N-CHANNEL IRF840/841 POWER MOSFETS FEATURES + Lower Rosior + Improved inductive ruggedness + Fast switching times + Rugged polysilicon gate cell structure + Lower input capacitance + Extended safe operating area + Improved high temperature reliability 1.Gate 2, Drain 3 Source PRODUCT SUMMARY PartNumber | Vos | Rosia | Io IRF840 soov | casa | 80a Ga) asov_ | oasn | 80a ABSOLUTE MAXIMUM RATINGS (Characteristic Symbol 1RFe4O TRFEAt Unit Drain-Source Voltage (1) Voss Drain-Gate Vottage (Rs=1.0M0 it) ‘Voor Gate-Source Votage Vos 120 Vac Continuous Drain Curent To=25 to 80 Continuous Drain Gurrent To=100 °C 10 50 Drain Current - Pulsed (3) tom Gate Current - Pulsed tow 215 Bs as 8\8 ‘Single Pulsed Avalanche Energy (8) 510 ‘Avalanche Current 80 ‘Total Power Dissipation @ To=25 °C 125 Watts Dorate above 25°C oe 10 wre ‘Operating and Storage ~ Junction Temperature Range ‘Maximum Lead Temp. for Soldering Purposes, 1/8* from case for 5 seconds Ts, Tors 8510 +150 1h 300 c Notes : (1) Ts=25°C to 150°C @) Pulse test: Pulse width <300us, Duty Cycle<2% {@) Repetitive rating : Pulse width limited by max. junction temperature (4) L=t.4ml, Vao=S0V, Ra=250 , Starting T)=25°C. 322 an mm 7464142 0028236 135 mm FlerrmamicsN-CHANNEL IRF840/841 POWER MOSFETS _——— ee ELECTRICAL CHARACTERISTICS (1c=25'c unless otherwise specitied) ‘Symbol | Characteristic Min | Typ | Max | Units: Test Conditions Drain-Source Breakdown Votage Boss | IRFE40 soo} - V_ | Ves=0¥, o=2501 Feat aso| - | - |v Vesen | Gate Threshold Votage 20| = | 40 | v | vosevas,=250a z 1oss_| Gate-Source Leakage Forward =| = [100 | na | ves=zov Igss_| Gate-Source Leakage Reverse : >| -100 | nA | Vas=-20v, toss. | Zero Gate Vottage Drain Curent = |= [50 [oA | Voss Max. Rating, Vos=0¥ = [= | 1000 [a |"Y0s=0.8 Max. Rating, Vas, To=125°C. Rosy | Static Drakt- Source On a aa - | 085 | 0 | vos=10%,1o=4.0 Qh | Forward Transconductance (2) 40] 6s] - | Vos210V, lo=4.0A_ 7 Ges_| input Capacitance = [1510] | oF Coss_| Outout Capacitance =| a5 [ = Tp | voseov, vose2sv, fot owe Cow _| Reverse Transfer Capacitance - | 6] - | oF tajon)_|_Turn-On Delay Time + | 14] 21 | ns | voo=08 BV0ss, 1o=8.0A, Z0-9.10 t Rise Time = | 23 | 35 | ns | (MOSFET switching times are essentially tem _| Turn-Otf Delay Time + | 49 | 74 | ns | independent of operating temperature) t_| Fattime ~ | | 90 | ns 05 | Total Gate Charge ~ | = | 74] nc | vos=t0y,0=8.04, vos=0.8 Max. Rating (Gate-Souce Plus Gate-Drain) (Gate charge i essontialy independent ot se | Gate-Source Charge = | 90 | — [re | operating temperature) Op: _| Gate-Drain (Miter) Charge = [zal = [ne THERMAL RESISTANCE ‘Symbol | Characteristics I all Units: ‘Remark Reuc | Junction-to-Case MAX 10 KW = Recs | Case-to-Sink a |Tv) Os KW | Mounting surtace flat, semoath, and greased [Rese | Junction to-Ambient MAX 5 Kw | Free Air Operation Notes : (1) Ts=25°C to 180°C (2) Pulse test : Pulse width<300us, Duty Cycle <2% {@) Repetitive rating : Pulse width limited by max. junction temperature MB 79b4L42 0026237 O7) ELECTRONICSN-CHANNEL IRF840/841 POWER MOSFETS bo eee SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS symbol] Characteristic Min | typ | Max [units “Test Conditions vg | Contuoue Soca Curent a(R (Body Diode), symbol showing the vou | Pte Source Curent Tw | a | tggaevese aaa PN junction rection Vi>_| Diode Forward Votage 2) = [= [20 |v | ri28'o, 8.08, ves=ov te _| averse Recovery Time = [480 | 970 | Notes: (1) Ti=25°C to 150°C (2) Pulse test: Pulse width < 300s, Duty Cycle<2% {@) Repetitive rating : Pulse width limited by max. junction temperature Tse25°C, l=8.0A, ce/t=1008/S vo, DRAM cunnenT (AMPERES) lo, ORAIN CURRENT AMPERES) ‘oe: ORANTO-SOURCE VOLTAGE (VOLTS) vey. GATETO-SOUNCE VOLTAGE (VOLTS) ‘Typlal Output Characteristics ‘Type! Transtor Characteristics | i crema ns Ame [ = f He E i 8 i | vaseesv 5 7 ro 5 Veg, ounsrosounce vourace wours) 178 oe onan to ounce vOLTAGE WOLTS) “pla! Setration Cheectrotes "Maximum Sate Operating Area Mi 7964142 0026236 TOS ELECTRONICS