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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 24: Large Signal Response
Muhammad Ashraful Alam
alam@purdue.edu
Alam ECE‐606 S09 1
Topic Map
Equilibrium
q DC Small Large
g Circuits
signal Signal
Diode
Schottky
BJT/HBT
MOSFET
Alam ECE‐606 S09 2
Outline
1) Large signal response and charge control model
Large signal response and charge control model
2) Turn‐off characteristics
3) Turn‐on characteristics
Turn on characteristics
4) Other applications
5) Conclusion
Ref. SDF, Chapter 8
Alam ECE‐606 S09 3
Digital, Large Signal Applications
VA(t)
ln(I)
t
‘0’ ‘1’
‘0’ to ‘1’
‘1’ V A ‘1’ to ‘0’
‘0’
0
V
i(t) IF
‐0.1IR
‐IR tr
ts
trr Alam ECE‐606 S09 4
Definitions
VA(t)
t ts … Charge storage time
i(t) tr … Recovery time
Recovery time
IF
trr .. Reverse recovery time
‐0.1IR
‐IR tr
ts
trr
Alam ECE‐606 S09 5
Continuity Equations
Full analytical solution impossible for large signal….
∇ • D = q ( p − n + N D+ − N A− )
∂n 1
= ∇ • J N − rN + g N ∂Qn Qn
∂t q = in , diff −
∂t τn
J N = qnμ N E + qDN ∇n
∂p 1
= ∇ • J P − rP + g P ∂Q p Qp
∂t q = i p , diff −
∂t τn
J P = qp μ P E − qDP ∇p
Charge control equations …
Alam ECE‐606 S09 6
Large Signal Charge Control Model
( )
n(x,t)
VDC
∂n 1 dJ n dn
= − rN + g N J N = qnμ N E + qDN
∂t q dx dx
∂ ( Δn ) d 2 ( Δn ) Δn
= DN −
∂t dx 2
τn
Alam ECE‐606 S09 7
Large Signal Charge Control Model
n(x,t) Area under the
curve @ given
∂ ( Δn ) d 2 ( Δn ) Δn time
= DN −
∂t dx 2
τn
x
∂ ( qAΔn ) d d ( qAΔn )
Wp
qAΔn
Wn Wn
∫
0
∂t
dx = ∫
0
DN
dx dx
dx − ∫
0
τn
dx
d ( qAΔn ) d ( qAΔn )
Wp
∂Q
= DN − DN −
Q Q≡ ∫ ( qAΔn ) dx
∂t dx x =W p
dx x=0
τn 0
∂Q Q
= idiff −
∂t τn
Alam ECE‐606 S09 8
Outline
1) Large signal response and charge control model
2) Turn
Turn‐off
off characteristics
characteristics
3) Turn‐on characteristics
4) Other applications
Oth li ti
5) Conclusion
Alam ECE‐606 S09 9
Turn‐off Characteristics: Determine (ts)
S R
IF
‘1’ V A VF +
P VR
‘0’ Vj N
‐
IR
∂Q Q(0− )
t<0 = IF −
∂t τn
i(t)
∂Q Q IF
= idiff −
∂t τn ‐0.1I
0 1IR
‐IR tr
ts
Why does the current remain constant? trr
Alam ECE‐606 S09 10
Boundary Condition
S R
IF
‘1’ V A VF +
P VR
‘0’ Vj N
‐
IR
∂Q Q ∂Q Q(0− )
= idiff − t<0 = IF −
∂t τn ∂t τn
Q(0− ) = I Fτ n = Q(0+ )
+
VF P VR
Vj N x
‐
IR
constant!
∂Q Q ∂Q Q
= idiff − t>0 = −IR −
∂t τn ∂t τn
Q ( ts ) ts
dQ
I R + Q(0+ ) / τ n ∫ ⎛ Q⎞
= ∫ dt
ts = τ n ln Q ((0 + )
−⎜ IR + ⎟ 0
I R + Q(ts ) / τ n τn ⎠
⎝
Alam ECE‐606 S09 12
Storage Time
S R
IF
ln(I)
+
VF P VR
Vj N
‐
IR ‘0’ ‘1’
‘0’ to ‘1’
I R + Q(0+ ) / τ n IR + IF ‘1’ to ‘0’
ts = τ n ln = τ n ln
I R + Q(ts ) / τ n IR
V
n(x,t)
Shorten it for
fast response!
x
Alam ECE‐606 S09 13
Turn‐off Voltage Transient
S R
IF
Va ((t))
+
VF P VR
Vj N t
‐
IR ts
kT n p (0, t )
υ A (t ) = ln
q n po n(x,t)
(
Qn (t ) = τ p ln − I R + ( I R + I F )e −t / τ p
)
x
Allows easy calculation of np(0,t).
Alam ECE‐606 S09 14
Recovery Time
−
tr l (I)
ln(I)
τp
tr e IF
erf + = 1 + 0.1
τp tr IR ‘0’ ‘1’
‘0’ to ‘1’
π
τp ‘1’ to ‘0’
V
Useful formula …
0.5
tr
⎡ −x
1.27 + 0.15 x
⎤
erf ( x ) = ⎢1 − e 1+ 0.15 x
⎥
⎣ ⎦
Alam ECE‐606 S09 15
Recovery Time
ln(I)
Ref. Sze/Ng, p. 117
‘0’ to ‘1’
‘1’
1 to
to ‘0’
0
V
tr ts
⎡ W p2 ⎛ I ⎞ −2
⎢ ⎜ ⎟
R
(W p Ln )
⎢ n⎝ F⎠
2 D I
trr = tr + t f ≈ ⎢ −2
τ
⎢ p IR⎛ ⎞
⎢ 2 ⎜I ⎟ (W p Ln )
⎣ ⎝ F⎠
Alam ECE‐606 S09 16
Outline
1) Large signal response and charge control model
2) Turn
Turn‐off
off characteristics
characteristics
3) Turn‐on characteristics
4) Other applications
Oth li ti
5) Conclusion
Alam ECE‐606 S09 17
Turn‐on Characteristics: Boundary Condition
S R
IF
‘1’ V A VF +
VR
P
‘0’ Vj N
‐
IR
∂Q Q ∂Q Q(t = ∞)
= idiff − t →∞ = IF −
∂t τn ∂t τn
Q(t = ∞) = I Fτ n
Alam ECE‐606 S09 18
Turn‐on Characteristics
S R
IF
np(x,t)
+ time
ti
VF P VR
Vj N
‐
IR
x
∂Q Q ∂Q Q
= idiff − t>0 = IF −
∂t τn ∂t τn
⎛ −
t
⎞ ⎛ −
t
⎞
Q(t ) = Q(t → ∞) ⎜ 1 − e τ n ⎟ = I Fτ n ⎜1 − e τ n ⎟
⎜ ⎟ ⎜ ⎟
⎝ ⎠ ⎝ ⎠
Alam ECE‐606 S09 19
Outline
Alam ECE‐606 S09 20
Calculating Diffusion Time by Charge Control
∂Q Q Q(0+)
= idiff − np(x,t)
(x t)
∂t τn
Q(0+ ) − Q(t = ∞)
= idiff
τ diff x
Wp
⎡ Δn p (0) ⎤
+
q⎢ ⎥ Wp 2
τ diff =
Q(0 )
= ⎣ 2 ⎦ W 1 Wp
=
p
∼ ×
idiff Δ n (0) 2 Dn 2 ( Dn / W p )
qDn p
Wp
Diffusion velocity
Alam ECE‐606 S09 21
Two line derivation of Steady State Diode Current
∂Q Q Q
= idiff − np(x,t)
(x t)
∂t τn
τ n → τ diff
Q
idiff = x
τ diff
1 ni2 qVA β
q× ( e − 1) × W p
Dn ni2 qVA β Exact
idiff =
Q
τ diffff
=
2 NA
Wp2
=q
Wp N A
( e − 1)
Expression!
2 Dn
Alam ECE‐606 S09 22
Conclusion
Large signal response of devices of great importance for digital
applications.
Analytical solution of partial differential equation often
Analytical solution of partial differential equation often
difficult (if not impossible), therefore approximate methods
like Charge‐control approximation often help simplify the
solution and still provide a great deal of insight into the
solution and still provide a great deal of insight into the
dynamics of switching operation.
Be careful in using the boundary condition which is often
dictated by external circuit conditions.
Alam ECE‐606 S09 23