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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 23: AC Response
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Topic Map

Equilibrium
q DC Small  Large 
g Circuits
signal Signal

Diode

Schottky

BJT/HBT

MOSFET

Alam  ECE‐606 S09 2
Why should we study AC Response?

Conductance
Junction 
Capacitance
p Series Resistance
www.sci-toy.com
it

Diffusion Capacitance
Alam  ECE‐606 S09 3
Outline

1) Conductance and series resistance
2) Majority carrier junction capacitance
3) Minority carrier diffusion capacitance
4)) Conclusion

Ref SDF Chapter 7

Ref. SDF, Chapter 7

Alam  ECE‐606 S09 4
Forward Bias Conductance ln(I) 3
2
1

( )
q (VA − RS I ) β / m
6,7 V
I = Io e −1
4
G 5
RG, diff, ambiploar

I + Io β CJ
RS
ln = q (VA − RS I )
I0 m
Cdiff

m dVA 1 m
= − RS = RS +
qβ ( I + I o ) dI g FB qβ ( I + I 0 )

Alam  ECE‐606 S09 5
Reverse Bias Conductance ln(I) 3
2
1
6,7 V
4
5
(
I = Io e
q (VA − RS I ) β / m
) qni
− 1 − B0 Vbi − VA
2τ
qni
≈ − I 0 − B0 Vbi − VA
2τ
G

1 qni B0 RS
= CJ
g RB 2τ Vbi − VA
Cdiff

Alam  ECE‐606 S09 6
Outline

1) Conductance and series resistance
2) Majority carrier junction capacitance
3) Minority carrier diffusion capacitance
4)) Conclusion

Alam  ECE‐606 S09 7
 Junction Capacitance
Conductance

Series Resistance
Series Resistance
VDC Junction 
Capacitance

Diffusion Capacitance

Alam  ECE‐606 S09 8
 Majority Carrier Junction Capacitance
Conductance
Δρ
VA<0 Series Resistance
Series Resistance
Junction 
x
Capacitance
Δρ
VA>0 Diffusion Capacitance
x

Measure Cj

K sε 0 A K sε 0 A
CJ = = Va
Wn + W p ⎛ 2 K sε 0 2 K sε 0 ⎞
⎜ + ⎟ (Vbi − VA ) 0
⎝ qN D qN A ⎠

Alam  ECE‐606 S09 9
 Measurement of Built‐in Potential

1 2
≈ (Vbi − VA )
CJ 2
qN D ( x) K sε 0 A 2

(Assume single sided p+‐n junction)

measure plot CJ‐22

CJ

VA VA

Vbi
Alam  ECE‐606 S09 10
 .. And Variable Doping 

1 2
≈ (Vbi − VA )
CJ 2
qN D ( x ) K s ε 0 A 2
measure
CJ

2 1
N D ( x) =
qK sε 0 A2 d (1 CJ2 ) dVA VA

Charge plot CJ‐2

VA<0
VA=0
VA>0

VA
Alam  ECE‐606 S09 11
 Dielectric Relaxation Time (majority side)

dn 1 dJ n
J n = qnμ N E + qDN ∇n = − Rn + Gn
d
dt q dx
d

d ( Δn ) 1 d ( qnμ N E ) dE
= = ND μN
VDC dt q dx dx
dE
=
q
dx k S ε 0
( p − n0 − Δn + N D − N A )

d ( Δn ) qqN D μ N σ 0 Δn
=− Δn = −
K s ε0 dt kS ε 0 kS ε 0
τd = ≈ 0.1 ps σ 0t
σ
t
− −
kS ε 0 τd
Δn(t ) = n0 e = n0 e
Alam  ECE‐606 S09 12
Outline

1) Conductance and series resistance
2) Majority carrier junction capacitance
3) Minority carrier diffusion capacitance
4)) Conclusion

Alam  ECE‐606 S09 13
Diffusion Capacitance 
f Mi it C i
for Minority Carriers p n

dn
J N = qnμ N E + qD
DN
dx

x
∂n 1 dJ n
= − rN + g N
∂t q dx
VDC

∂ ( n0 + Δndc + Δnac e jωt ) d 2 ( n0 + Δndc + Δnac e jωt ) Δndc + Δnac e jωt

= DN −
∂t dx 2
τn

Alam  ECE‐606 S09 14
Diffusion Capacitance for Minority Carriers

∂ ( n0 + Δndc + Δnac e jωt ) d 2 ( n0 + Δndc + Δnac e jωt ) Δndc + Δnac e jωt

= DN −
∂t dx 2
τn

d 2 Δndc jωt d Δnac

2
Δndc jωt Δnac
jωΔnac e jωt
= DN +e − −e
dx 2
dx
d 2
τn τn
x x
d Δndc Δndc
2 − +
DC : 0 = DN − ⇒ Δndc = Ae Ln
+ Be Ln

dx 2
τn
x x x
d Δnac
2
Δnac − + −
AC : 0 = DN − ( jωτ + 1) ⇒ Δnac = Ce Ln *
+ De Ln *
→C
Cee Ln *

dx 2 n
τn

Ln* = Dnτ n / (1 + jωτ n ) τ n* = τ n / (1 + jωτ n )

Alam  ECE‐606 S09 15
AC Boundary Conditions

ni2 ⎛ qVkTdc ⎞
Δndc ( x = 0) = ⎜ e − 1 ⎟
NA ⎝ ⎠
⎛ q Vdc +Vac e ⎞
jωt
2

( Δndc + Δnac e jωt

) = N + Δn p e jωt
i
⎜ e kT
⎜
− 1⎟
⎟ n
A ac ⎝ ⎠

n ⎛ kTdc ackT ⎞
jωt
qV qV e 2

( Δndc + Δnac e ) ≈ N ⎜⎜ e e
jωt i
− 1⎟
⎟
A ⎝ ⎠
xn
n 2
⎧⎪ qVdc
⎛ qVac e jωt
⎞ ⎫⎪
≈ i
⎨e kT
⎜1 + ⎟ − 1⎬
NA ⎪⎩ ⎝ kT ⎠ ⎭⎪

qV
Vac ni2 kTdcd
qV
Δnac ( x = 0) = e =C
kT N A
Alam  ECE‐606 S09 16
AC Current and Impedance

qVac ni2 qVkTdc

Δnac ( x = 0) = e =C
kT N A
x x x
− + −
Δnac ( x) = Ce Ln *
+ De Ln *
→ Ce Ln *

d Δnac
qV
qDn qVac ni2 kTdc
J ac = − qDn = * e
dx x =0 Ln kT N A

qV
J ac q 2 Dn ni2 kTdc
Yac = = * e ≡ G0 1 + jωτ n
Vac Ln kT N A

Alam  ECE‐606 S09 17
 Diffusion Conductance and Capacitance
GD ∝ ω
Yac = GD + jωCD ≡ G0 1 + jωτ n

Separate in real & 
p
imaginary parts …

1/ 2
G0 ⎡
GD = 1 + ω τ n + 1⎤
2 2

2⎣ ⎦

1/ 2
G0 ⎡
ωCD = 1 + ω τ n − 1⎤
2 2

2⎣ ⎦
CD ∝ 1/ ω
Alam  ECE‐606 S09 18
Conclusion

1) Small signal response relevant for many analog 
applications.
2) Small signal parameters always refer to the DC 
operating conditions, as such the parameter changes 
with bias condition.
with bias condition. 
3) Important to distinguish between majority and 
minority carrier capacitance. Their relative 
i it i it Th i l ti
importance depends on specific applications. 

Alam  ECE‐606 S09 19