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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 21: p‐n Diode I‐V Characteristics
Muhammad Ashraful Alam
alam@purdue edu
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Derivation of the forward bias formula
2) Solution in the nonlinear regime
3) I‐V in the ambipolar regime
4)) Conclusion

Ref SDF Chapter 6

Ref. SDF, Chapter 6

Alam  ECE‐606 S09 2
Topic Map

Equilibrium
q DC Small  Large 
g Circuits
signal Signal

Diode

Schottky

BJT/HBT

MOSFET

Alam  ECE‐606 S09 3
Continuity Equations for p‐n junction Diode

∇ • E = q ( p − n + N D+ − N A− )

∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qqnμ N E + qqDN ∇n
Will focus on this part today …
∂p 1
= ∇ • J P − rP + g P
∂t q
J P = qp μ P E − qDP ∇p

Alam  ECE‐606 S09 4
Applying a Bias: Poisson Equation

qVbi

EC-EF
EF-EV

q(Vbi-V)

EC-F
Fn
-qV
Fp-EV

Alam  ECE‐606 S09 5
 Depletion Widths

-V ND NA GND

xn xp

2ksε 0 NA
xn = (Vbi − V )
ND xn = NA x p q ND ( NA + ND )

qND xn 2
qNA x p 2
q (Vbi − V ) = + 2kksε 0
2 ND
2k s ε 0 2k s ε 0 xp = (Vbi − V )
q NA ( NA + ND )

Alam  ECE‐606 S09 6
Flat Quasi‐Fermi Level up to Junction

EC
EV

Jn
EC

EV
Jp
Alam  ECE‐606 S09 7
Various Regions of I‐V Characteristics
q
l (I ) ~
ln( VA
k BT
ln(I)
() 3 1 Diffusion
1. Diff i limited
li it d
2
2. Ambipolar transport
1
3. High injection
6,7
VA 4. R
R-G
G in depletion

1 5. Breakdown

4 6. Trap-assisted R-G

5 7. Esaki Tunneling

Alam  ECE‐606 S09 8
Recall: One Sided Minority Diffusion
Steady state
y
Acceptor doped
Can calculate current 
anywhere, let us solve q(V
( bi‐V))
the problem where it 
is the easiest … ‐V
V
Fp‐EV

∂n 1 dJn
= − rn + gn
∂t q dx

dn d 2n
Jn = qnμn E + qDn 0 = Dn 2
dx dx

Alam  ECE‐606 S09 9
 Boundary Conditions
Δn(0+ ) = n(0+ )VG − n(0+ )VG =0
ni2 qVA β
+
n( x = 0 ) = ni e ( Fn − Ei ) β
=
NA
( e − 1)
+ − ( Fp −Ei ) β
p( x = 0 ) = ni e

2 ( Fn − Fp ) β 2 qVA β
np = n e i =n e i q(Vbi-VA)

+
p(0 ) = NA -VA
Fp
Fn

n 2
n(0+ ) = i eqVA β
NA
NA

Alam  ECE‐606 S09 10
Right Boundary Condition

ni2
n( x = W p ) ≈
NA
Δn( x = W p ) = 0
EC

EV

Alam  ECE‐606 S09 11
 Example: One Sided Minority Diffusion

d 2n
DN 2 = 0
dx

Δn( x, t ) = C + Dx V

x = W p , Δn( x = W p ) = 0 ⇒ C = − DW p
ni2 qVA β
x = 0 ', Δn( x = 0) =
NA
( e − 1) = C

ni2 qVVA β ⎛ x ⎞
Δn( x, t ) =
NA
( e − 1) ⎜1 −
⎜ ⎟⎟
⎝ Wp ⎠
12
 Electron & Hole Fluxes

ni2 qVA β ⎛ x ⎞
Δn ( x ) =
NA
( e − 1) ⎜1 −
⎜ ⎟⎟ J N = qnμ N E + qDN ∇n
⎝ Wp ⎠

Δn
qDn ni2 qVA β
J n = qDn
dn
dx
=−
Wp N A
( e − 1)
x =0
Fn
Fp

Δp

qD p ni2 qVA β
J p = −qD p
dp
dx
=−
Wn N D
( e − 1)
x = 0'
Alam  ECE‐606 S09 13
Total Current
⎡ Dn ni2 D p ni2 ⎤ qV β
Forward  Bias JT = −q ⎢ + ⎥ ( e A − 1)
ln J T ≈ qqVA k BT + ln((const.)) ⎢⎣ W p N A Wn N D ⎥⎦

Reverse Bias
J T ≈ const. Δn

Fn
ln(I) Fp
(3)
(2)
(1)
VA Δp
(4)
(5)
Alam  ECE‐606 S09 14
Outline

1)) Derivation of the forward bias formula
2) Solution in the nonlinear regime
3) I‐V in the ambipolar regime
I V in the ambipolar regime
4) Conclusion

Alam  ECE‐606 S09 15
 Nonlinear Regime (3) …

⎥
⎢⎣W p N A Wn N D ⎥⎦
e (
⎡ Dn ni2 D p ni2 ⎤ ( qVA −ΔFn − ΔFp ) β
JT = −q ⎢ + − 1 ) (
= I0 e
q (VA − aJ n −bJ p ) β
)
−1

ln(I) 3
2

6,7
VA
16
 Flat Quasi‐Fermi Level up to Junction ?

dn dFn J nWn
J N = qnμ N E + qDN J n = nμ n ⇒ ΔFn =
dx dx μn N D

β ( Fn − Ei ) dn ⎡ dFn ⎤
n = ni e qD
DN DN β ⎢
= qD − E ⎥ ⎡⎣ ni e β ( Fn − Ei ) ⎤⎦
dx ⎣ dx ⎦

dn ⎡ dFn ⎤
qDN = qDN nβ ⎢ −E ⎥
dx ⎣ dx ⎦ Fn
Fp
⎡ dFn ⎤ DN k BT
= qμ N n ⎢ −E ⎥ ∵ =
⎣ dx ⎦ μn q

Wn
Alam  ECE‐606 S09 17
 Forward Bias: Nonlinear Regime …

( )
2
n ( F −F ) β ni2 ( qVA − ΔFn − ΔFp ) β n 2
( qV − ΔF − ΔF ) β
n(0+ ) = i e n p = e ⇒ Δn(0+ ) = i e A n p − 1
NA j
junction NA NA

+ ⎥ e
⎢⎣W p N A Wn N D ⎥⎦
(
⎡ Dn ni2 D p ni2 ⎤ ( qVA −ΔFn − ΔFp ) β
JT = −q ⎢ −1 )
Δn

J nWn
ΔFn = ΔFn
μn N D VA ΔFp
J pWn
ΔFp =
μn N D
A
Approx: Still diffusion dominated transport? 
Still diff i d i t d t t?

Alam  ECE‐606 S09 18
Outline

1) Derivation of the forward bias formula
2) Solution in the nonlinear regime
3) I‐V in the ambipolar regime
4) Tunneling and I‐V characteristics
5)) Conclusion

Alam  ECE‐606 S09 19
Region (2): Ambipolar Transport

⎡ Dn D p ⎤ ( qVA −ΔΔFn −ΔΔFp ) β / 2 qVA

JT ≈ −q ⎢ + ⎥ ni e ln( J T ) ≈
⎢⎣W p Wn ⎥⎦ 2 k BT

ln(I) 3
2

6,7
VA
20
 Nonlinear Regime: Ambipolar Transport
2 ( Fn − Fp ) β
np = n ei

(
ni2
NA (
q (V −ΔF −ΔF ) β
+ Δn)( N A + Δp ) = ni2 e A n p − 1 )
Δn ≈ Δp = ni ( e
(
q VA −Δ
ΔFn −Δ )
ΔF p β
−1 )
(
q VA −ΔFn −ΔFp β / 2 )
≈ ni e
Δn qDn ni ( qVA −ΔFn −ΔFp ) β / 2
J n = − qDn = e
Wp Wp
Δn qD p ni ( qVA −ΔFn −ΔFp ) β / 2
J p = −qD p = e
Wn Wn

Note: junction never disappears!  
Alam  ECE‐606 S09 21
Outline

1) Derivation of the forward bias formula
2) Solution in the nonlinear regime
3) I‐V in the ambipolar regime
4) Tunneling and I‐V characteristics
5)) Conclusion

Alam  ECE‐606 S09 22
 Forward Bias Nonlinearity (7): Esaki Diode
ln(I) 3

Fn
2
Fp

6,7
empty
VA
Fn
Fp 23

Heavy doping
I 1
No states!
X
Fn
Fp
VA
Alam  ECE‐606 S09
 Reverse Bias (5): Zener Tunneling
+VA
Fp
empty
Fn 4

I = qpT υ
empty
4
T=
⎛α k ⎞
4 cosh αd + ⎜ − ⎟ sinh 2 αd
2

⎝ k α⎠
(p 49 ADF)
(p.49

Alam  ECE‐606 S09 24
Conclusion

1) I‐V characteristics of a p‐n junction is defined by many 
interesting phenomena including diffusion, ambipolar 
transport, tunneling etc.
transport, tunneling etc. 
2) The separate regions are identified by specific features. 
Once we learn to identify them we can see if one or the
Once we learn to identify them, we can see if one or the 
other mechanism is dominated for a given technology. 
3) In the next class, we will discuss a few more non‐ideal 
effects. 

Alam  ECE‐606 S09 25