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In this chapter, EMC measures when IGBT module is applied are introduced.
Recently EMC measures coping with European CE Marking and Japanese VCCI(Voluntary Control
Council for Information Technology Equipment) standards are indispensable in designing power electronic
equipments such as Power Drive System(PDS) and Uninterruptible Power Source(UPS) using IGBT
modules.
EMC is Electro Magnetic Compatibility, which is classified into EMI (Electro Magnetic Interference) and
EMS (Electro Magnetic Susceptibility). EMI is adverse effects of electronic devices on peripheral
equipments, and it is also called Emission. There are two kinds of EMI, one is conducted emission which
leaks to power line and the other is radiated emission radiated as electromagnetic wave. EMS means
immunity performance of electronic devices against disturbance, such as electromagnetic wave, voltage
sag, electrostatic discharge, EFT/burst and lightning surge from the surrounding and it is also called
Immunity. These are simplified as shown in Fig.10-1.
Since IGBT modules turn on and off several hundreds of voltage and several hundreds of current in
several hundreds nanoseconds, both conducted emission and radiated emission are easily generated due
to high dv/dt and di/dt of IGBT module. It is important to reduce those emissions when designing power
electronics equipments.
In this chapter, effects of switching on others (EMI characteristics), which tend to become troubles in the
application of the IGBT module, and countermeasures are introduced.
10-1
Chapter 10 EMC Design of IGBT Module
Conducted emission
EMI
Radiated emission
Frequency [MHz]
Fig.10-2 Limits of Conducted Emissions in IEC61800-3
10-2
Chapter 10 EMC Design of IGBT Module
Frequency [MHz]
Fig.10-3 Limits of Radiated Emissions in IEC61800-3
Category C1 Category C2
10-3
Chapter 10 EMC Design of IGBT Module
Inverter
Motor
Load
On the other hand, the common mode noise is generated by potential fluctuation against ground due to
charge and discharge of stray capacitance existing between main circuit and ground and in the transformer,
and noise current is propagated through the ground line. The path of common mode noise is shown in Fig.
10-6.
Inverter
Motor
Load
With actual equipment, there is impedance imbalance in the wirings of phases (e.g. R/S/T phase), and so
the normal mode noise is changed to the common mode noise via the ground line (Fig. 10-7) or reversely
the common mode noise is changed to the normal mode noise. In actual noise spectrum, therefore, it is
very difficult to separate the noise through the normal mode path and the noise through the common mode
path. As general caution, it is necessary to prevent the imbalance as much as possible for the phase
wirings.
10-4
Chapter 10 EMC Design of IGBT Module
Potential difference
Phase
B Noise changed to
Floating capacity common mode
Ground line
10-5
Chapter 10 EMC Design of IGBT Module
Such filters as described above to be installed outside the PDS are effective for noise control in the bands
of 100kHz to several MHz, but may be less or not effective for higher bands (conducted emissions of
10MHz or higher and radiated emissions of 30MHz or higher).
This is because the frequency characteristics of filters are limited, and in order to effectively control
emissions over a wide range of frequency, it is necessary to install optimum filters to meet the
respective frequency.
One of factors to cause emission near the range of 10MHz to 50MHz is wiring inductance and/or stray
capacitance around the IGBT module in the PDS, and it is considered that resonance occurs accompanying
switching. In this section, the mechanism of emissions occurring around the IGBT and the countermeasures
are introduced.
10-6
Chapter 10 EMC Design of IGBT Module
Fig. 10-9 shows the block diagram of a typical power drive system. In this figure, AC power source is
rectified into DC by rectifier diodes and then reversely converted into AC by switching at high frequency the
IGBT of the inverter portion, thereby achieving variable speed driving of the motor. The IGBT module and
rectifier diode are mounted on a cooling fin, and this cooling fin is a part of a PDS body and is normally
grounded for safety.
PDS
Converter Inverter
Snubber
Motor
Load
Insulated
substrate
Cooling fin
In this system , the metal base of IGBT module mounted on a cooling fin and the electric circuit side such
as IGBT chip are insulated each other by a highly thermal conductive substrate. (For the detailed structure
of the module interior, see Chapter 1)
A snubber capacitor which suppresses surge voltage is connected to the IGBT of the inverter portion.
In the area of MHz order such as radiated and conducted emission, however, the wiring inductance, stray
capacitor which are not appeared on circuit diagram may give large effects.
Fig. 10-10 shows a schematic diagram of PDS in such high-frequency bands as hundreds of kHz to tens
of MHz. At a high frequency, stray capacitance and stray inductance existing in IGBT module and electrical
parts give a very large effect. On the wiring around IGBT module, tens to hundreds nano henry of stray
inductance may exist, and on the insulating substrate described above, hundreds pico farad of stray
capacitance exists. There exists Junction capacitance at the PN junction of the IGBT itself.
Cooling fin
10-7
Chapter 10 EMC Design of IGBT Module
Assuming, for example, that the stray inductance of the wiring is 200nH and the stray capacitance of the
substrate is 500pF, and if they are looped, the resonance frequency fo of the loop is calculated as Fig.
10-11.
1 1
fo ≒16MHz
2π LC 2π 200nH 500pF
If switching of IGBT becomes a trigger and the resonant current of 16MHz flows in the loop, the
resonant current will generate conducted emission and radiated emissions. In the case shown in Fig. 10-10
common mode noise current of 16MHz via the insulated substrate of IGBT module flows out to the ground
line, and it is propagated to the input power line and appears as the peak of conducted emissions. If this
resonance frequency becomes 30MHz or higher, it is observed as radiated emissions.
Table 10-1 shows an example of stray capacitance and inductance values of circuit components.
Table 10-1 Example of stray Capacitance and Inductance values in components of PDS
Stray
Circuit Components Stray Inductance Remarks
Capacitance
Between P and N terminals
20~40nH
of IGBT module
IGBT chip 100~200pF Voltage dependency is large
Snubber capacitor 20~40nH
Insulated substrate 500~1,000pF
Between internal electrode
Electrolytic capacitor 100pF
and mounting metallic band
At several MHz or higher a
Iron-core reactor 50~200pF
reactor works as a capacitor.
The higher voltage resistance
Varister 100~200pF
is, the smaller stray C is.
Example of 3-phase 15kW
Motor 13,000pF
induction motor
Hundreds of Hundreds of nH
Shielded 4-core cable Per meter
pF ~several micro H
Wiring busbar Hundreds of nH About 100nH per 10cm
In an actual system, these components are connected in a complicated way, and an unintended L-C
resonance circuit will be formed. Due to the IGBT switching, resonance current will be occurred in the L-C
circuit and will generate peak value of conducted emission and radiated emission.
10-8
Chapter 10 EMC Design of IGBT Module
Table 10-2 and Fig. 10-12 show resonance loops that tend to cause the peaks in the conducted and
radiated emissions.
The wire length (inductance) and stray capacitance vary depending on the system configuration, but
approximate resonance frequency can be estimated by roughly calculating inherent stray L and C values in
a subject system.
10-9
Chapter 10 EMC Design of IGBT Module
120
Emission[dBuV]
100
ConductedEmission
80 IEC61800-3
(Category C3)
Conducted
60
40
0.1 1 10 100
周波数[MHz][Hz]
Frequency
Device
difference
R G value
difference
10-10
Chapter 10 EMC Design of IGBT Module
Fig. 10-15 shows measurement results of radiated emissions (30MHz ~). Like the conducted emissions,
the radiated emissions become the highest near 30MHz, which is the lowest frequency of the standard, and
tend to attenuate as the frequency becomes higher. As shown in Fig. 10-15, the noise spectrum due to
switching of IGBT does not have a sharp peak such as the CPU clock but a relatively broad.
60
Emission [dBuV/m]
50
Feild Strength[dBuV/m]
40
30
Conducted
20
10
30 40 50 60 70 80 90 100
Frequency [Hz]
周波数[MHz]
10-11
Chapter 10 EMC Design of IGBT Module
Frequency [MHz]
Fig.10-16 Measurement Results of Conducted Emissions in 3-Phase PDS 200V/37kW (QP Value)
LC filter
Converter
Gain
Attenuation
characteristic of Ideal attenuation
actual filter characteristic
10-12
Chapter 10 EMC Design of IGBT Module
As one factor of the peak appearing in the band of 10MHz or higher of the conducted emissions,
described in the preceding section, the resonance via the insulating substrate of the IGBT module can be
cited.
Assuming, for example, that stray capacitance of the insulating substrate and stray inductance of main
circuit are such values as shown in Fig. 10-11, the peak value of conducted emissions appears at 16MHz.
The LC values of a loop that resonates with the frequency of 10MHz or higher are in the order of hundreds
of pF and hundreds of nH, and the causes may be the capacitance of IGBT chip, insulating substrate
capacitance and wiring inductance inside the package.
Fig. 10-18 shows an example of common mode circuit model of resonance via the DBC (Direct Bonding
Cupper) substrate.
W iring inductance
Inverter side DBC
substrate capacitance
Line
impedance
stabilization
network
(LISN)
dV/dt of
IGBT
This shows the resonance between the inductance of capacitor connected as an input filter and the
substrate capacitance of inverter side module and the resonance between converter and inverter modules.
When the filter or varistor is added to prevent emissions, it should be noted that the peak may appear due
to the resonance with the parasitic L/C of the filter.
10-13
Chapter 10 EMC Design of IGBT Module
Frequency [MHz]
Fig.10-19 Measurement of Conducted Emissions of 7MBR75U4B120
Even if the gate resistance is increased to 2 times or more, the reducing effect is smaller, and so it is
necessary to judge the reducing effect considering the demerit of increased switching loss.
10-14
Chapter 10 EMC Design of IGBT Module
L [uH]
R []
Frequency [MHz]
Fig.10-21 Impedance (L, R) Characteristics of Ferrite Core
If this ferrite core is inserted in the resonance loop to produce the noise peak described above, the
following circuit model is made.
dV/dt of IGBT
Input filter
By selecting a ferrite core material with optimum impedance characteristic in accordance with the
constant (resonance frequency) of the loop, it becomes possible to control the noise peak by damping the
resonance.
10-15
Chapter 10 EMC Design of IGBT Module
Fig. 10-23 shows the impedance characteristic of the resonance loop before and after the core measure
is taken. At the resonance point, the impedance becomes the lowest and large resonance current runs, and
so the peak occurs in the conducted emissions. By inserting the core here, the impedance is increased, and
by damping the resonance, the conducted emissions can be effectively controlled.
Fig. 10-24 and Fig. 10-25 show an example of inserting the common mode/ferrite core in the PDS main
circuit and reducing effects, respectively.
Since the loop impedance when no measure is taken is about 8Ω, peak reduction of about 10dB can be
achieved by increasing it to about 30Ω by means of the ferrite core.
Unlike the gate resistance method, applying the core can reduce the emissions without increasing the
loss of IGBT. In Fuji’s 5th generation IGBT modules, U4 series, the tradeoff between high-speed switching
and low-noise characteristic is greatly improved when a core is applied. Furthermore, lower noise of
equipment can be achieved without sacrificing the high-speed switching characteristic by arranging the
ferrite core effectively. (Various patents are applied)
100
Converter Inverter
with core
Snubber
Z [Ω]
コアあり
10
1 Ferrite core
コアなし
without core
1M 10M
f [ Hz ]
Fig.10-23 Impedance Characteristic of Fig.10-24 Example of Measure by means of Common
Resonance Loop before and after
Conducted Emission [dBuV]
Without core
Frequency [MHz]
10-16
Chapter 10 EMC Design of IGBT Module
1.32 10 -14
Ef = S If sin θ
(1)
r
E
If = (2)
Z
In order to reduce the radiated emissions, therefore, the following measures may be considered.
[1] Increasing the distance from the loop
[2] Decreasing the loop area S
[3] Decreasing the loop current [3]a Decreasing the spectrum of switching voltage
[3]b Increasing the loop impedance
As for [1], the measurement at the distance of 10m or 3m is specified in the standard, and therefore,
realistic measures are [2] or [3].
10-17
Chapter 10 EMC Design of IGBT Module
small
large
Conventionally, the method to make the rise time tr slower by increasing the gate resistance has been
generally applied, and this means to make lower frequency of f2 in Fig. 10-27 and reduce the spectrum of
30MHz or higher. In comparison with the voltage component E(1) at 30MHz when RG is small and the
voltage rise and fall time are short (dV/dt is large), the voltage component when RG is large and dV/dt is
small becomes smaller like E(2).
Since E(1), E(2) is equivalent to E in Formula (2), reducing the dV/dt means to control the noise current If
consequently.
Fig. 10-28 shows the dependency on gate resistance of the radiated emissions of 7MBR100U4B-120. By
approximately doubling the standard resistance, the radiated emissions can be greatly controlled. Thus, the
radiated emissions can be easily controlled by adjusting the gate resistance for U4 series, and the emission
and loss are balanced well.
10-18
Chapter 10 EMC Design of IGBT Module
3.1.5 Summary
As described above, the EMI (especially the peak value of high-frequency conducted emission at not less
than 10MHz and radiated emission) produced by IGBT switching is generated by the resonance of stray L
and C existing in the IGBT itself and on its peripheral circuit. These stray L and C components cannot be
reduced to zero in principle and physically. As the measures against the emissions, therefore, it is important
to accurately discover the resonance of the loop to be the problem and take proper measures.
10-19
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