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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 15: Surface Recombination /Generation
Muhammad Ashraful Alam
M h d A h f l Al
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Nature of interface states
2) SRH formula adapted to interface states
SRH formula adapted to interface states
3) Surface recombination in depletion region
4) Conclusion

REF: ADF, Chapter 5, pp. 154‐167

Alam  ECE‐606 S09 2
 Surface states: Little bit of history

Hoerni’s diagram of Mesa  and planar transistors

Silicon oxide
Defect Induced 
Leakage Path
Emitter Base Emitter Base

Collector Collector

One of the fundamental advances in semiconductor history

Alam  ECE‐606 S09 3
Atomic configuration of Surface States

Single bonds

Alam  ECE‐606 S09 4
Surface States

Alam  ECE‐606 S09 5
Multiple Levels of Surface States

E E

Alam  ECE‐606 S09 6
Multiple Levels of Surface States

okay wrong
x
x

Alam  ECE‐606 S09 7
Outline

1) Nature of interface states

2) SRH formula adapted to interface states
SRH formula adapted to interface states
3) Surface recombination in depletion region
4) Conclusion

Alam  ECE‐606 S09 8
 Surface Recombination Current

For single level bulk traps ….

Rbulk =
np − n 2
i
=
( np − n ) N
2
i T

1 1
1
( 1)
n + n +
1
( p + p1 ) ( n + n1 ) + ( p + p1 )
c p NT cn NT cp cn

For single level interface trap at E …
For single level interface trap at …

R(E) =
( n p
s s − n i ) DT ( E ) dE
2

1 1
( ns + n1s ) + ( ps + p1s )
c ps cns EC

R= ∫ R ( E )dE
EV

Alam  ECE‐606 S09 9
 Case 1: Minority Carrier Recombination

⎡⎣( ns 0 + Δns 0 )( ps 0 + Δps 0 ) − ni2 ⎤⎦ DIT ( E ) dE Donor doped

R(E) =
1 1
( ns 0 + Δns 0 + n1s ) + ( ps 0 + Δps 0 + p1s )
c ps cns

ns 0 Δps 0 DIT ( E ) dE ns0+Δns0

=
⎡ 1 n1s p1s ⎤
ns 0 ⎢ + + ⎥
⎢⎣ ps
c c n
ps s 0 cns s 0 ⎥
n ⎦

c ps Δps 0 DIT ( E ) dE
= ps0+Δps0
⎡ n1s c ps p1s ⎤
⎢1 + n + c n ⎥
⎣ s0 ns s0 ⎦

Alam  ECE‐606 S09 10
Consider the Denominator …

n1s c ps p1s n1s c ps p1s

D =1+ + =1+ +
ns 0 cns ns 0 N D cns N D

ni e( i ) c ps ni e − ( E − Ei ) β
E−E β
= 1 + ( EF − Ei ) β +
ni e cns ni e( EF − Ei ) β ns0+Δns0

( E − EF ) β c ps
e(
EF − E ) β
=1+ e +
cns

= 1 + e x + ae − x x ≡ β ( E − EF ) ps0+Δps0

Alam  ECE‐606 S09 11
 Consider the Denominator …

ni e( i ) c ps ni e −( E − Ei ) β
E−E β
D = 1+ + EF
ND cns ND
Ei
( E − EF ) β c ps
e(
EF − E ) β EF '
= 1+ e +
cns

ni c ps ni
At E = Ei ⇒ D = 1 + + ≈1
N D cns N D 2
D
At E = EF > Ei , x = 0 D = 1 + 1 +
c ps
× small ≈ 2
1
cns
EF Ei EF '

A E = EF ' < Ei ,
At D = 1 + small
ll + 1 = 2

Alam  ECE‐606 S09 12
Approximate the Denominator …

EF
ni e( i ) c ps ni e − ( E − Ei ) β
E−E β Ei
D =1+ + EF '
ND cns ND

⎡ 1 for EF ≤ E ≤ EF'
D≈⎢ 2
⎣∞ otherwise D
1
EF Ei EF '

Alam  ECE‐606 S09 13
Integrated Recombination

EC EC
c ps Δps 0 DIT ( E ) dE
R= ∫ R(E) = ∫ ⎡ n1s c ps p1s ⎤
⎢1 + +
EV EV
⎥
⎣ ns0 cns ns0 ⎦

EF

≈ ∫c ps Δps 0 D ( E ) dE D
2
EF ' 1
EF Ei EF '

Alam  ECE‐606 S09 14
Surface Recombination Velocity

EF

R≈ ∫c ps Δps 0 DIT ( E ) dE
EF

= c ps DIT ( EF − EF' ) Δps 0

= sg Δps 0

Surface recombination velocity

Alam  ECE‐606 S09 15
Outline

1) Nature of interface states

2) SRH formula adapted to interface states
SRH f l d t dt i t f t t
3) Surface recombination in depletion region
4) Conclusion

Alam  ECE‐606 S09 16
 Case 2: Recombination in Depletion

R(E) =
(n p
s s − n i ) DIT ( E ) dE
2

1 1
( ns + n1s ) + ( ps + p1s )
c ps cns
ni
= − ( E − E )β −( E − Ei ) β
ni DIT ( E ) dE
ni e i
ni e ns~0
0
+
c ps cns

e(
E − Ei ) β
dE
= −cns DIT ni
cns 2( E − Ei ) β
e +1
c ps ps~0

e(
EC E − Ei ) β
dE
R = −cns DIT ni ∫ cns 2( E − Ei ) β
EV e +1
c ps
Alam  ECE‐606 S09 17
Case 2: Recombination in Depletion

e(
EC E − Ei ) β
dE
R = −cns DIT ni ∫ cns 2( E − Ei ) β
EV e +1
c ps
e(
+∞ E − Ei ) β
dE
= −cns DIT ni ∫ cns 2( E − Ei ) β
ns~0
−∞ e +1
c ps
+∞
c ps dx
= −cns DIT niφ
cns ∫
0
x2 + 1
Ps~0
0

π
= − cns c ps DIT ni β
2

Alam  ECE‐606 S09 18
 Why do donors/acceptors not act as R‐G Centers?

c ps Δps 0 D ( E ) dE
R ( ED ) =
⎡ n1s c ps p1s ⎤
⎢1 + + ⎥
⎣ ns0 c ns n s0 ⎦

c ps Δps 0 N D
= →0
D ( ED )
c ps Δps 0 D ( E ) dE
R ( EA ) = 2
⎡ n1s c ps p1s ⎤ D
⎢1 + + ⎥ 1
⎣ ns0 c ns n s0 ⎦

c ps Δps 0 N A EF Ei EF '
= →0
D ( EA )
Alam  ECE‐606 S09 19
Summary

π
R = − cns c ps DIT β × ni Interface (depletion)
2

R = c ps DIT ( EF − E '
F ) Δp s Interface (minority)

R = c p N T Δp Bulk ((minority)
y)

Alam  ECE‐606 S09 20