Transistors

2SC2634
Silicon NPN epitaxial planar type

For low-frequency and low-noise amplification Unit: mm

Complementary to 2SA1127 5.0±0.2 4.0±0.2

5.1±0.2
■ Features
• Low noise voltage NV
• High forward current transfer ratio hFE

0.7±0.2
0.7±0.1

12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
0.45+0.15
–0.1 0.45+0.15
–0.1
Collector-base voltage (Emitter open) VCBO 60 V
2.5+0.6
–0.2 2.5+0.6
–0.2
Collector-emitter voltage (Base open) VCEO 55 V
1 2 3 1: Emitter
Emitter-base voltage (Collector open) VEBO 7 V 2: Collector

2.3±0.2
Collector current IC 100 mA 3: Base
EIAJ: SC-43A
Peak collector current ICP 200 mA TO-92-B1 Package
Collector power dissipation PC 400 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 55 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Base-emitter voltage VBE VCE = 1 V, IC = 30 mA 1 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 1 100 nA
Collector-emitter cutoffcurrent (Base open) ICEO VCE = 10 V, IB = 0 0.01 1.00 µA
Forward current transfer ratio * hFE VCE = 5 V, IC = 2 mA 180 700 
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.6 V
Transition frequency fT VCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz
Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700

Publication date: March 2003 SJC00119BED 1

2SC2634

PC  Ta IC  VCE IC  VBE
500 120 120
IB = 400 µA Ta = 25°C 25°C VCE = 5 V
350 µA 300 µA
Collector power dissipation PC (mW)

100 100
400 Ta = 75°C −25°C
250 µA

Collector current IC (mA)

Collector current IC (mA)

80 80
200 µA
300

60 150 µA 60

200
40 100 µA 40

100 50 µA
20 20

0 0 0
0 40 80 120 160 200 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I E
100 1 000 400
IC / IB = 10 VCB = 5 V
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 5 V
Ta = 25°C
Forward current transfer ratio hFE

Transition frequency fT (MHz)

800
10 300

600

1 Ta = 75°C 200

400 25°C
−25°C
Ta = 75°C
0.1 25°C 100
200
−25°C

0.01 0 0
0.1 1 10 100 0.1 1 10 100 −1 −10 −100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob  VCB NF  IE NV  IC
10 8 120
C (pF)

IE = 0 VCE = 10 V
f = 1 MHz VCE = 5 V GV = 80 dB
Rg = 1 kΩ
(Common base, input open circuited) ob

Ta = 25°C Function = FLAT

8 Ta = 25°C 100
6
Noise voltage NV (mV)
Noise figure NF (dB)

80
Rg = 100 kΩ
6
Collector output capacitance

4 60

4 f = 100 Hz 22 kΩ
40
2 5 kΩ
2 1 kHz
20
10 kHz
0 0 0
1 10 100 −10 −100 −1 000 0.01 0.1 1
Collector-base voltage VCB (V) Emitter current IE (µA) Collector current IC (mA)

2 SJC00119BED
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2002 JUL
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