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EE‐606: Solid State Devices
EE‐606: Solid State Devices
Lecture 12: Equilibrium Concentrations
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Carrier concentration
C i t ti
2) Temperature dependence of carrier concentration
3) Multiple doping, co‐doping, and heavy‐doping
4) Conclusion

Ref.  ADF Chapter 4, pages 118‐128

Alam  ECE‐606 S09 2
 Carrier‐density with Uniform Doping
A bulk material must be charge neutral over all …

∫⎣
⎡ ⎤
+ −
p − n + N D + N A ⎦dV = 0

Further if the doping is spatially homogenous

p − n + N D+ + N A− = 0
FD integral vs. FD function ?

2 2 ND NA
NV F1 2 ⎡⎣ β ( EF − EV ) ⎤⎦ − N A F1 2 ⎡⎣ β ( EC − EF ) ⎤⎦ + − =0
π π 1 + 2e β ( EF − ED ) 1 + 4e β ( EA − EF )

ND NA
NV e −( EF − EV ) / kBT − N Ae −( EC − EF ) / kBT + − =0 (approx.)
1 + 2e( EF − ED ) / kBT 1 + 4e( EA − EF ) / kBT

Once you know EF, you can calculate n, p, ND+, NA-.

Alam  ECE‐606 S09 3
 Intrinsic Concentration

p − n + N D+ + N A− = 0

ND NA
NV e −( EF − EV ) / kBT − NC e−( EC − EF ) / kBT + − =0
1 + 2e( EF − ED ) / kBT 1 + 4e( EA − EF ) / kBT

− β ( Ec − EF ) + β ( Ev − EF )
n − p = 0 ⇒ NC e = NV e

EG 1 NV
EF ≡ Ei = + ln
2 2β NC

Alam  ECE‐606 S09 4
Outline

1) Intrinsic carrier concentration
2) Temperature dependence of carrier concentration
3)) Multiple doping, co‐doping, and heavy‐doping
p p g, p g, y p g
4) Conclusion

Alam  ECE‐606 S09 5
Carrier Density with Donors

In spatially homogenous field‐free region …

p − n + N D+ + N A− = 0
Assume
Ass m
N-type doping …

ND NA
NV e −( EF − EV ) / kBT − N C e−( EC − EF ) / kBT + ( EF − ED ) / k B T
− ( E A − EF ) / k B T
=0
1 + 2e 1 + 4e

n
(will plot in next slide)

Alam  ECE‐606 S09 6
Temperature‐dependent Concentration

Freeze Intrinsic 
out Extrinsic 
n
1
ND

ni
ND

Temperature

Alam  ECE‐606 S09 7
Physical Interpretation

Freeze Intrinsic 
out Extrinsic 
n
1
ND

ni
ND

Temperature

Alam  ECE‐606 S09 8
 Electron Concentration with Donors

− β ( EC − EF ) n β EC
n = NC e ⇒ e = e β EF
NC

+ ND ND ND
N = β ( E F − ED )
= ≡
D
1 + 2e ⎡ n β ( Ec − ED ) ⎤ 1 + n
1+ 2 ⎢ e ⎥
⎣ C
N ⎦ Nξ

Alam  ECE‐606 S09 9
 Electron concentration with Donors

p − n + N D+ = 0

−( EF − EV ) / k B T −( EC − EF ) / k B T ND
NV e − NC e + ( E F − ED ) / k B T
=0
1 + 2e

p × n = ni2 ni2 ND
−n+ =0
n n
1+
Nξ

No approximation so far ….
Alam  ECE‐606 S09 10
High Donor density/Freeze out T

ni2 ND
−n+ =0
n n
1+
Nξ
N D  ni Freeze
out Extrinsic 
Intrinsic 

n
1
ND
ND
⇒ −n + ≈0
n ni
1+ ND
Nξ
Temperature
p
⇒ n + Nξ n − Nξ N D = 0
2

Nξ ⎡⎛ 4 N D ⎤
12
⎞
N C − β ( EC − ED ) n= ⎢⎜ 1 + ⎟⎟ − 1⎥
Nξ ≡ e 2 ⎢⎜⎝ Nξ ⎠ ⎥
2 ⎣ ⎦
Alam  ECE‐606 S09 11
Freeze‐out/Extrinsic T

N C − ( EC − ED ) / kT
Nξ ≡ e  ND
2

Nξ ⎡⎛ 4 N D ⎤
12
⎞
n= ⎢⎜ 1 + ⎟⎟ − 1⎥
2 ⎢⎜⎝ Nξ ⎠ ⎥ Freeze Intrinsic 
⎣ ⎦ n
out Extrinsic 

Nξ ⎡⎛ 1 4 N D ⎞ ⎤
1
ND
≈ ⎢⎜⎜1 + ⎟⎟ − 1⎥
2 ⎢⎣⎝ 2 Nξ ⎠ ⎥⎦ ni
ND
≈ ND
Temperature

Electron concentration equals donor density

hole concentration by nxp=ni2
Alam  ECE‐606 S09 12
Extrinsic/Intrinsic T

ND
N D+ = ( EF − ED ) / k B T
≈ N D for EF < ED
1 + 2e
0
Freeze Intrinsic 
2
n ND out E i i
Extrinsic 
i
−n+ =0 n
n n 1
1+ ND
Nξ
ni
ni2 ND
− n + ND ≈ 0
n Temperature

⇒ −ni2 + n 2 − N D n = 0 ND ⎡ ND 2⎤
2 12

n= +⎢ + ni ⎥
2 ⎣ 4 ⎦
Alam  ECE‐606 S09 13
Extrinsic/Intrinsic T

For N D  ni
12
ND ⎡ ND 2⎤
2
n= +⎢ + ni ⎥ ≈ ND Freeze
E i i
Extrinsic 
Intrinsic 
2 ⎣ 4 ⎦ out
n
1
ND

ni
For ni  N D ND

12 Temperature
ND ⎡ ND 2⎤
2
n= +⎢ + ni ⎥ ≈ ni
2 ⎣ 4 ⎦

Alam  ECE‐606 S09 14
Implications at High Temperature

What will happen if you use 
What will happen if you use
silicon circuits at very high 
temperatures ?
temperatures ? 

Alam  ECE‐606 S09 15
Determination of Fermi‐level

− β ( Ec − EF ) ⎛ n ⎞ 1
n = NC e ⇒ EF = EC + ln ⎜ ⎟
β ⎝ NC ⎠

p − n + N D+ = 0

−( EF − EV ) / k BT −( EC − EF ) / k BT ND
NV e − NC e + ( EF − ED ) / k B T
=0
1 + 2e

Alam  ECE‐606 S09 16
 Outline

1) Intrinsic carrier concentration
2) Temperature dependence of carrier concentration
3) Multiple doping levels, co‐doping, and heavy‐doping
4) Conclusion

Alam  ECE‐606 S09 17
Multiple Donor Levels

Multiple levels of same donor …
ND ND NA
p−n+ ( EF − ED 1 ) / k B T
+ ( EF − ED 2 ) / k B T
− ( E A − EF ) / k B T
=0
1 + 2e 1 + 2e 1 + 4e

Codoping…
N D1 ND2 NA
p−n+ ( EF − ED 1 ) / k B T
+ ( EF − ED 2 ) / k B T
− ( E A − EF ) / k B T
=0
1 + 2e 1 + 2e 1 + 4e

Alam  ECE‐606 S09 18
Heavy Doping Effects: Bandtail States

k ?

Alam  ECE‐606 S09 19
Heavy Doping Effects: Hopping Conduction 

E E Bandgap narrowing 

− β EG*
p × n = N C NV e
k K?
K? 
e.g. Base of HBTs

Band transport 
vs.
hopping‐transport

e.g. a‐silicon, OLED
ili OLED

Alam  ECE‐606 S09 20
Arrangement of Atoms

Poly‐crystalline
y y
Thin Film 
Transistors

Amorphous
Oxides

Crystalline
ll

Alam  ECE‐606 S09 21
Poly‐crystalline material 

Isotropic bandgap and increase in scattering

Alam  ECE‐606 S09 22
 Band‐structure and Periodicity

13901, 2008
8
B, 4, 2508,, 1971

PRL, 100,01
PRB

Edagawa, P
E
Periodicity is sufficient, but not necessary for bandgap.
Many amorphous material show full isotropic bandgap
Alam  ECE‐606 S09 23
Conclusions

1. Charge neutrality condition and law of mass‐action 
allows calculation of Fermi‐level and all carrier 
concentration.

2. For semiconductors with field, charge neutrality will not 
hold and we will need to use Poisson equation
hold and we will need to use Poisson equation.

3. Heaving doping effects play an important role in carrier 
transport. 

Alam  ECE‐606 S09 24