off Delay Time td(off) P-Channel
VDD = - 20 V, RL = 4 Ω P-Ch 28 60

tf ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 10 20

Fall Time
P-Ch 13 25
Drain-Source Body Diode Characteristics
N-Ch 2.5
Continuous Source-Drain Diode Current IS TC = 25 °C
P-Ch - 2.5
A
N-Ch 20
Pulse Diode Forward Currenta ISM
P-Ch - 20
IS = 1.6 A N-Ch 0.78 1.2
Body Diode Voltage VSD V
IS = - 1.6 A P-Ch - 0.76 - 1.2
N-Ch 19 30
Body Diode Reverse Recovery Time trr ns
P-Ch 26 50
N-Channel N-Ch 14 25
Body Diode Reverse Recovery Charge Qrr IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C nC
P-Ch 18.5 35
N-Ch 13
Reverse Recovery Fall Time ta P-Channel
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C P-Ch 12.5
ns
N-Ch 6
Reverse Recovery Rise Time tb
P-Ch 13.5
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30 5
VGS = 10 thru 5 V

4V
24 4
I D - Drain Current (A)

I D - Drain Current (A)

18 3
TC = 25 °C

12 2

6 1
3V TC = 125 °C

TC = - 55 °C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.035 800

Ciss
0.030 640
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)

0.025 480

VGS = 4.5 V
0.020 320
VGS = 10 V Coss

0.015 160

Crss
0.010 0
0 6 12 18 24 30 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8

ID = 5 A VDS = 10 V ID = 5 A VGS = 10 V
1.6
VGS - Gate-to-Source Voltage (V)

8
R DS(on) - On-Resistance

VDS = 20 V 1.4
(Normalized)

6
VGS = 4.5 V
VDS = 30 V 1.2

4
1.0

2
0.8

0 0.6
0.0 2.5 5.0 7.5 10.0 12.5 - 50 - 25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Qg - Total Gate Charge (nC)
Gate Charge On-Resistance vs. Junction Temperature

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100 0.20

ID = 5 A
TJ = 150 °C
10 0.16

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 25 °C
1 0.12

0.1 0.08
TA = 125 °C

0.01 0.04

TA = 25 °C
0.001 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4 80

0.2 ID = 250 µA
64
V GS(th) Variance (V)

0.0 ID = 5 mA
Power (W)

48

- 0.2

32
- 0.4

16
- 0.6

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by R DS(on)*
10
1 ms
I D - Drain Current (A)

1
10 ms

100 ms
0.1
1s
10 s
TA = 25 °C DC
Single Pulse
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

I D - Drain Current (A)

5

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

4.0 1.5

3.2 1.2

2.4 0.9
Power (W)
Power (W)

1.6 0.6

0.8 0.3

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
0.05 PDM

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 5

VGS = 10 thru 5 V
24 4
VGS = 4 V
I D - Drain Current (A)

I D - Drain Current (A)

18 3

12 2

TC = 25 °C
6 VGS = 3 V 1
TC = 125 °C
TC = - 55 °C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.10 1600

0.08 1280
R DS(on) - On-Resistance (Ω)

Ciss
C - Capacitance (pF)

0.06 VGS = 4.5 V 960

VGS = 10 V
0.04 640
Coss

0.02 320
Crss

0.00 0
0 6 12 18 24 30 0.0 2.4 4.8 7.2 9.6 12.0

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8

ID = 5 A ID = 5 A
VDS = 20 V 1.6
VGS - Gate-to-Source Voltage (V)

8
VGS = 10 V
R DS(on) - On-Resistance

VDS = 10 V 1.4
(Normalized)

VDS = 30 V 1.2 VGS = 4.5 V

4
1.0

2
0.8

0 0.6
0.0 5.1 10.2 15.3 20.4 25.5 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.20
ID = 5 A

10 0.16

R DS(on) - On-Resistance (Ω)

TJ = 150 °C
I S - Source Current (A)

1 TJ = 25 °C 0.12

0.1 0.08 TJ = 125 °C

0.01 0.04
TJ = 25 °C

0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.8 50

0.6
40
ID = 250 µA
VGS(th) Variance (V)

0.4
Power (W)

30
0.2 ID = 1 mA

20
0.0

- 0.2 10

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C)
Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

10
Limited by RDS(on)*
I D - Drain Current (A)

1 ms
1
10 ms

100 ms
0.1
10 s
1s
TC = 25 °C DC
Single Pulse
0.01
0.01 0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

7.0

5.6

I D - Drain Current (A)

4.2

2.8

1.4

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

4.0 1.5

3.2 1.2
Power (W)

2.4 0.9
Power (W)

1.6 0.6

0.8 0.3

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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 Package Information
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SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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