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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 28: BJT Design (I)
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Current gain in BJTs 
2) Considerations for base doping
Considerations for base doping
3) Considerations for collector doping
4) Conclusions

REF: SDF, Chapter 10

Alam  ECE‐606 S09 2
 Ebers Moll Model  qD p ni2, E qD p ni2, C
IB = A
WE N E
(e qVBE β
− 1) + A
WC N C
(e qVBC β
)
−1

⎛ qDn ni2, B qD p ni2, E ⎞ qVBE β 2

I E = − AE ⎜⎜ + ⎟⎟ ( e − 1) + AE
qDn ni , B qVBC β
e −1 ( )
⎝ WB N B WE N E ⎠ WB N B

(
= I F 0 ( e qVBE β − 1) − α R I R 0 e qVBC β − 1 )
IF IR

E C
IE IC
α RI R αF IF
B IB
2
⎡ qDn ni2, B qDn ni2, C ⎤ qVBC β
I F = I F 0 ( e qVBE β − 1) ( − 1) + AC ⎢ ( )
qDn ni , B qVBE β
I C = − AC e + ⎥ e −1
WB N B ⎣ WB N B WC N C ⎦
(
I R = I R 0 e qVBC β − 1 ) (
= α F I F 0 ( e qVBE β − 1) − I R 0 e qVBC β − 1 )
Alam  ECE‐606 S09 3
Gummel Plot and Output Characteristics

2 2
IC qDn ni , B qVBE / kT qDn ni , B qVBC / kT
− (e − 1) + (e − 1)
A WB N B WB N B

IB qqD p ni2, E qVBE / kT

= (e − 1)
A WE N E

IC
β DC =
IB
Common 
β DC emitter 
Current Gain
Current Gain
VBE
4
 Current Gain  C

Common Emitter current gain .. P+ IC
B IB
IC
β DC
N
= VEB
IB (in)
P

2 2
qDn ni , B qVBE / kT qDn ni , B ( qVBC / kT )
(e − 1) + (e − 1) E
2
E
WB N B WB N B Dn WE ni , B N E
= 2
≈
qDn ni , E qVBE / kT WB D p ni2, E N B
(e − 1)) E
C
WE N E P+ N P

IE IC
Common Base current gain .. VEB VCB
(out)
( )
(in)

α DC =
IC IC IC α DC
β DC = = =
B B
IE I B I E − I C 1 − α DC

Alam  ECE‐606 S09 5
 Current Gain

2
n
Dn WE i , B N E
β DC ≈
WB D p ni2, E N B

Alam  ECE‐606 S09 6
 How to make a Good Silicon Transistor

For a given Emitter length ~1, same material

2
n
Dn WE i , B N E
β DC ≈
WB D p ni2, E N B

Make‐Base short …
(few mm in 1950s 200 A now)
(few mm in 1950s, 200 A now) Emitter doping higher
Emitter doping higher
than Base doping

Alam  ECE‐606 S09 7
Doping for Gain …

2
n
Dn WE i , B N E
β DC ≈ 2
WB D p ni , E N B
N+
NE
P
NB
N
NC

Alam  ECE‐606 S09 8
Outline

1)) Current gain in BJTs
g
2) Considerations for base doping
3) Considerations for collector doping
Considerations for collector doping
4) Conclusions

Alam  ECE‐606 S09 9
Problem of Low Base Doping: Current Crowding 

VBE

n+ p base

n‐collector
VBE n+

IC ∫ CJ ( x ) dx ∫ WB N B
(
qDn ni , B qV 'BE ( x ) β
e − 1) dx
β= = =
I B ∫ J B ( x)dx qD p ni2, E qV 'BE ( x ) β
∫ WE N E ( e − 1) dx

Alam  ECE‐606 S09 10
Low Base Doping: Non‐uniform Turn‐on
n+ p base

n‐collector
n+

Alam  ECE‐606 S09 11
 Problem of Low Base Doping: Punch‐through 
NE

NB

NC

N+ N

2kk sε 0 22kk sε 0 NC
=
2 NE
(Vbi − VBE ) x p , BC = (Vbi − VBC )
x p , BE
q NB ( NE + NB ) q N B ( NC + N B )
Alam  ECE‐606 S09 12
Problem of low Base‐doping: Base Width Modulation 

Dn WE n 2i , B N E
β DC ≈
WB − x p , B − x p , c Dp n 2i , E N B
NE

NB

2k sε 0 NE
NC x p , BE = (Vbi − VBE )
q NB ( NE + NB )

2k sε 0 NC
x p , BC = (Vbi − VBC )
q N B ( NC + N B )
N+

N
P

Gain depends on collector voltage (bad) …

Alam  ECE‐606 S09 13
 Problem of Low Base‐doping: Early Voltage 

Dn WE n 2i , B N E
β DC ≈
WB − xp. B − xp.C D p n 2i , E N B

qDn n 2i , B ( qVBE / kT ) qDn n 2i , B ( qVBC / kT )

I n,C =− (e − 1) + (e − 1)
WB ' N B WB ' N B

dI C IC I IC In practice
= ≈ C
dVBC VBC + VA VA
Id ll
Ideally

VBC
VA 14
Alam  ECE‐606 S09
 Punch‐through and Early Voltage

dI C IC IC
= ≈
dVBC VBC + VA VA

CCB I C I
dI C dI C d (q
qN BWB ) − ≈ C
= qN B WB VA
dVBC d ( qN BWB ) dVBC
qN BWB
=
1 ⎛ dI C ⎞ ⎡ dQB ⎤ ⇒ VA = − →∞
⎜ ⎟⎢ ⎥ CCB
qN B ⎝ dWB ⎠ ⎣ dVBC ⎦
1 ⎛ IC ⎞
=− ⎜
qN B ⎝ WB
⎟ CCB Need higher NB and WB or …
⎠

2 2

IC =
WB N B
(
qDn ni , B qVBE β
e − 1) +
WB N B
(
qDn ni , B qVBC β
e −1 )
Alam  ECE‐606 S09 15
Outline

1)) Current gain in BJTs
g
2) Considerations for base doping
3) Considerations for collector doping
Considerations for collector doping
4) Conclusions

Alam  ECE‐606 S09 16
Collector Doping 

2
Dn WE ni , B N E
β≈
WB − x p , B − x p ,C D p ni2, E N B
NE

NB
qN BWB κ sε 0
VA = − CCB =
NC CCB xn , C + x p , B

If you wantt low

l base
b d
doping
i
then reduce collector doping
N+

N
P

even more to increase

Collector depletion…..
Alam  ECE‐606 S09 17
 … but (!) Kirk Effect and Base Pushout 

SSpace‐Charge Density
SSpace‐Charge Density

p‐Base C ll t
n‐Collector n‐Collector
p‐Base
n+ n+
Nc Nc
+
x x
‐
NB NB
WB WC WB WC
N B xB = N C xC ( N B + n ) xB ' = ( NC − n ) xC '
q
q Vbi − VBC = ⎡⎣( N B + n ) xB2 '+ ( N C − n ) xC2 '⎤⎦
Vbi − VBC = ⎡⎣ N x + N x ⎤⎦
2 2
2κ sε 0
2κ sε 0
B B C C

n JC
1+ 1+
NB qυ sat N B
J C = qυ sat n xC' = xC
n
= xC
JC
1− 1−
NC qυ sat N C
Alam  ECE‐606 S09 18
 Kirk Effect and Base Pushout 

n+ p n n+
emitte base collector
Space‐Charge Density

Charge

Charge
Space‐C

Space‐C
n‐Collector n+ p‐Base n‐Collector n+ p‐Base n‐Collector n+
p‐Base
Nc Nc
x
x x
WCIB nc‐Nc
NB NB WSC
WB WC WB WC WB WC
E

Alam  ECE‐606 S09 19
Kirk Effect and Base Pushout

JC
1+
qυ sat N B
xC' = xC
JC
1−
qυ sat N C

J C , crit = qυ sat N C ≡ J K

Can not reduce collector doping

arbitrarily
ar trar y wwithout
thout caus
causing
ng base
as pushout

Alam  ECE‐606 S09 20
Perhaps High Doping in Emitter? 

Band‐gap narrowing reduces gain significantly …
2
Dn WE ni , B N E D W N N e − Eg ,B / kT N
β≈ = n E C V E
≈e
−ΔEg / kT N E
WB D p ni2, E N B WB D p N N e − Eg ,E / kT N B NB
C V

( ki lik )
(Easki‐like) Tunneling cause loss of base control …
li l fb l

Alam  ECE‐606 S09 21
Summary
While basic transistor operation is simple, its optimum 
design is not. 

In general, good transistor gain requires that the emitter 
doping be larger than base doping which in turn should
doping be larger than base doping, which in turn should 
be larger than collector doping. 

If the base doping is too low, however, the transistor 
suffers from current crowding, Early effects. If the 
collector doping is too low, then we have kirk effect (base 
push out) with reduced high‐frequency operation and if 
the emitter doping is too high then the gain is red ced
the emitter doping is too high then the gain is reduced. 

Alam  ECE‐606 S09 22