Ic Technology

Review of IC Fabrication Technology
MICROELECTRONIC ENGINEERING
ROCHESTER INSTITUTE OF TECHNOLOGY
A Review of IC Fabrication Technology
Dr. Lynn Fuller

Webpage: http://people.rit.edu/lffeee
Microelectronic Engineering
Rochester Institute of Technology
82 Lomb Memorial Drive
Rochester, NY 14623-5604
Tel (585) 475-2035
Email: Lynn.Fuller@rit.edu
Department webpage: http://www.microe.rit.edu
Rochester Institute of Technology 3-3-2009 Technology.ppt

© March 3, 2009 Dr. Lynn Fuller, Professor Page 1

OUTLINE
§ Oxide Growth
§ Diffusion
§ Resistivity, Sheet Resistance, Resistance
§ Mobility
§ pn Junction
§ MOSFET Vt
§ Ion Implantation
§ Conclusion


OXIDE GROWTH
Original Silicon
Oxide Thickness Surface
Xox 0.46 Xox Silicon Consumed
PLAY


WET OXIDE GROWTH CHART

10
Xox ,(um)
0 0 C
13
0
10-1 120
0
110
0 00
1
900
10-2
1 10 t, Time, (min) 100
Microelectronic Engineering PLAY
DRY OXIDE GROWTH CHART

10
xox ,(um)
00 C
13
0
10-1 120
0
110
00 0
1
900
10-2
10 100 1,000
t, Time, (min)
OXIDE GROWTH CALCULATOR

ROCHESTER INSTITUTE OF TECHNOLOGY OXIDE.XLS ZIP
MICROELECTRONIC ENGINEERING 7/28/98
CALCULATION OF OXIDE THICKNESS LYNN FULLER
To use this spreadsheed change the values in the white boxes. The rest of the sheet is
protected and should not be changed unless you are sure of the consequences. The
calculated results are shown in the purple boxes.
CONSTANTS VARIABLES CHOICES

K 1.38E-23 J/K 1=yes, 0=no
(Bo/Ao) dry 5760000 µm/hr Temp= 1100 °C wet 1
Ea (dry) 2 eV time= 48 min dry 0
(Bo/Ao) wet 71000000 µm/hr <100>
Ea (wet) 1.96 eV Xint= 500 Å <111>
Bo dry 9.40E+02 µm2/hr
Ea (dry) 1.24 eV
Bo wet 250 µm2/hr
Ea (wet) 0.74 eV
CALCULATIONS:
Xox (Oxide thickness)=(A/2){[1+(t+Tau)4B/A^2]^0.5 -1} = 5788 Å
B = Bo exp (-Ea/KTemp) 0.484600523 µm2/hr

B/A = (Bo/Ao) exp (-Ea/KTemp) 4.64E+00 µm/hr
A 0.104407971 µm
Tau = (Xi2+AXi)/B 0.01593147 hr
Xox Oxide SiO2 Origional Silicon

Surface Prior to
Rochester Institute ofSilicon
Technology Oxide Growth
Microelectronic Engineering 0.46 Xox (silicon consumed)

OXIDE GROWTH EXAMPLES
1. Estimate the oxide thickness resulting from 50 min.

soak at 1100 °C in wet oxygen.
2. If 1000 Å of oxide exists to start with, what is

resulting oxide thickness after an additional 50 min.
soak at 1100 °C in dry oxygen.


DIFFUSION FROM A CONSTANT SOURCE
PLAY STOP
N(x,t) = No erfc (x/2 Dt ) N(x,t)

Solid
Solubility p-type
Limit, No
Wafer Background Concentration, NBC n-type
x
Xj into wafer

ERFC FUNCTION
10-0
Concentration/Surface Concentration = N/No

10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
0.0 1.0 2.0 3.0 4.0 α=x/ 4Dt
DIFFUSION CONSTANTS AND SOLID SOLUBILITY
DIFFUSION CONSTANTS
BORON PHOSPHOROUS PHOSPHOROUS BORON PHOSPHOROUS
TEMP DRIVE-IN PRE DRIVE-IN SOLID SOLID
SOLUBILITY SOLUBILITY
NOB NOP
900 °C 1.07E-15 cm2/s 2.09e-14 cm2/s 7.49E-16 cm2/s 4.75E20 cm-3 6.75E20 cm-3
950 4.32E-15 6.11E-14 3.29E-15 4.65E20 7.97E20
1000 1.57E-14 1.65E-13 1.28E-14 4.825E20 9.200E20
1050 5.15E-14 4.11E-13 4.52E-14 5.000E20 1.043E21
1100 1.55E-13 9.61E-13 1.46E-13 5.175E20 1.165E21
1150 4.34E-13 2.12E-12 4.31E-13 5.350E20 1.288E21
1200 1.13E-12 4.42E-12 1.19E-12 5.525E20 1.410E21
1250 2.76E-12 8.78E-12 3.65E-12 5.700E20 1.533E21
PLAY

TEMPERATURE DEPENDENCE OF DIFFUSION

CONSTANTS
Temperature Dependence: PLAY
D = D0 Exp (-EA/kT) cm2/sec k = 8.625E-5 eV/°K T in Kelvins
Boron D0 = 0.76 Phosphorous D0 = 3.85

EA = 3.46 EA = 3.66
Temperature Dependence of the Solid Solubility of

Boron and Phosphorous in Silicon
NOB = 3.5E17T + 1.325E20 cm-3 T in Celsius
NOP = 2.45E18T - 1.53E21 cm-3 T in Celsius


DIFFUSION FROM A LIMITED SOURCE
N(x,t) = Q’A(tp) Exp (- x2/4Dt)

π Dt
PLAY
for erfc predeposit
Q’A (tp) = QA(tp)/Area = 2 No (Dptp) / π = Dose
PLAY Where D is the diffusion constant

for ion implant predeposit at the drive in temperature and t is
the drive in diffusion time, Dp is
Q’A(tp) = Dose the diffusion constant at the
predeposit temperature and tp is the
predeposit time

DIFFUSION MASKING CALCULATOR
Select
Boron or Phosphorous
Enter
Temperature and Time


DIFFUSION MASKING
From: Hamilton and Howard


DIFFUSION AND DRIVE IN CALCULATIONS

Starting Wafer Resistivity Rho = 10 ohm-cm
Starting Wafer Type n-type = 1 1 1 or 0
p-type = 1 0 1 or 0
Pre Deposition Temperature 950 °C
Pre Deposition Time 15 min
Drive-in Temperature 1100 °C
Drive-in Time 480 min
CALCULATE VALUE UNITS

Solid Solubility at Temperature of Pre Deposition 4.65E+20 cm-3
Diffusion Constant at Temperature of Pre Deposition 3.93E-15 cm/sec
Diffusion Constant at Temperature of Drive-in 1.43E-13 cm/sec
CALCULATION OF DIFFUSION CONSTANTS

D0 (cm2/s) EA (eV)
Boron 0.76 3.46
Phosphorous 3.85 3.66
NOB = 3.5E17 (T) + 1.325E20
NOP = 2.45E18(T) - 1.53E21
CALCULATIONS VALUE UNITS

Substrate Doping = 1 / (q µmax Rho) 4.42E+14 cm-3
Ratio of Nsub/Ns = 9.51E-07
-u2
Approximate inverse erfc from erfc(u)~=e /(u(pi)^0.5) 3.47
RESULTS VALUE UNITS

xj after pre deposition =( (4Dp tp)^05)*(inv_erfc(Nsub/Ns)) 0.13 µm
Pre deposition Dose, QA= 2No (Dp tp/ π)^0.5 9.87E+14 atoms/cm2
xj after drive-in = ((4 Dd td/QA) ln (Nsub (πDdtd)^0.5))^0.5 4.03 µm
average doping Nave = Dose/xj 2.45E+18 atoms/cm3
mobility (µ)
Rochester at Doping
Institute equal to Nave
of Technology 109 cm2/V-s
Sheet Resistance = 1/(q
Microelectronic Engineering (µ(Nave))Dose) 58 ohms
Surface Concentration After Drive-in = Dose/ (pDt)^0.5 8.68E+18 cm-3

DIFFUSION FROM A LIMITED SOURCE
GIVEN VALUE UNITS

Starting Wafer Resistivity Rho = 10 ohm-cm
Starting Wafer Type n-type = 1 1 1 or 0
p-type = 1 0 1 or 0
Pre Deposition Ion Implant Dose 4.00E+15 ions/cm2
Drive-in Temperature 1000 °C

Drive-in Time 360 min
CALCULATE VALUE UNITS

Diffusion Constant at Temperature of Drive-in 1.43E-14 cm/sec
CALCULATION OF DIFFUSION CONSTANTS

D0 (cm2/s) EA (eV)
Boron 0.76 3.46
Phosphorous 3.85 3.66
CALCULATIONS VALUE UNITS

Substrate Doping = 1 / (q µmax Rho) 4.42E+14 cm-3
RESULTS VALUE UNITS

Pre deposition Dose 4.00E+15 atoms/cm2
xj after drive-in = ((4 Dd td/QA) ln (Nsub (π Ddtd)^0.5))^0.5 1.25 µm
average doping Nave = Dose/xj 3.21E+19 atoms/cm3
mobility (µ) at Doping equal to Nave 57 cm2/V-s
Sheet Resistance = 1/(q (µ(Nave))Dose) 27.6 ohms
Surface Concentration = Dose/ (pDt)^0.5 1.28E+20 cm-3


DIFFUSION EXAMPLES
1. A predeposit from a p-type spin-on dopant into a 1E15 cm-3

wafer is done at 1000°C for 10 min. Calculate the resulting
junction depth and dose.
2. The spin-on dopant is removed and the Boron is driven in

for 4 hours at 1100 °C. What is the new junction depth?


RESISTANCE, RESISTIVITY, SHEET RESISTANCE
Resistance = R = ρ L/Area = ρs L/w ohms
Resistivity = ρ = 1/( qµnn + qµpp) PLAY ohm-cm
Sheet Resistance = ρs = 1/ ( q µ(N) N(x) dx) ~ 1/( qµ Dose) ohms/square

PLAY ρs = ρ / t I
q = 1.6E-19 coul slope = 1/R
L Area
w
t
V
R

EXACT CALCULATION OF CARRIER CONCENTRATIONS
B 1.11E+03
h 6.63E-34 Jsec Nd = 3.00E+16 cm-3 Donor Concentration
εo 8.85E-14 F/cm Ed= 0.049 eV below Ec
εr 11.7 Na = 8.00E+15 cm-3 Acceptor Concentration
ni 1.45E+10 cm-3 Ea= 0.045 eV above Ev
Nc/T^3/2 5.43E+15
Nv/T^3/2 2.02E+15 Temp= 300 °K
Donor and Acceptor Levels (eV above or below Ev or Ec)

Boron 0.044
Phosphorous 0.045
Arsenic 0.049
CALCULATIONS: (this program makes a guess at the value of the fermi level and trys to minimize
the charge balance)
KT/q 0.026 Volts
Eg=Ego-(aT^2/(T+B)) 1.115 eV
Nc 2.82E+19 cm-3
Nv 1.34E+01 cm-3
Fermi Level, Ef 0.9295 eV above Ev
free electrons, n = Nc exp(-q(Ec-Ef)KT) 2.17E+16 cm-3
Ionized donors, Nd+ = Nd*(1+2*exp(q(Ef-Ed)/KT))^(-1) 2.97E+16 cm-3
holes, p = Nv exp(-q(Ef-Ev)KT) 3.43E-15 cm-3
Ionized acceptors, Na- = Na*(1+2*exp(q(Ea-Ef)/KT))^(-1) 8.00E+15 cm-3
Charge Balance = p + Nd+ - n - Na- 3.22E+12 cm-3
Rochester Institute of Technology Click on Button to do Calculation

Microelectronic Engineering Button
Button

RESISTIVITY OF SILICON VS DOPING
1021
Impurity Concentration, N, cm-3
1020 ρ = 1/(qµ(N)N)
1019
1018 Because µ is a function of N

Boron and N is the doping, the
1017 relationship between resistivity
ρ and N is given in the figure
1016
shown, or calculated from
Phosphorous
1015 equations for µ(N)
1014
1013
10-4 10-3 10-2 10-1 100 101 102 103 104
PLAY
Resistivity, ohm-cm

ELECTRON AND HOLE MOBILITY
1600 PLAY
Mobility (cm2/ V sec)
1400
1200 electrons Electron and hole mobilities
1000 in silicon at 300 K as
Arsenic
Boron
functions of the total dopant
800 Phosphorus
concentration (N). The
600 values plotted are the results
400 of the curve fitting
200 holes measurements from several
0 sources. The mobility curves
can be generated using the
equation below with the
3
0
5
7
^1
^1
^1
^1
^2
^1
^1
^1
parameters shown:
10
10
10
10
10
10
10
10
Total Impurity Concentration (cm-3) (µmax-µmin)

PLAY µ(N) = µ mi+
{1 + (N/Nref)α}
Parameter Arsenic Phosphorous Boron
From Muller and Kamins, 3rd Ed., pg 33 µmin 52.2 68.5 44.9
Rochester Institute of Technology µmax 1417 1414 470.5
Microelectronic Engineering Nref 9.68X10^16 9.20X10^16 2.23X10^17
α 0.680 0.711 0.719
TEMPERATURE EFFECTS ON MOBILITY
Derived empirically for silicon for T in K between 250 and 500 °K and for
N (total dopant concentration) up to 1 E20 cm-3
1250 Tn-2.33
µn (T,N) = 88 Tn-0.57 +
1 + [ N / (1.26E17 Tn 2.4 )] ^0.88 Tn -0.146
PLAY
407 Tn -2.33
µp (T,N) = 54.3 Tn-0.57 +
1 + [ N / (2.35E17 Tn 2.4 )]^ 0.88 Tn -0.146
Rochester Institute of Technology Where Tn = T/300

From Muller and Kamins, 3rd Ed., pg 33
EXCELL WORKSHEET TO CALCULATE MOBILITY
MICROELECTRONIC ENGINEERING 3/13/2005
CALCULATION OF MOBILITY Dr. Lynn Fuller
To use this spreadsheed change the values in the white boxes. The rest of the sheet is
protected and should not be changed unless you are sure of the consequences. The
calculated results are shown in the purple boxes.
CONSTANTS VARIABLES CHOICES

Tn = T/300 = 1.22 1=yes, 0=no
Temp= 365 °K n-type 1
N total 1.00E+18 cm-3 p-type 0
<100>
Kamins, Muller and Chan; 3rd Ed., 2003, pg 33

mobility= 163 cm2/(V-sec)


EXCELL WORKSHEET TO CALCULATE RESISTANCE


ION IMPLANT EQUATIONS
Gaussian Implant Profile

after implant
N’ -(X-Rp)2
N(x) = exp [ ]
concentration cm-3
2π ∆Rp 2∆Rp2 after anneal at
950 C, 15 min
Rp = Range
∆Rp = Straggle } From Curves Ni Approximation
I used in Vt
N’ = Dose = mqA dt calculations
After Anneal
N’ -(X-Rp)2 x
N(x) = 2π ∆Rp2 + 2Dt exp [ 2(∆Rp2+Dt) ] xi
Approximation
where D is diffusion constant at the anneal temperature N’ = Ni xi
t is time of anneal
ION IMPLANT RANGE
1
Projected Range, Rp ,(um)
As
10-1
10-2 Sb
10 100 1,000
Implantation Energy (KeV)
PLAY
ION IMPLANT STANDARD DEVIATION
Standard Deviation, ∆Rp ,(um)
0.1
P
0.01
As
Sb
0.001
10 100 1,000
Implantation Energy (KeV)
PLAY
ION IMPLANT MASKING CALCULATOR
Rochester Institute of Technology Lance Barron

Microelectronic Engineering Dr. Lynn Fuller
11/20/2004
IMPLANT MASK CALCULATOR Enter 1 - Yes 0 - No in white boxes
DOPANT SPECIES MASK TYPE ENERGY

B11 1 Resist 0 60 KeV
BF2 0 Poly 1
P31 0 Oxide 0
Nitride 0
Thickness to Mask >1E15/cm3 Surface Concentration 4073.011 Angstroms
This calculator is based on Silvaco Suprem simulations using the Dual Pearson model.
In powerpoint click on spread sheet to change settings for a new calculation

Microelectronic Engineering Lance Baron, Fall 2004
REFERENCES
1. Basic Integrated Circuit Engineering, Douglas J. Hamilton, William

G. Howard, McGraw Hill Book Co., 1975.
2. Micro Electronics Processing and Device Design, Roy a. Colclaser,
John Wiley & Sons., 1980.
3. Device Electronics for Integrated Circuits, Richard S. Muller,
Theodore I. Kamins, Mansun Chan, John Wiley & Sons.,3rd Ed., 2003.
4. VLSI Technology, Edited by S.M. Sze, McGraw-Hill Book
Company, 1983.
5. Silicon Processing for the VLSI Era, Vol. 1., Stanley Wolf, Richard
Tauber, Lattice Press, 1986.
6. The Science and Engineering of Microelectronic Fabrication, Stephen
A. Campbell, Oxford University Press, 1996.


HOMEWORK - REVIEW OF IC TECHNOLOGY
1. If a window is etched in 5000 Å of oxide and the wafer is oxidized again for 50 min in wet
O2 at 1050 °C what is the new thickness (where it was 5000 Å), the thickness in the etch
window, and the step height in the silicon if all the oxide is etched off the wafer. Draw a
picture showing original Si surface.
2. A Boron diffusion is done into 5 ohm-cm n-type wafer involving two steps. First a short
predeposit at 950 C for 30 min., followed by removal of the diffusion source and a drive in at
1100 C for 2 hours. Calculate the junction depth and the sheet resistance of the diffused layers.
Estimate the oxide thickness needed to mask this diffusion.
3. For a pn junction with the p side doping of 1E17 and the n side at 1E15 calculate, width of
space charge layer, width on p side, on n side, capacitance per unit area, max electric field.
4. Calculate the threshold voltage for an aluminum gate PMOSFET fabricated on an n-type
wafer with doping of 5E15, a surface state density of 7E10, and gate oxide thickness of 150 Å.
What is the threshold voltage if the surface state density is 3E11?
5. Calculate the ion implant dose needed to shift the threshold voltage found in the problem
above to -1 Volts.

HOMEWORK - EXACT CALCULATION OF SHEET

RESISTANCE FOR A DIFFUSED LAYER
1. A Boron p-type layer is diffused into an n-type silicon wafer
(1E15 cm-3) at 1100 °C for 1 hour. Calculate the exact value of the
sheet resistance and compare to the approximate value.
Sheet Resistance = ρs = 1/ ( q µ(N) N(x) dx) ~ 1/( qµ Dose) ohms/square
(µmax-µmin) Let Q’ A(tp) = 5.633E15 cm-2

µ(N) = µ min + D= 1.55E-13 cm2/s
{1 + (N/N ) α} t = 1 hour
for Boron ref
µmin 44.9
µmax 470.5
Nref 2.23X10^17
α 0.719
N(x,t) = Q’A(tp) Exp (- x2/4Dt)
π Dt
HW SOLUTION - EXACT CALCULATION OF SHEET

RESISTANCE FOR A DIFFUSED LAYER
Divide the diffused layer up into 100 slices and for each slice find
the doping and exact mobility. Calculate the sheet resistance from
the reciprocal of the sum of the conductance of each slice.
N(x)
NBC
x
xj

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Review of IC Fabrication Technology

A Review of IC Fabrication Technology

Dr. Lynn Fuller

Rochester Institute of Technology 3-3-2009 Technology.ppt

© March 3, 2009 Dr. Lynn Fuller, Professor Page 1

Rochester Institute of Technology

© March 3, 2009 Dr. Lynn Fuller, Professor Page 2

Rochester Institute of Technology

© March 3, 2009 Dr. Lynn Fuller, Professor Page 3

WET OXIDE GROWTH CHART

DRY OXIDE GROWTH CHART

OXIDE GROWTH CALCULATOR

CALCULATION OF OXIDE THICKNESS LYNN FULLER

CONSTANTS VARIABLES CHOICES

Xox (Oxide thickness)=(A/2){[1+(t+Tau)4B/A^2]^0.5 -1} = 5788 Å

B = Bo exp (-Ea/KTemp) 0.484600523 µm2/hr

Xox Oxide SiO2 Origional Silicon

© March 3, 2009 Dr. Lynn Fuller, Professor Page 6

OXIDE GROWTH EXAMPLES

1. Estimate the oxide thickness resulting from 50 min.

2. If 1000 Å of oxide exists to start with, what is

Rochester Institute of Technology

© March 3, 2009 Dr. Lynn Fuller, Professor Page 7

DIFFUSION FROM A CONSTANT SOURCE

N(x,t) = No erfc (x/2 Dt ) N(x,t)

Wafer Background Concentration, NBC n-type

© March 3, 2009 Dr. Lynn Fuller, Professor Page 8

Concentration/Surface Concentration = N/No

DIFFUSION CONSTANTS AND SOLID SOLUBILITY

© March 3, 2009 Dr. Lynn Fuller, Professor Page 10

TEMPERATURE DEPENDENCE OF DIFFUSION

Temperature Dependence: PLAY

D = D0 Exp (-EA/kT) cm2/sec k = 8.625E-5 eV/°K T in Kelvins

Boron D0 = 0.76 Phosphorous D0 = 3.85

Temperature Dependence of the Solid Solubility of

Rochester Institute of Technology

© March 3, 2009 Dr. Lynn Fuller, Professor Page 11

DIFFUSION FROM A LIMITED SOURCE

N(x,t) = Q’A(tp) Exp (- x2/4Dt)

PLAY Where D is the diffusion constant

© March 3, 2009 Dr. Lynn Fuller, Professor Page 12

DIFFUSION MASKING CALCULATOR

Rochester Institute of Technology

© March 3, 2009 Dr. Lynn Fuller, Professor Page 13

From: Hamilton and Howard

© March 3, 2009 Dr. Lynn Fuller, Professor Page 14

DIFFUSION AND DRIVE IN CALCULATIONS

CALCULATE VALUE UNITS

CALCULATION OF DIFFUSION CONSTANTS

CALCULATIONS VALUE UNITS

RESULTS VALUE UNITS

© March 3, 2009 Dr. Lynn Fuller, Professor Page 15

DIFFUSION FROM A LIMITED SOURCE

GIVEN VALUE UNITS

Pre Deposition Ion Implant Dose 4.00E+15 ions/cm2

Drive-in Temperature 1000 °C

CALCULATE VALUE UNITS

CALCULATION OF DIFFUSION CONSTANTS

CALCULATIONS VALUE UNITS

RESULTS VALUE UNITS

Rochester Institute of Technology

© March 3, 2009 Dr. Lynn Fuller, Professor Page 16

1. A predeposit from a p-type spin-on dopant into a 1E15 cm-3

2. The spin-on dopant is removed and the Boron is driven in