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ECE606: Solid State Devices

Lecture 33: MOSCAP Electrostatics (II)
Muhammad Ashraful Alam
alam@purdue.edu

Alam ECE-606 S09 1

Outline

1. Review
2. Induced charges in depletion and inversion
3. Exact solution of electrostatic problem
4. Conclusion

REF: Chapters 15-18 from SDF

Alam ECE-606 S09 2

Topic Map

Equilibrium DC Small Large Circuits

signal Signal
Diode

Schottky

BJT/HBT

MOSCAP

Alam ECE-606 S09 3

 Threshold for Inversion
qN A x0 2κ oxε 0
VG ψ s +ψ s
κ oxε 0 qN A VG
qN A x0 2κ oxε 0
Vth 2φF + 2φF
κ oxε 0 qN A VG’ >VT’

l o 1g0QS (ψ S )
C / c2 m
+Q
Exposed
Acceptors
~ e− qψ S / 2 kBT ~ e qψ S / 2 kBT
-Q
~ ψS
Electrons

2φF Ψs(V)
4
 What happens when surface potential is 2φF ?

qN A x0 2κ oxε 0 EC
Vth 2φF + 2φF +qψs
κ oxε 0 qN A
Ei
( EF − Eis ) β EF
n1s = ni e Ei,s EV

( EF − Ei ( bulk ) ) β ( Ei ( bulk ) − Eis ) β

ni e ×e
−φF β ( Ei ( bulk ) − Eis ) β
= ni e e +Q
Exposed
Acceptors
−φF β 2φF β
n1s = ni e e -Q
Electrons
φF β
n=
i e NA Electron concentration equals
background acceptor concentration 5
A little bit about scaling ….

EC
qN A x0 2κ oxε 0
Vth 2φF + 2φF +qψs
κ oxε 0 qN A Ei
EF
Ei,s EV
Reduce Vth by …

Reducing oxide thickness +Q

(from 1000 A in 1970s Exposed
to 10 A now) Acceptors

-Q
Increase dielectric constant
(SiO2 historically, HfO2 now in Electrons
Intel Penryn)
Alam ECE-606 S09
Outline

1. Review

2. Induced charges in depletion and inversion

3. Exact solution of electrostatic problem

4. Conclusion

Alam ECE-606 S09 7

 Induced charges below Threshold

−φF β ( Ei ( bulk ) − E=
is ) β
qN A x0 2κ oxε 0
ψ s +ψ s
n1s = ni e
V
e G
κ oxε 0 qN A

qψ s β
≡ Be +qψs
EC
Ei
EF
l o 1g0QS (ψ S ) Ei,s EV
C / c2 m
+Q
− qψ S / 2 kBT qψ S / k BT
Exposed
~e ~e Acceptors

~ ψS -Q

Electrons
Ψs(V)
Alam ECE-606 S09 8
 Integrated charges below Threshold

EC
∞ ∞
Qi 2
n qψ ( x ) β +qψs
q ∫0=n ( x ) dx ∫0 N B e
i
dx
Ei
2 ∞
EF
n qψ ( x ) β 1 Ei,s EV
= ∫
NB 0
i
e
dψ
dψ

dx
∞
ni2 qψ ( x ) β 1
= ∫
NB 0
e
E ( x)
dψ

2 ∞ Qi QB
1 n
∫
qψ ( x ) β
≈ i
e dψ
E ( x) N B 0 Winv
 k BT 
  2
 q  × i e qψ s β ≡ W × n
n
Qs
E ( x)
inv s
NB
9
 Charges above Threshold
 Qi (ψ s ) + QF 
ψ s + Eox xo =
VG = ψs −   xo
 κ oxε 0 
 Q (2φ ) + QF 
VG Vth =2φF + Eox xo =2φF −  i F  xo
 κ oxε 0  VG

VG’ >VT’ Qi (ψ s ) − Qi (2φF )

VG − Vth = (ψ s − 2φF ) + xo
κ oxε 0
+Q
+ Exposed
Acceptors
Q
=Qi Cox (VG − Vth ) -Q
-Q
Electrons

Alam ECE-606 S09 10

Linear Charge Build-up Above Threshold?

log10 QS (ψ S )
VG

~ ψS
VG’ >VT’
~ 2φF

Ψs(V)
+ Exposed
Q Acceptors

• Small changes ψs in changes Qi a lot .. -Q

• Change in Qi changes Eox, because Eox=Qi/κ0e0 Electrons
• Vox is large because Vox=Eox x0, i.e. most of the
drop above 2ψF goes to Vox.
• Acts like a parallel plate capacitor, hence the inversion equation.
11
 Tunneling Current

EC
=
JT J s → g − J g → s
Qi (VG )e −∆EC β − qnm e −∆EC β e − qVox β  υth T
EF
=Qi (VG ) − qnm e − qVox β  υthT T ≡ e −∆EC β EG
EV

=J T Qi (VG ) − qnm e − qVG β  υth T ( E )

Alam ECE-606 S09 12

Outline

1. Review

2. Induced charges in depletion and inversion

3. Exact solution of electrostatic problem

4. Conclusion

Alam ECE-606 S09 13

 A step back: ‘Exact’ Solution of QS(ψS)

∇•D= ρ

( )
∇ • J n −q = (G − R)

( )
qψ S
∇ • J p q = (G − R) EC

EF
EG
dψ 2
−q EV
= 
 p ( x ) − n ( x ) + N +
− N −
A

dx 2
κ siε 0 0 0 D

qN A x0 2κ oxε 0 ψS > 0
=
Approximate … VG ψ s +ψ s
κ oxε 0 qN A
Alam ECE-606 S09 14
 Normalized Variable (to save some writing)…

EC ( x) = constant − qψ ( x)

EC ,bulk − EC ( x)
qψ (x) ψ ( x) =
qψ S ψ (x) = 0 q
ψ ( x) Ei (bulk ) − Ei ( x )
=u =
k BT / q k BT
qVG > 0
ψS Ei (bulk ) − Ei ( surface )
x =uS =
k BT / q k BT
φF Ei (bulk ) − EF
=uF =
k BT / q k BT

Alam ECE-606 S09 15

 Normalized Variable (to save some writing!)

qψ (x)
qψ S ψ (x) = 0
[ Ei ( x ) − EF ] β + (U F −U )
=p ( x) n=
ie ni e
qVG > 0 −[ Ei ( x ) − EF ] β − (U F −U )
=n( x) n=
i e ni e
x [E −E ]β
− (U F )
=N D+ n=
i e F i ,bulk
ni e
−[ E − E ]β
=N A− n=
i e F i ,bulk
ni e (U F )

Alam ECE-606 S09 16

 Poisson-Boltzmann Equation
d 2ψ −q
= 
 p ( x ) − n ( x ) + N +
− N −
A

κ sε 0
2 D
dx

q d 2U −qni  +(U F −U ) −(U F −U ) −U F

 ≡ g (U ,U F )
= e − e + n e − n eUF

κ sε 0  
2 i i
k B T dx
Can be evaluated
 dU  dU
2
 ni k BT   dU 
2  × =
−   g (U , U ) × 2  at any U
 dx  dx
2
κ ε
 s 0 
F
 dx 
2
d  dU  1  dU 
  dx = − 2 g (U , U F )  2  dx
dx  dx  2 LD  dx 
− qE ( x ) kT 2 U ( x)
 dU  1
∫
0
d  =− 2
 dx  LD ∫
0
g (U , U F )dU

Alam ECE-606 S09 17

 Exact Solution (continued)

− qE ( x ) kT 2 U ( x)
 dU  1
∫
0
d  = − 2
 dx  LD ∫
0
g (U , U F )dU

 qE ( x) 
2 U ( x)
1 F 2 (U , U F )
 kT  L2D ∫
0
g (U , U F )dU ≡
L2D

Compare …
k BT
Es = F (U S , U F ) qN A x0 2κ oxε 0
qLD =VG ψ s +ψ s
Vox κ oxε 0 qN A

κs  κ s k BT
ψ s +  Es  x0 =
VG = ψs + F (U s ,U F ) x0
 κ ox  κ ox qLD
Alam ECE-606 S09 18
 How does the calculation go …
2
 qE ( x) 
U ( x)
1 F 2 (U , U F )
 kT  L2D ∫
0
g (U , U F )dU ≡
L2D

κs κ s k BT
ψs +
VG = ψs +
Es x0 = F (U s , U F ) x0
κ ox κ ox qLD

Begin with a surface potential

Calculate Us and then divide Us by N points.

Calculate g(U, UF) at those points

and integrate to find F(Us,UF)

Find VG.
19
 Exact Solution…

Inversion (strong)

Accumulation Depletion Inversion (weak)

Alam ECE-606 S09 20
 “Exact” solution is not really exact …
d 2ψ −q  + −
= − ψ + −
2
p ( x ) n ( x ) ( x ) N N
ε 
D A
dx 2

qψ S EC wavefunction, not potential !

EF Wave function should be accounted for

EG
EV
Bandgap widening near the interface
must also should be accounted for.

Assumption of nondegeneracy may not

ψS > 0 always be valid

Alam ECE-606 S09 21

Conclusion

Our discussion today was focused on calculating the

induced charge in the depletion and inversion region as a
function of gate bias.

We found that we could calculate the tunneling current

from the inversion changes by using the thermionic
emission theory.

We also discussed the “exact” solution of the MOS-

capacitor electrostatics. The “exact” solution is
mathematically exact, but not necessarily physically exact
solution of the electrostatic problem.

Alam ECE-606 S09 22