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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 24: Large Signal Response
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Topic Map

Equilibrium
q DC Small  Large 
g Circuits
signal Signal

Diode

Schottky

BJT/HBT

MOSFET

Alam  ECE‐606 S09 2
Outline

1) Large signal response and charge control model
Large signal response and charge control model
2) Turn‐off characteristics
3) Turn‐on characteristics
Turn on characteristics
4) Other applications
5) Conclusion

Ref. SDF, Chapter 8

Alam  ECE‐606 S09 3
Digital, Large Signal Applications
VA(t)

ln(I)
t

‘0’ ‘1’
‘0’ to ‘1’
‘1’ V A ‘1’ to ‘0’
‘0’
0
V
i(t) IF

‐0.1IR

‐IR tr
ts
trr Alam  ECE‐606 S09 4
Definitions

VA(t)

t ts … Charge storage time

i(t) tr … Recovery time
Recovery time
IF
trr .. Reverse recovery time
‐0.1IR

‐IR tr
ts
trr

Alam  ECE‐606 S09 5
Continuity Equations

Full analytical solution impossible for large signal….

∇ • D = q ( p − n + N D+ − N A− )
∂n 1
= ∇ • J N − rN + g N ∂Qn Qn
∂t q = in , diff −
∂t τn
J N = qnμ N E + qDN ∇n
∂p 1
= ∇ • J P − rP + g P ∂Q p Qp
∂t q = i p , diff −
∂t τn
J P = qp μ P E − qDP ∇p
Charge control equations …
Alam  ECE‐606 S09 6
Large Signal Charge Control Model
( )
n(x,t)

VDC

∂n 1 dJ n dn
= − rN + g N J N = qnμ N E + qDN
∂t q dx dx

∂ ( Δn ) d 2 ( Δn ) Δn
= DN −
∂t dx 2
τn
Alam  ECE‐606 S09 7
Large Signal Charge Control Model
n(x,t) Area under the
curve @ given 
∂ ( Δn ) d 2 ( Δn ) Δn time
= DN −
∂t dx 2
τn
x
∂ ( qAΔn ) d d ( qAΔn )
Wp
qAΔn
Wn Wn


0
∂t
dx = ∫
0
DN
dx dx
dx − ∫
0
τn
dx

d ( qAΔn ) d ( qAΔn )
Wp
∂Q
= DN − DN −
Q Q≡ ∫ ( qAΔn ) dx
∂t dx x =W p
dx x=0
τn 0

∂Q Q
= idiff −
∂t τn
Alam  ECE‐606 S09 8
Outline

1) Large signal response and charge control model
2) Turn
Turn‐off
off characteristics
characteristics
3) Turn‐on characteristics
4) Other applications
Oth li ti
5) Conclusion

Alam  ECE‐606 S09 9
Turn‐off Characteristics: Determine (ts)
S R
IF

‘1’ V A VF +
P VR
‘0’ Vj N

IR
∂Q Q(0− )
t<0 = IF −
∂t τn
i(t)
∂Q Q IF
= idiff −
∂t τn ‐0.1I
0 1IR

‐IR tr
ts
Why does the current remain constant? trr
Alam  ECE‐606 S09 10
Boundary Condition
S R
IF

‘1’ V A VF +
P VR
‘0’ Vj N

IR

∂Q Q ∂Q Q(0− )
= idiff − t<0 = IF −
∂t τn ∂t τn

Q(0− ) = I Fτ n = Q(0+ )

Note. For a capacitor, charge can not change instantly ….


Alam  ECE‐606 S09 11
Turn‐off Current Transient
S R n(x,t)
IF

+
VF P VR
Vj N x

IR
constant!

∂Q Q ∂Q Q
= idiff − t>0 = −IR −
∂t τn ∂t τn

Q ( ts ) ts
dQ
I R + Q(0+ ) / τ n ∫ ⎛ Q⎞
= ∫ dt
ts = τ n ln Q ((0 + )
−⎜ IR + ⎟ 0
I R + Q(ts ) / τ n τn ⎠

Alam  ECE‐606 S09 12
Storage Time
S R
IF
ln(I)
+
VF P VR
Vj N

IR ‘0’ ‘1’
‘0’ to ‘1’
I R + Q(0+ ) / τ n IR + IF ‘1’ to ‘0’
ts = τ n ln = τ n ln
I R + Q(ts ) / τ n IR
V
n(x,t)
Shorten it for 
fast response!

x
Alam  ECE‐606 S09 13
Turn‐off Voltage Transient
S R
IF
Va ((t))
+
VF P VR
Vj N t

IR ts

kT n p (0, t )
υ A (t ) = ln
q n po n(x,t)

(
Qn (t ) = τ p ln − I R + ( I R + I F )e −t / τ p
)
x
Allows easy calculation of np(0,t).
Alam  ECE‐606 S09 14
Recovery Time


tr l (I)
ln(I)
τp
tr e IF
erf + = 1 + 0.1
τp tr IR ‘0’ ‘1’
‘0’ to ‘1’
π
τp ‘1’ to ‘0’
V
Useful formula …
0.5
tr
⎡ −x
1.27 + 0.15 x

erf ( x ) = ⎢1 − e 1+ 0.15 x

⎣ ⎦
Alam  ECE‐606 S09 15
Recovery Time

ln(I)
Ref. Sze/Ng, p. 117

‘0’ to ‘1’
‘1’
1  to 
to ‘0’
0
V

tr ts

⎡ W p2 ⎛ I ⎞ −2
⎢ ⎜ ⎟
R
(W p Ln )
⎢ n⎝ F⎠
2 D I
trr = tr + t f ≈ ⎢ −2
τ
⎢ p IR⎛ ⎞
⎢ 2 ⎜I ⎟ (W p Ln )
⎣ ⎝ F⎠

Alam  ECE‐606 S09 16
Outline

1) Large signal response and charge control model
2) Turn
Turn‐off
off characteristics
characteristics
3) Turn‐on characteristics
4) Other applications
Oth li ti
5) Conclusion

Alam  ECE‐606 S09 17
Turn‐on Characteristics: Boundary Condition
S R
IF

‘1’ V A VF +
VR
P
‘0’ Vj N

IR

∂Q Q ∂Q Q(t = ∞)
= idiff − t →∞ = IF −
∂t τn ∂t τn

Q(t = ∞) = I Fτ n

Alam  ECE‐606 S09 18
Turn‐on Characteristics
S R
IF
np(x,t)
+ time
ti
VF P VR
Vj N

IR
x

∂Q Q ∂Q Q
= idiff − t>0 = IF −
∂t τn ∂t τn

⎛ −
t
⎞ ⎛ −
t

Q(t ) = Q(t → ∞) ⎜ 1 − e τ n ⎟ = I Fτ n ⎜1 − e τ n ⎟
⎜ ⎟ ⎜ ⎟
⎝ ⎠ ⎝ ⎠

Alam  ECE‐606 S09 19
Outline

1) large signal response and charge control model


2) turn
turn-off
off characteristics
3) turn-on characteristics
4) other applications
5) conclusion

Alam  ECE‐606 S09 20
Calculating Diffusion Time by Charge Control

∂Q Q Q(0+)
= idiff − np(x,t)
(x t)
∂t τn

Q(0+ ) − Q(t = ∞)
= idiff
τ diff x
Wp
⎡ Δn p (0) ⎤
+
q⎢ ⎥ Wp 2
τ diff =
Q(0 )
= ⎣ 2 ⎦ W 1 Wp
=
p
∼ ×
idiff Δ n (0) 2 Dn 2 ( Dn / W p )
qDn p
Wp
Diffusion velocity
Alam  ECE‐606 S09 21
Two line derivation of Steady State Diode Current

∂Q Q Q
= idiff − np(x,t)
(x t)
∂t τn
τ n → τ diff
Q
idiff = x
τ diff

1 ni2 qVA β
q× ( e − 1) × W p
Dn ni2 qVA β Exact 
idiff =
Q
τ diffff
=
2 NA
Wp2
=q
Wp N A
( e − 1)
Expression!
2 Dn
Alam  ECE‐606 S09 22
Conclusion

Large signal response of devices of great importance for digital 
applications.

Analytical solution of partial differential equation often 
Analytical solution of partial differential equation often
difficult (if not impossible), therefore approximate methods 
like Charge‐control approximation often help simplify the 
solution and still provide a great deal of insight into the
solution and still provide a great deal of insight into the 
dynamics of switching operation.

Be careful in using the boundary condition which is often 
dictated by external circuit conditions. 

Alam  ECE‐606 S09 23

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