L'ONDE ÉLECTRIQUE

THE TRANSISTRON TRIODE TYPE P.T.T. 601

BY
R. SUEUR
Chief Engineer P.T.T.
Head of the Department of Service des Recherches et du Contrôle Techniques P.T.T.
Translation into English Copyright Mark P D Burgess March 2011

On Wednesday, May 18, 1949, the Minister of
P.T.T. presided over the presentation of the
Transistron triode P.T.T. 601 and some instruments
equipped with this device at the laboratories of
Service des Recherches et du Contrôle Techniques
(S.R.C.T.) of P.T.T.
It was similar to a presentation held in America
at Bell Telephone Laboratories in 1948.
Work on semiconductors conducted in France in
recent years in collaboration between the
Administration des PTT and the Société des Freins
et Signaux Westinghouse has produced similar
results to those of the Americans. Building on
previous work, Doctors Welker and Matare and a
team of researchers prepared germanium of high
resistivity and started manufacturing high back
voltage detectors, a prelude to the development of
the of germanium triode or Transistron triode.
During the same year the first germanium
Transistrons manufactured in France left the
Laboratories. In French we could call this device
“transistance” which is the literal translation of the
American term “transistor.” However transistance
in French would be like resistance, an electrical
quantity. Thus we have the name “Transistron”, or
resistance of transfer, the suffix “tron” indicating
active elements involving electrons or ions.
1o Semiconductors
At room temperature, solids can be divided into
three classes according to their electric
conductivity.
- Conductors
- Insulators
- Semiconductors
The phenomenon of conductivity is related to the
electronic organization of atoms of the material
being considered, the organization of its crystal
lattice and its physical crystalline imperfections and
chemical properties.
We know that the latest theories on the
constitution of matter shows the atom consists of a
central nucleus and electrons with fixed energy
levels. Of these electrons, we distinguish two
kinds: electrons bound to atoms and free electrons.
The energy of a bound electron is insufficient for
it to separate from its atom and its energy is
quantized.
The energy of a free electron is sufficient for it to
be separated from its atom and its energy is not
quantized.
According to the Pauli exclusion principle which
states that “In an atom there cannot be two
electrons defined by the same quantum
coordinates” (1) it is not possible to have several
electrons with the same energy in an atom. We say
that each electron has a defined “energy level” and
that energy level can vary by a quantum jump
under the influence of X-rays, for example.
We know that this quantum energy is equal to dw
dw = h v
where h is Planck's universal constant equal
Fig. 1
Unit cell of Ge. All other Projection on a horizontal
atoms in the network are plane, the atoms num-
inferred from these by bered in the unit cell.
translations ha1 + ka2 + la3
to 6.55 10-27 erg sec. and v is the frequency of the
electromagnetic wave radiated in the quantum
jump of the electron.
Germanium is the 32nd element in the
Mendeleev table normally with 32 electrons around
its nucleus.
The atoms form a solid body in a simple
arrangement known as a three dimensional crystal
lattice. Fig. 1 gives the example of the theoretical
crystal lattice for germanium.
In the crystal lattice of a particular solid there
may be free lattice electrons liberated from atoms
that are chemical impurities or from atoms of the
material itself occupying energy levels. In a
structure without impurities or physical defects
energy levels are grouped into bands and each band
(1) There are four quantum coordinates: n, l, m, s
n: characterizes the position of the electron, between 1 and 7
l: is related to the momentum
m: is the magnetic quantum number
s: is the quantum number that characterizes the spin
 L'ONDE ÉLECTRIQUE
can generally be understood to have a maximum of
twice as many levels as there are atoms in the
crystal lattice according to the Pauli exclusion
principle.
Several bands may exist and they are separated
by regions called "forbidden bands" where there
cannot be any electrons. A full band has all levels
occupied by electrons and an empty band has no
electrons. The higher energy bands are occupied by
electrons of high kinetic energy (Fig. 2).
At room temperature a solid conductor has its
higher energy bands partially filled with electrons,
thus an electric field applied to the conductor easily
causes a change of electron energy levels in this
band and this explains the high conductivity of con-
ductors. At absolute zero they still have electrons in
the upper band.
On the other hand insulators have no electrons in
their upper bands, their lower bands are filled and
the forbidden bands may be several electron volts.
A very intense electric field can only move the
low-energy electrons from the lower bands with
great difficulty. The electrons would have to move
from one energy band to another and this is very
unlikely. Thus the conductivity of insulators is very
low. At absolute zero, there are no electrons in the
upper band.
Semiconductors are intermediary materials, their
higher energy band is empty and lower band is
filled. Between these the bands are partially filled,
and unlike insulators the energy difference between
the empty band above and the full band below is
quite low. At room temperature, they have very low
conductivity. At absolute zero they are insulators
and their temperature coefficient is negative.
There are two types of semiconductors. The first
is known as "intrinsic" such as pure germanium and
the second is known as "extrinsic" and is the result
of physical defects or chemical impurities in the
crystal structure of intrinsic semiconductors.
According to their type these impurities may
receive or donate electrons in the semiconductor
and they create additional energy levels that
increase the conductivity.
The very low conductivity of intrinsic
semiconductors at room temperature (10 ~ 2 mho /
cm for germanium) make them unsuitable for
practical applications.
We say an extrinsic semiconductor is N or P type
depending on whether the impurities add or donate
electrons in the crystal lattice and it appears to be a
function of the chemical valency of the intrinsic
semiconductor relative to the impurities.
Thus phosphorus and antimony produce an N-
type germanium extrinsic semiconductor and boron
and aluminum make a P-type silicon extrinsic
semiconductor. Copper oxide Cu2O is a P-type
extrinsic semiconductor.
When impurity atoms are inserted in an intrinsic
semiconductor two cases may occur:
-The valency of the impurities is less than that of
the intrinsic semiconductor. In this case, if an
impurity atom takes the place of an atom in the
crystal lattice, one or more electrons in the
semiconductor can simply fill the vacant bond
leaving a hole in the band they leave.
This hole can be treated as a charge of equal and
opposite sign to the electron. It causes the
appearance of an energy level related to the
corresponding band.
-The valency of the impurities is greater than that
of the intrinsic semiconductor. In this case the
impurity atoms promote electrons in the permitted
bands and they are found to have energy levels in
the band gap.
These respective energy levels are located close
to the boundary (0.1 eV.) of the normal bands and
increase the conductivity of the body.
In the first case conduction is caused by pseudo
electrons, as though positive electrons were
involved and in the second case the conduction is
electronic.
The type and quality of a semiconductor is
conveniently determined by the Hall effect.
A strip of material M simultaneously subjected
to the influence of a magnetic field H normal to its
thickness e and a longitudinal electrical current I
causes a transverse emf E (Fig. 3).
For a body at temperature θ the quantities H, e, I,
E are connected by the expression:
 L'ONDE ÉLECTRIQUE

where R is called the “Hall coefficient” named after In addition the measurement of σ and R allows
the physicist Hall who demonstrated this effect in the calculation of b:
1879.
With the direction given to the current I and the
field H, the emf E can appear positively or
and consequently that of l.
negatively oriented.
Knowledge of these different quantities is
This sign has a direct impact on the coefficient of
essential to define the best properties of
R and depends on the material subjected to the
semiconductors, the existing methods of chemical
experiment. Electronic conductive bodies have a
and spectrographic analysis being insufficient to
negative Hall coefficient, (N type); those
make an adequate determination of impurities.
conductive by holes have a positive coefficient (P-
In addition, defects in the crystal structure have a
type).
huge influence on the behavior of semiconductors
In general, germanium at room temperature has
and these defects have an impact on their physical
electronic conductivity.
properties, particularly on mobility.
The value of R can be between 10-7 and about
For different kinds of French N type germanium
10-4 for germanium.
The origin of the Hall Effect can be explained by
the deviation of the trajectories of free electrons
liberated by the electric current by the magnetic
field.
The sign of the Hall coefficient enables the
determination of the type of conductivity of the
material and its magnitude:
- The number of conducting electrons per unit
volume.
- The mean free path of electrons.
- Their mobility.
The conductivity, σ, of a semiconductor with
conductivity due to electrons or holes is given by at room temperature, typical data is given in the
the expression: following table:

where: e = charge of an electron

l = mean free path of electrons or holes
N = number of liberated electrons or holes
per unit volume
m = electron mass
k = Boltzmann constant
T = absolute temperature.
The mobility, b, of a stream of electrons or holes
is defined as the speed of the electron or
hole in a unit electric field.

where:

The height of the barrier layers of a rectifier is

more pronounced when the mobility is lower.
Figure 4 shows equipment for measuring the Hall
The theory of solid bodies permits us to write: coefficient.

Germanium was discovered in 1886 by the German

chemist Winkler.

It is available from several sources:

Thus measurement the Hall coefficient, R, allows a) Naturally, from germanite, pyrite
the calculation of N
 L'ONDE ÉLECTRIQUE
comprising 30 to 40% copper and 1 to 4%
germanium, the richest deposits are located in
South-West Africa near Tsumeb. They are in the
form of pockets that seem to accompany deposits
of zircon. It is also found in some argyrodites.
Pyrite containing up to 1% in deposits have been
found near Freiberg (Saxony).
It is also contained in some sulfur coals, such as
those of Durham.
b) As a metallurgical by product from the
processing of zinc and cadmium.
The crude germanium does not generally have a
suitable chemical composition nor a homogeneous
structure.
It still must undergo physical and chemical
treatment to give suitable P or N type
characteristics and resistivity appropriate to the
required end use.
Figure 5 shows a germanium processing facility.
2° Contact between a conductor and a volume and located at a certain energy level above
semiconductor.
It is known that two different materials in contact
with one another create a potential difference in the
vicinity of the point of contact called the "contact
potential difference" related to the difference in the
work function of electrons in each material.
The work function is the work done to remove an
electron from the body and make it free. The work
function xn in a extrinsic semiconductor depends on
the level of impurities found there. The difference
in work function between a metal and a
semiconductor is about 0.2 to 0.5 eV.
Formulas for the difference in work function
were given by Fowler for different cases. For an
extrinsic semiconductor that is:
TYPE N
Weak ionisation (n1 ≤ N1)
Strong ionisation (n2 ≈ N1)
TYPE P
Weak ionisation (n2 ≤ N2)
Strong ionisation (n2 ≈ N2)
where:
v = is a function of (h, k, T, n);
e = Electron charge;
ʋ = Contact potential difference;
xs =Work function of the semiconductor;
xm = Work function of metal;
k = Boltzmann constant;
T = Absolute temperature;
N1 = Number of donator energy levels per unit
volume, located a level below the band gap.
n1= number of electrons excited to the empty band
per unit volume.
N2 = number of acceptor energy levels per unit
the full band.
n2 = number of free holes [in the full band] per unit
volume.
The difference in contact potential causes the
emergence of barrier potentials located in the
vicinity of the surfaces in contact. Between these
barriers there is an area known as insulating barrier
layer with high dielectric constant.
Explanations on the formation and existence of
barrier potentials have been given by many authors
(Schottky, Mott etc). They refer to the difference of
work function that is to say the difference in energy
levels that may exist between the two bodies
involved. Following the conventional
representation, Figure 6 indicates the position of
the bands and energy levels that exist in the vicinity
of the surface of a metal and an N-type
semiconductor before and after contact.
In the semiconductor energy levels of electrons
created by the impurities are located around the
normally empty upper band and they are higher
than the upper band, of the conductor.
When contact is made it is found that the
electrical current flows more easily in the direction
 L'ONDE ÉLECTRIQUE
of "conductor to semiconductor” than in the
opposite direction.
At the moment of contact we can say that
because of the difference in the energy of the
electrons from each material involved, the electrons
of the semiconductor migrate to the conductor
allowing a positive surface layer to form on the
surface of the semiconductor while a negative layer
forms in the conductor; a double potential barrier is
thus formed, and between them appears the barrier
layer.
An electric potential difference moves the high-
energy electrons more easily from the
semiconductor to the conductor and direct current
flow in the easy direction is observed.
This overview of the probable mechanism of
formation of potential barriers and barrier layers
does not give an accurate view and the theory is
incomplete. But note that the difference in
conductivity caused by the direction of flow of an
electric current in a contact between a conductor
and a semiconductor is exploited in detectors and is
one of physical phenomena seen in the Transistron.
The most recent solid state theories and
experimental results indicate that the barrier layer
has a thickness of about 10-4 mm.
In a P-type extrinsic semiconductor equilibrium
is established differently. (Fig. 7).
Upon contact, the holes arising from the partially
filled band flow from the semiconductor to the
conductor, creating a positive barrier and allowing
a negative barrier to form in the semiconductor.
The overall conductivity is not electronic and it can
be seen that the easy flow of electric current is from
semiconductor to conductor. [See translator’s
notes]
3° Operation of the Transistron (Fig. 8)
N-type high resistivity germanium was polished
and then etched with acid to expose a suitable
crystalline surface structure which was then
chemically treated to make (or enhance) a P type
semiconductor layer. Wire point contacts of bronze,
tungsten or molybdenum were then positioned on
this surface.
It is found that the forward direction of current
flow is observed for N-type semiconductors.
Then apply an electric current (I) of 1-2
milliamps in the forward direction that is in the
direction "from the contacts towards the
semiconductor." It appears that the electrical
conductivity around the point contact depends on
the value of I (current). This is the second
phenomenon called transistance used in the
Transistron.
If we then place a second contact on this surface
at a distance d from 20 to 50 microns from the first,
we see that the resistance R measured between the
two points depends on I according to a law given
qualitatively in Figure 9.
We also know that an amplifier is essentially an
energy valve where the energy ratio Ws/Wc between
energy output Ws released by a valve and the input
and control energy, Wc, is larger than unity.
Now arrange the assembly of Figure 10 where
 L'ONDE ÉLECTRIQUE

the direct current IE is of the order of a milliampere,

the variable resistor r a few hundred ohms, a
battery p of voltage e of 1-2 volts. Point “a” is the
control point and the resistance of the layer is
around a few tens of thousands of ohms. Where we define:

A very high voltage E (50 to 100 volts) is applied
through a resistance R (20,000 to 30,000 ohms) to
the point “c” in the reverse direction so the
resistance of the semiconductor is very large. We
note that the current Is depends on IE and the
current Is must certainly flow in the layer between
the points "a" and "c". The valve is then
represented by the resistance of the layer, it is
controlled by the current IE and it is found that the
control power required is much less than that which
appears in the output resistance, Rs.
The magnitude of the input to output power ratio
given by
can now reach 100 to 200 and output power Ws is
of the order of several tens of milliwatts.
Explanations or physical phenomenon of
variation of surface conductivity attributed to the P
layer and the bulk N semiconductor as a function of
RE = input resistance,
Rr = feedback resistance between the output and
input
Rc= coupling resistance which loads the voltage
gain of the circuit
Rs = output resistance.
These two equations allow us to establish the
following equivalent circuit (Fig. 12).
Where:
where by applying the Thevenin Theorem we
readily obtain from the schematic in Figure 11:
R1 = R E - Rr
R2 = R r
R3= Rs - Rr
Es = (Rc- Rr) dIE
The family of curves in Figure 13 found for a
type 601 Transistron shows, as might be expected,
(see fig. 9) that Is increases with IE.

the polarization of the control electrode are

provided by Bardeen and Brattain (see
bibliography) and we refer the reader to articles of
these authors. The calculations and tests conducted
in France so far seem to confirm the role of a layer
where the conductivity occurs by pseudo electrons
[holes]. Their verification require the
implementation of very difficult procedures,
particularly the precise measurements of inter-
electrode capacity.
An electrical equivalent circuit most convenient
in our opinion for the Transistron follows (Fig. 11).
It results from the mathematical analysis of the
operation of the Transistron.
Furthermore the voltage
One can propose the following equations where
Er = Rr dIs
the parameters correspond to the four elements of
is the load voltage.
the equivalent circuit.
 L'ONDE ÉLECTRIQUE

We can now establish a convenient method for
calculating the various characteristics of an
amplifier in terms of the previously defined
variables.
Place the Transistron between an EMF generator
where e = E(sinωt) for example and input
impedance RG and output impedance equal to RR.
Figure14 shows the equivalent circuit in this case
excluding the bias circuits.
For RG ≠ ZE the first term is negative and the
second for RE ≠ Rs, they are equal to zero for:
R G = ZE
RE = R s
For good power gain the source and output
impedance should be matched to ZE and Rs.
respectively and the gain will be:

Around an operating point identified in Figure 13

and defined by
For convenience of calculation we put:
UE ≈ + 0.35 volt
Us ≈ -45 volts

We find for the Transistron 601 the following key

characteristics:

RE ≈ 170 ohms
Rr ≈ 70 ohms
Rc ≈ 30,000 ohms
Rs ≈ 20,000 ohms

Which gives the equivalent circuit in figure 15.

And then we find:

a) Input impedance ZE
ZE = RE (1- μβ)

b) Ouput impedance Zs

Zs = Rs + Rr (1- μoβ) ≈ Rs
We find for RR = Rs and RG = ZE
c) The voltage gain in Nepers
μo = 30,000/170 = 176
μ = 176/2 = 88
β = 3.5 10-3
μβ = 0.308
ZE = 170 (1 – 0.308) ≈ 188 ohms
Zs = 20,000 ohms
Gt ≈ 5.5 Nepers
If RR is very large GoM ≈ 5.15 – 2.38 – 0.1 ≈ 2.7 Nepers ≈ 24.5 dB

We note in passing that Transistron is a very

d) The overall gain in Nepers
good voltage amplifier.
Circuits for measuring Transistron gain are
easily deduced from the definitions.
The overall stage gain of the Transistron is
related to the input and output transformers.
 L'ONDE ÉLECTRIQUE

4° Making Transistrons.

The key to the production Transistrons lies in the -A 4 Transistron television video amplifier
preparation of germanium, in the selection of bars bandwidth. 40-10000 p/s, gain of 5.2 Neper and
where pellets should be cut, in the search for points 20 milliwatts of output power.
of contact and optimal adjustment of the spacing of
the point contacts. These last two operations are
carried out moreover under the microscope and are
made easier in the type 601 by the mechanical
arrangements that are used (Fig. 16).

Legend Fig 16 Ceramic body ... ... ..Soldered bronze caps with
the ceramic

The two bronze rods a and c are connected to a

point contact P of tungsten wire. The rod b supports
the Ge pellet. Each rod slides in a bronze cap and -A medium range telephone line repeater (Fig.
its position can be fixed by a screw. The set of 19);
three rods can be adjusted while checking the -A long distance telephone repeater for a 4 wire
electrical characteristics on the surface of the pellet: loaded circuit.
a and c can slide laterally and b can be adjusted by
translation and rotation. The translation of b allows
such precise control of the spacing of the point
contacts.

This latter unit will be inaugurated in Paris on a

Paris-Nancy circuit and its schematic is given in
figure 20.

Its maximum gain is equal to 3.5 Neper and

A pilot production run has already been available output power is 15 milliwatts. Total
completed enabling the study of methods of energy consumption is about 0.9 watt per direction
manufacturing and control. From November the of amplification. A pentode repeater of guaranteed
Westinghouse Company will manufacture 10,000 hours life consumes 4 watts per direction.
sufficient quantities for the state agencies that
sponsored the research at the company.
Figure 17 shows a photograph of Transistron
type 601.

5° Transistron Applications.

Of test equipment currently operating in the
laboratories of S.R.C.T. there is:
-A broadcast receiver (Fig. 18);
-A transmitter for 300 metres longwave.
Due to the simplicity of the possible source of
polarization of its electrodes and low consumption,
Transistrons are conveniently powered remotely
via the telephone line they are installed on. To the
extent that the life-time projections of this
equipment are borne out they will reduce the cost
 L'ONDE ÉLECTRIQUE
of telephone lines by using more amplifiers on
thinner lines reducing raw materials usage.
Figure 21 shows the diagram of the amplifier
remotely powered with two push-pull Transistrons
shown in Figure 19.
The S.R.C.T. Laboratories current applications
research is particularly directed to applying the
Transistron for telephone circuit electronics
targeting the simplification of equipment, reducing
the hardware footprint, increasing the security of
service and reducing the annual costs of the
circuits.
The team conducting applications research on
semiconductors include:
For the Administration of P.T.T.:
MM. JOB, Ingénieur des P. T. T.
MOLL, Ingénieur Contractuel
CHALHOUB, Ingénieur Contractuel
PERINET, Inspecteur des I. E. M.
GANET, Inspecteur des I. E. M.
LE FLOCH, Contrôleur des I E. M.
VALIÉNET, Contrôleur des I. E. M.
COULON, Contrôleur des I. E. M.
POTET, Contrôleur des I. E. M.
For the Westinghouse Company:
MM. WELKER, Docteur Physicien
MATARE, Docteur Physicien.
PETIT-LEDU, Physicien
BETHGE, Ingénieur.
POILLEAUX, Technologiste.
CALON, Technologiste.
PHILIPPOTEAUX, Technologiste.
The authors particularly thank M ENGEL,
Technical Director of the Westinghouse Company,
for the valuable assistance he gave in all
circumstances during the work on the Transistron.
Refer Translator’s Notes overleaf
REFERENCES
Atomistique et Chimie Générale, by R RENAULT. Dunod,
Paris.
Modern Theory of Solids by SEITZ - McGraw Hill, N. Y.
and London.
Electronic Processes in Ionic Crystals by N. F. MOTT and
RW. GURNEY - Oxford University, London.
Crystal Rectifiers, by TORREY and WHITMER - M.I.T.,
McGraw Hill N.Y. and London.
Microwave Mixers by POUND - M.I.T. Mc. Graw Hill N.Y.
and London.
Die Elektronenleitung des Kupferoxyduls by W.
SCHOTTKY and F. WAIBEL, Physikalische Zeitschrift N °
23, 1933, (Translation CNET N° 38).
Uber die Elektriche leit fahrigkeit des kupfer oxyduls im
gleichgewicht mit weinen nachbarphalen by F. WAIBEL.
Zeitchrift für technische Physik N° 11, 1935 (Translation
CNET No 428).
Détecteurs à Pyrite pour ondes décimétriques by H.
WELKER - (Translation N° 5441 du Ministère de
l'armement S.E.F.T.).
Schottky's Theories of dry solid Rectifiers by JOFFE
Electrical Communications Vol. 22, N° 3, 1945.
Electrical resistance of the contact between a semiconductor
and a metal, by JOFFE,- J. Phys. U. R. S. S., Vol. 10, N° 1,
1946 (Translation CNET, N° 622).
Sur l’intérêt et les possibilités d'application des semi-
conducteurs électroniques dans la technique des hautes
fréquences by M. TEZNER - Note Technique CNET, N°
1047.
Note relative aux redresseurs à contact ponctuel sur semi-
conducteur - Note S.R.C.T. - Département Transmission 10-
10-48.
Le courant électrique, le photon et l'électron par M. G.
POCHOLLE, Ingénieur en Chef des P,T.T. - Bulletin de
Documentation du Secrétariat aux Forces armées
«Guerre ».
The Transistor a crystal triode, by D. G. F. and F. H. R.,
Electronics, September 1948.
The Transistor A semi-Conductor Triode, by J BARDEEN
and W. H. BRATTAIN, the Physical Review, July 15, 1948.
Nature of the Forward Current in Germanium point
Contacts, by W. H. BRATTAIN and J. BARDEEN, The
Physical Review, July 15, 1948.
Modulation of Conductance of Thin Films of Semi-
Conductors by Surface Charges, by W. SHOCKLEY and
G.L. PEARSON, The Physical Review, July 15, 1948.
Les détecteurs à Germanium by R. SUEUR, Information
Technique - janvier-février 1949.
Germanium, important new Semiconductor, by Dr. W.
Crawford DUNLAP VR, General Electric Review,
February 1949.
Temperature Dependence of the Work Fuction. of Semicon-
ductors by A. H. SMITH, Physical Review, 15 March 1949.
The Effect of Surface States on the Temperature Variation,
of the Work Function of Semiconductors by Jordan, J.
MARKHAM and PH MILLER Jr.
The Type-A Transistor by RM. RYDER, Bell Laboratories
Record. March 1949.
Some Novel Circuits for the Three 'Terminals
Semiconductor amplifier by W. M. WEBSTER, E.
EBERHARD and L.E. BARTON, R.C.A. Review, March
1949.
Physical Principles Involved in Transistor Action by J.
BARDEEN and W. H. BRATTAIN, Physical Review 15
April 1949.
 L'ONDE ÉLECTRIQUE

Translators’ Notes (3) But these contemporary sources show

Transistrons without a cap:
The available copies of the original publication
are only available in relatively low resolution and
in particular the originals of Figures 18 and 19 are
poorly reproduced. In this facsimile Figure 18 has
been copied from an identical picture in Aberdam
1949 (courtesy Christian Adam) and Figure 19 has
been copied from Aisberg 1949.

Early Versions of the Transistron 601

There are three versions of the Transistron 601:

1. Three adjustable stems

2. One adjustable stem and a window cap
Pictures above from Aberdam 1949 courtesy
3. One adjustable stem and no window cap
Christian Adam.

(1) In his text Sueur describes what we presume

to be an early version in which the stems that hold
the emitter and collector point-contacts can slide
and rotate in their end-caps for the purposes of
adjustment and then fixed in place with a grub
screw. The crystal holder is equipped with the same
facility.

The pictures of the Transistron clearly show this

arrangement for the crystal holder but not for the
emitter and collector indicating that early in 1949
the method of production was simplified.
Contemporary pictures also show two versions of
this Transistron. Above: Publicity picture of the Transistron on its
official release. [Aisberg 1949]

(2) In figure 17 a Transistron is shown with a cap Forward and Reverse Bias
placed over the window used to adjust the point
contacts on the crystal. This version of the The treatment by Sueur is somewhat confusing in
Transistron is used in the broadcast receiver and the relation to point contacts on N or P germanium.
telephone circuit repeater (figs 18 and 19) and other The following provides a consistent explanation
equipment such as the long wave transmitter shown from Pfann 1950.
in Aberdam 1949:
Conductivity Polarity of Point
Type of the Forward Reverse
Semiconductor Direction Direction
N-Type + -
P-Type - +

Thus the bias arrangements for each case is given

as follows where the emitter is forward biased and
the collector is reverse biased:
 L'ONDE ÉLECTRIQUE

References

Aberdam H 1949 Transistor et

Transistron Ingénieurs et Techniciens 12 213-18
Aisberg E 1949 Transistron = Transistor+ ? Toute
la Radio 137 218-20
Pfann W Scaff J 1950 The P-Germanium
Transistor Proc IRE 38 1151-54