NCN

www.nanohub.org

ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 16: Carrier Transport
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Overview
2) Drift Current 
Drift Current
3) Physics of Mobility
4) High field effects
High field effects
5) Conclusion

REF: Advanced Device Fundmentals, Pages 175‐ 192

Alam  ECE‐606 S09 2
 Current Flow Through Semiconductors 

I
I = G× V
= q×n× v × A
V
Carrier 
C i velocity
Density
Depends on chemical composition, 
y , p , p g,
crystal structure, temperature, doping, etc. 

Quantum Mechanics + Equilibrium Statistical Mechanics 
⇒ Encapsulated into concepts of effective masses 
and occupation factors  (Ch. 1‐4)

Transport with scattering, non‐equilibrium Statistical Mechanics 
⇒ Encapsulated into drift‐diffusion equation with 
l d d f d ff h
recombination‐generation (Ch. 5 & 6)
Alam  ECE‐606 S09 3
Non‐equilibrium Systems

Chapter 5 Chapter 6

I
vs.

Alam  ECE‐606 S09 4
Summary of Transport Equations …

∇ • D = q ( p − n + N D+ − N A− )
I
∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qnμ N E + qD
DN ∇n V

∂p 1
= − ∇ • J P − rP + g P
∂t q
J P = qp μ P E − qDP ∇p

Alam  ECE‐606 S09 5
Outline

1) Overview
2) Drift Current 
Drift Current
3) Physics of Mobility
4) High field effects
High field effects
5) Conclusion

Alam  ECE‐606 S09 6
Meaning of Effective Mass …  

m0

⎛ 2
d2 ⎞
⎜− 2
+ U crys ( x) + U ext ( x) ⎟ψ = Eψ
⎝ 2m0 dx ⎠

*
m n

⎛ 2
d2 ⎞
⎜ − * 2 + U ext ( x) ⎟ φ = Eφ
⎝ 2m0 dx
d ⎠
Alam  ECE‐606 S09 7
 Drift by Electric field ….

J n = qnμnE

d (mn*υ ) mn*υ
= −qE −
dt τn

qτ n ⎡ −
t
τn
⎤
υ (t ) = − * E ⎢1 − e ⎥ x
mn ⎢⎣ ⎥⎦ x x x

Alam  ECE‐606 S09 8
 Drift by Electric field ….

qτ ⎡ −
t
⎤
υ (t ) = − *n E ⎢1 − e τ n ⎥ x
m n ⎢⎣ ⎥⎦ x x x

qτ n
=− * E (t → ∞ , 1-2 ps)
mn friction
≡ μnE
υ (E1 )
J n = qnμnE υ υ (E2 )

time
(Theory valid once t > 1‐2 ps)
Alam  ECE‐606 S09 9
Outline

1) Overview
2) Drift Current 
Drift Current
3) Physics of Mobility
4) High field effects
High field effects
5) Conclusion

Alam  ECE‐606 S09 10
Mobility and Physics of Scattering Time 

x x x x

qτ n m0
μn = *
mn

*
m n

∞ 2
2π
τn ∼ ∫ ( x)U ( x)ψ ( x)ddx
ψ
−1 *
Fermi’s Golden rule …
−∞
Alam  ECE‐606 S09 11
 Phonon and Ionized Impurity Scattering 

Ionized impurity

T3 2 m0
τn ~
ND

Higher temperature, 
Higher temperature *
more phonon scattering m n

τ n ~ T −3 2

Alam  ECE‐606 S09 12
Multiple Scattering Events 

‰ Ionized impurity *
‰ Phonon scattering
m n
‰ others ….

1 1 1 1 1 1 1
μn
= +
μ ph μ II
= + + +
τn τ II τ ph τs
μ μ
⇒ μn = ph II
μ ph + μ II 1mn*
=
⎛ μ ph μ II ⎞ μn qτ n
= μmin + ⎜ − μmin ⎟
⎜μ +μ ⎟
⎝ ph II ⎠
⎛ μ0 ⎞
= μmin + ⎜ ⎟
⎜ 1 + ( N N )α ⎟ Matthession Rule ….
⎝ I 0 ⎠

Alam  ECE‐606 S09 13
 Model for Ionized impurity Scattering 

⎛ μ0,n ⎞
μn = μn ,min + ⎜ ⎟ mn*
⎜ 1 + ( N I N 0,n )α n ⎟
⎝ ⎠

μn ,min

Alam  ECE‐606 S09 14
Temperature‐dependent Mobility

μn ∼ τ n ~ T −3 2

Alam  ECE‐606 S09 15
Outline

1) Overview
2) Drift Current 
Drift Current
3) Physics of Mobility
4) High Field Effects
High Field Effects
5) Conclusion

Alam  ECE‐606 S09 16
 Mobility at High Fields? 

qτ N μ0
υ= E ≡ μN E ⇒ E
x x x mN* 1

x ⎡ ⎛ E ⎞n ⎤ n

⎢1 + ⎜ ⎟ ⎥
⎢⎣ ⎝ EC ⎠ ⎦⎥

υ (E )
What causes velocity 
saturation at high fields?

Where does all the mobility formula
Ec E in device simulator come from?
in device simulator come from?

Alam  ECE‐606 S09 17
Velocity Saturation in Si/Ge

E = 0 J1 = J + − J − = 0

E Ec J 2 = J + − J − > J1

E ≈ Ec J3 = J + − J − > J 2

E Ec J 4 = J + − J − ≈ J3

Alam  ECE‐606 S09 18
 Velocity Overshoot & Inter‐valley Transfer

Larger m* 

Smaller m* 
Smaller m

What type of scattering would you need for inter‐valley transfer?
Alam  ECE‐606 S09 19
Doping dependent Resistivity
J

V
E = ρJ
J = q ( μ n n + μ p p )E
1
ρ=
q( μn n + μ p p)
1
= … for nn-type
type
qμn N D
1
= … for p-type
p type
qμ p N A
Alam  ECE‐606 S09 20
 Conclusion

1)  Poisson and drift‐diffusion equations form a 
complete semi‐classical transport model that can 
explain wide variety of device phenomena. 

2) Drift current results from response of electrons/holes 
to electric field The physics of mobility is complex and
to electric field. The physics of mobility is complex and 
material dependent. 

3) Constancy of low‐field mobility can be checked by 
experiments. 

Alam  ECE‐606 S09 21