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acknowledgments
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outline
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graphene
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objectives
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outline
6
simplified graphene bandstructure
We will use a very simple description of the graphene bandstructure,
which is a good approximation near the Fermi level.
E (k )
E (k ) =
± υ F k =
± υ F k x2 + k y2
υ ( k )= υ F ≈ 1×1 80cm/s
gV = 2
f1 (E ) EF
D( E ) = 2 E π 2υ F2
k
“neutral point”
(“Dirac point”) We will refer to the EF > 0 case, as
“n-type graphene” and to the EF < 0
case as “p-type graphene.”
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low-bias transport theory
0V W I V
f1 (E ) f2 (E )
graphene
EF 1 EF 2 = EF 1 − qV
I=
2q
+∞
∫ T (E )M (E )( f1 − f2 )dE
f0 ( = (
E ) 1 1 + e(
E − EF ) k B T
)
h −∞
2 +∞
T ( E ) ≡ λ (E ) (λ (E ) + L)
I 2q
G=
V
=
h ∫ T ( E )M ( E ) ( − ∂f 0 ∂E ) dE
−∞ M ( E ) = W 2 E π υ F
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expected results: G vs. EF at TL = 0K
G vs. EF
E M (E ) ∝ E
EF > 0
EF = 0
T (EF ) ≈ constant M (E )
EF
∂f (E ) EF < 0
− 0 = δ (E − EF )
∂E
2q 2
G ( 0K ) = T ( EF ) M ( EF )
h
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expected results: G vs. nS at TL = 0K
2q 2
G= T ( EF ) M ( EF )
G vs. EF h
2
vs. nS 1 EF
nS ( EF )
= ∝ E 2
π υ F F
M (EF ) ∝ EF ∝ nS
T (EF ) ≈ constant
nS
G ∝ nS
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expected results: TL > 0K
T > 0K G E M (E ) ∝ E
EF > 0
EF = 0
M (E )
T = 0K
EF
EF < 0
GS (EF = 0 ) > 0
2q2
G (TL > 0 K ) = T ( EF ) M ( EF )
h 11
some key equations (T = 0K)
2q 2 λ ( EF ) 2 EF
G ( 0K ) = W
h λ ( EF ) + L π υ F
2q 2 k BTL 2q 2 2 EF
GS ( EF ) 2 2 λapp F 0 ( EF k BTL ) ≈ λapp ( EF )
π υ F h π υ F
2 2
2 k BTL 1 EF
nS 1( F B L)
F E k T ≈
π
F υ π
Fυ
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questions
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outline
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gate-modulated conductance in graphene
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experimental structure (2-probe)
(4-probe is used to eliminate series resistance and for Hall effect measurements.
graphene
W, L, ~ microns
SiO2
L
Back gate W graphene
(doped Si)
SiO2
graphene
SiO2
“Temperature-Dependent Transport in
Side view
Suspended Graphene”
K. Bolotin, et al., Phys. Rev. Lett. 101,
096802 (2008)
18
measurements
− V + I
G=I V R=V I
graphene
SiO2
At a fixed temperature:
G (TL ) or R(TL )
VG
Frequently the sheet conductance or sheet resistance is reported
(and this is usually referred to as the ‘conductivity’ or the ‘resistivity.’)
G = GS (W L) 19 R = RS (L W )
using a gate voltage to change the Dirac point (or EF)
∆V I E (k )
graphene
SiO2
VG′ > 0
Back gate
VG′ = 0
(doped Si) k
VG′ < 0
VG
VG′ = VG − VNP
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gate voltage - carrier density relation
nS (pS )
VG′ = VG − VNP VG
qnS = CinsVG′
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outline
22
sheet conductance vs. VG
G = GS W L
1 µm
2q 2 2 EF
GS ( EF ) ≈ λapp ( EF )
↑ h π υ F
L ≈ 5000 nm
GS t ox = 300 nm 2
1 EF
mS =
nS CoxVG ≈
B= 0 T = 10 K π υ F
VG (V ) → λapp ( EF ) =
GS ( 2q h )
2
2 nS π
Fig. 30 in A. H. Castro, et al.,“The electronic
properties of graphene,” Rev. of Mod. Phys.,
81, 109, 2009.
23 (T L
=0K )
mean-free-path (VG = 100V)
1 µm GS ≈ 3.0 mS
nS ≈ 7.1 × 1012 cm -2
↑
L ≈ 5000 nm
GS t ox = 300 nm E F ≈ 0.3 eV
mS
B= 0 T = 10 K
λapp (0.3 eV )≈ 130 nm
VG (V ) →
λ (0.3 eV )<< L
Fig. 30 in A. H. Castro, et al.,“The
electronic properties of graphene,”
Rev. of Mod. Phys., 81, 109, 2009.
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mean-free-path (VG = 50V)
GS ≈ 1.5 mS
1 µm
nS ≈ 3.6 × 1012 cm -2
↑ E F ≈ 0.2 eV
L ≈ 5000 nm
GS t ox = 300 nm
mS λapp (0.2 eV )≈ 90 nm
B= 0 T = 10 K
λ (0.2 eV )
≈ 0.69
VG (V ) →
λ (0.3 eV )
0.2 eV
Fig. 30 in A. H. Castro, et al.,“The ≈ 0.67
electronic properties of graphene,” 0.3 eV
λ (E F )∝ E F
Rev. of Mod. Phys., 81, 109, 2009.
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mobility
GS ≡ nS qµ n
↑
GS
and deduce a mobility:
mS
B= 0 T = 10 K
µ n ≈ 12,500 cm 2 /V-sec
VG (V ) →
Mobility is constant, but mean-
free-path depends on the Fermi
Fig. 30 in A. H. Castro, et al.,“The energy (or nS).
electronic properties of graphene,”
Rev. of Mod. Phys., 81, 109, 2009.
26
VG = 0
1 µm
GS ≈ 0.16 mS
↑
L ≈ 5000 nm
GS t ox = 300 nm nS = CoxVG ≈ 0 ?
mS
B= 0 T = 10 K GS
λapp =
( 2q 2 h ) 2 nS π
VG (V ) →
λapp → ∞ ?
Fig. 30 in A. H. Castro, et al.,“The
electronic properties of graphene,”
(T )
Rev. of Mod. Phys., 81, 109, 2009.
=0K
27 L
electron-hole puddles
GS 1 µm
1/kΩ
B= 0 T = 10 K
VG (V ) →
↑
GS
2q 2 As doping increases, GS
vs. nS becomes more linear,
h
mobility decreases, and the
NP shifts to the left.
VG (V ) →
t ox = 300 nm
λ << L
λapp =
GS (2q h)≈ 164 nm
2
T = 20 K
2 nS π
λ << L
VG (V ) →
TL < 100 K : RS ∝ TL
(acoustic phonon scattering - intrinsic)
hω
T
L > 100 K : RS ∝ e 0 kBTL
J.-H. Chen, J. Chuan, X. Shudong, M. Ishigami, and M.S. Fuhrer, “Intrinsic and extrinsic
performance limits of graphene devices on SiO2,” Nature Nanotechnology, 3, pp. 206-209,
2008. 31
phonons and temperature dependence
1 1 1
RS = ∝ ∝ Nβ Nβ =
GS λ e ω ( β ) kBTL − 1
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unannealed vs. annealed suspended graphene
GS ∝ nS
λapp ≈ 1300 nm
expected from
ballistic theory
T = 40 K
GS = nS qµ n + Gres
K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, and
P. Kim, “Temperature dependent transport in
suspended graphene,” 2008 33
about mobility
2q 2 2 EF
GS ( EF ) ≈ λapp ( EF )
h π υ F
( )
GS (E F ) ∝ λapp E F nS
Case 1): Case 2):
GS ≡ nS qµ n
λapp ∝ E F ∝ nS λapp constant
λapp (E F ) GS ∝ nS GS ∝ nS
µn ∝
nS
µ n constant µn ∝ 1 nS
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experimental summary: graphene on SiO2
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experimental summary: suspended graphene
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outline
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conductance and scattering
2q 2 λ ( EF ) 2 EF
G ( 0K ) = W
h λ ( EF ) + L π υ F
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scattering
k′, E ′ 1 scattering rate per sec
τ (E )
typically computed from
FGR
k, E
y US ( ρ )
λ (E ) ∝ υ F τ (E )
x mean-free-path for backscattering
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scattering
π
λ (E ) = υ F τ m (E ) (elastic or isotropic scattering)
2
1
∝ D (E ) ∝ E τ (E ) ∝ E −1
τ (E )
λ (E ) ∝ 1 E
2q 2 2 EF
GS = λ ( EF ) λ ( EF ) ∝ 1 EF
h π υ F
GS = constant!
N.H. Shon and T. Ando, J. Phys. Soc. Japan, 67, 2421, 1998.
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long range (charged impurity) scattering
E λ ↑ as E ↑
W, L, ~ microns
graphene
ENP (x) = U S (x)
x
SiO2
2q 2 2 EF
GS = λ ( EF ) λ (EF ) ∝ EF
h π υ F
GS ∝ nS (µn constant )
2
2 EF GS (Vg ) ( 2q 2 h )
GS ( 0K ) =
2q
λapp ( EF ) λapp ( EF ) =
h π υ F 2 nS (Vg ) π
2
1 EF
nS ( 0K ) = =
1 1
+
1
π υ F λapp ( EF ) λ ( EF ) L
TL = 40K
“Temperature-Dependent Transport in
Suspended Graphene”
K. Bolotin, et al., Phys. Rev. Lett. 101,
096802 (2008)
46
suspended, annealed
TL = 40K
“Temperature-Dependent Transport in
Suspended Graphene”
apparent mfp apparent mfp
K. Bolotin, et al., Phys. Rev. Lett. 101, increases with independent of
096802 (2008) energy energy -
approximately L
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suspended, annealed
1 1 1 λ (EF )
= +
λapp (EF ) λ (EF ) L
(data from: K. Bolotin, et al., Phys. Rev. Lett. 101, 096802, 2008)
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suspended, unannealed
linear GS vs. n suggests charged
impurity scattering.
Expect ~λ |E|
T = 40 K
analysis complicated by
large residual resistance.
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minimum and residual conductance
Gres ≈ Gmin
Gmin
T = 40 K
q2
Gres ≈ 14 G (nS ) = Gres + (qµ1 )nS
h
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suspended, unannealed
~ |E|
as expected
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general picture of GS vs. nS (ballistic)
ballistic
G ∝ nS
nS
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general picture of GS vs. nS (diffusive)
Charged-impurity
Short range or ballistic (long-range)
acoustic phonon G scattering.
scattering. ∝ nS
Constant mobility.
Result is a combination
of charged impurity and
phonon scattering.
nS
Non-zero residual resistance
commonly observed.
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outline
54
summary
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what about the contacts?
− V + I
graphene
SiO2
Back gate
(doped Si)
VG
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suspended, unannealed
linear GS vs. n suggests charged
impurity scattering.
Expect ~λ |E|
T = 40 K
analysis complicated by
large residual resistance.
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