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Alam ECE‐606 S09 1
Outline
1) Introduction to p‐n junctions
2)) Drawing band‐diagrams
g g
3) Accurate solution in equilibrium
4) Band‐diagram with applied bias
Band diagram with applied bias
Ref. Semiconductor Device Fundamentals, Chapter 5
f d d l h
Alam ECE‐606 S09 2
What is a Diode good for ….
solar cells GaAs lasers
Organic LED
Avalanche Photodiode
Avalanche Photodiode GaN lasers
GaN lasers
Alam ECE‐606 S09 3
p‐n Junction Devices …
Symbols
N P
NA
ND
Alam ECE‐606 S09 4
Topic Map
Equilibrium DC Small
Small Large
Large Circuits
signal Signal
Diode
Schottky
BJT/HBT
MOS
Alam ECE‐606 S09 5
Drawing Band Diagram in Equilibrium…
∇ • D = q ( p − n + N D+ − N A− ) equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q
Alam ECE‐606 S09 6
P and N doped Material Side by Side …
E N‐doped P‐doped
Conduction Band Conduction Band
Ec
EF EF
EV
Valence Band Valence Band
No electron
N l t transfer
t f under
d
‐k k ordinary circumstances!
Alam ECE‐606 S09 7
Forming a Junction
ND NA
n = ND p = NA
2
n0 = ni N A
x
Junction
Actual Carrier
n Concentrations p
Alam ECE‐606 S09 8
Formation of a Junction
+
ND NA
ln(ND) ln(NA)
ln(p)
ln(n)
qND Depleted Region
Q=p‐n+N
Q p D‐NA
Bulk Region
Bulk Region Bulk Region
Bulk Region
xn xp -qNA
Alam ECE‐606 S09 9
Sketch of Electrostatics
Potential Vbi
position
q q
Emax = xp N A = xn N D
EE‐field
field K sε o K sε o
position
qND
p-n+ND-NA
Depleted
Region
position
xn xp
Bulk Region Bulk Region
-qNA 10
Sketch of Electrostatics
Potential xn xp
position
Band Diagram
position
Alam ECE‐606 S09 11
Outline
1) Introduction to p‐n junctions
2) Drawing band‐diagrams
3) Analytical solution in equilibrium
4) Band‐diagram with applied bias
Alam ECE‐606 S09 12
Short‐cut to Band‐diagram
Space
Neutral Charge Neutral
ND NA
Vacuum level
Vacuum level
χ2
χ1 EC
EF
EV
qVbi
χ2
χ1
Δ1 Eg,2
Δ2
Δ1 + χ1 + qVbi = χ 2 + Eg ,2 − Δ 2
qVbi = Eg ,2 − Δ 2 − Δ1 + χ 2 − χ1
⎛ NA ⎞ ND
= ⎜⎜ Eg ,2 + k BT ln +
⎟⎟ B k T ln + ( χ 2 − χ1 )
⎝ NV ,2 ⎠ NC ,1
N AND
= k BT ln − Eg ,2 / k BT
+ ( χ 2 − χ1 )
NV ,2 NC ,1e
Alam ECE‐606 S09 14
Interface Boundary Conditions
position
iti
xn xp
E = (D/kεo)
position
xn xp
D1 = K1ε 0 E (0 ) = K 2ε 0 E (0 ) = D2
− −
K2
−
E (0 ) = E (0+ )
K1
Displacement is continuous across the interface, field need not be ..
Alam ECE‐606 S09 15
Built‐in voltage for Homo‐junctions
Space
Neutral Charge Neutral
ND NA
qVbi
χ1 Vacuum level
χ1 EC
EF
EV
N A ND N A ND N A ND
qVbi = k BT ln −E / k T
+ ( χ 2 − χ1 ) = k B T ln −E / k T
= k B T ln
NV ,2 NC ,1e g ,2 B NV NC e g B ni2
16
Analytical Solution of Poisson Equation
Depleted Region
qN
ND
Q=
p
p‐n+N ‐qNA
D‐NA
position
xn xp
d 2V
K S ε 0 2 = − q ( p − n + N D+ − N A− )
dx
Alam ECE‐606 S09 17
Analytical Solution for Homojunctions
E (0 ) =
qND -qNA − qN D xn
(Charge)
p-n+ND-NA ksε 0
E (0 )=
position +
qN A x p
xn xp ksε 0
E‐field ⇒ N D xn = N A x p
position
E ( 0− ) xn E ( 0+ ) x p
Potential
Vbi qVbi = +
2 2
position qN D xn 2 qN A x p
2
= +
2k s ε 0 2k sε 0
Small !
Small !
Alam ECE‐606 S09 18
Depletion Regions in Homojunctions
Space
Neutral Charge Neutral
ND NA
xn xp
N D xn = N A x p 2k s ε 0 NA
xn = Vbi
q ND ( N A + ND )
qN D xn2
qN A x p 2
qVbi = + 2k s ε 0 ND
2k s ε 0 2k sε 0 xp = Vbi
q N A ( N A + ND )
-qNA
⎧ −KqNε oA .......... − xp ≤ x ≤ 0
⎪
d E ⎪ qND
s
= ⎨ K sε o ................0 ≤ x ≤ xn
d
dx ⎪
⎪⎩0............. x ≤ − xp , x ≥ xn
0 xn qN D
∫ε dε ′ = ∫ dx′
E ( x) qN A
x
∫
0
dε ′ = −∫
− xp K ε
S 0
dx′ ( x) x KSε 0
qN A qN D
E ( x) = − ( x p + x).......... − xp ≤ x ≤ 0 E ( x) = − ( xn − x)..........0 ≤ x ≤ xn
KSε 0 KSε 0
Alam ECE‐606 S09 20
Outline
1)) Introduction to p‐n junction transistors
p j
2) Drawing band‐diagrams
3) Analytical solution in equilibrium
Analytical solution in equilibrium
4) Band‐diagram with applied bias
Alam ECE‐606 S09 21
Topic Map
Equilibrium DC Small
Small Large
Large Circuits
signal Signal
Diode
Schottky
BJT/HBT
MOS
Alam ECE‐606 S09 22
Applying Bias to p‐n Junction
ln(I)
() 3 1 Diffusion
1. Diff i limited
li it d
2
2. Ambipolar transport
1
3. High injection
6,7
VA 4. R
R-G
G in depletion
5. Breakdown
4 6. Trap-assisted R-G
5 7. Esaki Tunneling
Alam ECE‐606 S09 23
Forward and Reverse Bias
ND NA
Forward Bias
ND NA
Reverse Bias
Alam ECE‐606 S09 24
Band Diagram with Applied Bias…
∇ • D = q ( p − n + N D+ − N A− ) Band diagram (now) …
∂n 1
= ∇ • J N − rN + g N
∂t q
J N = qnμ N E + qDN ∇n
Next class …
∂p 1
= − ∇ • J P − rP + g P
∂t q
J P = qp μ P E − qDP ∇p
Alam ECE‐606 S09 25
Applying a Bias: Poisson Equation
qVbi
Max value of Vbi?
EC-EF
EF-EV
n( x ) = ni e (Fn −Ei ) β
q(Vbi-V)
− ( Fp −Ei ) β
p( x ) = ni e
EC-F
Fn
( Fn −Fp ) β
-qV n × p = ni 2 e
Fp-EV
Alam ECE‐606 S09 26
Depletion Widths
-V ND NA GND
xn xp
2ksε 0 NA
xn = (Vbi − V )
ND xn = NA x p q ND ( NA + ND )
qND xn 2
qNA x p 2
q (Vbi − V ) = + 2ksε 0 ND
2k s ε 0 2k s ε 0 xp = (Vbi − V )
q NA ( NA + ND )
What about heterojunctions?
Alam ECE‐606 S09 27
Fields and Depletion at Forward/Reverse Biases
VA<0
VA=0
VA>0
Charge
P N
VA<0
VA=0
VA>0
Position Barrier height is reduced
Barrier height is reduced
at forward biases
Electric Field
VA<0
0
VA=0
VA>0
Significant increase of
peak field at reverse
Position bias …
Potential
VA<0
VA=0
VA>0
Position
Alam ECE‐606 S09
Conclusion
1) Learning to draw band
Learning to draw band‐diagram
diagram is one of the most
is one of the most
important topic you learn in this course. Band‐diagram
i
is a graphical way of quickly solving Poisson equation.
hi l f i kl l i P i i
2) If you consistently follow the rules of drawing band‐
diagrams, you will always get correct results. Try to
follow the rules, not guess the final result.
Alam ECE‐606 S09 29