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16. Geometric effects are called Steric hindrance &which results in higher
activation energy.
17. For dry oxidation, oxidation rate v, based on data at 8000c & thickness upto
150A0 is ordered in the following manner
A. V111>V110>V100
B. V110>V111>V100
C. V111>V110>V100
D. V110<V110<V100
18. The dielectric is an active component of the storage capacitor in _______
A. RAM
B. DRAM
C. ROM
D. EEPROM
19. Oxidation rate is ________ at lower temperature & reduced pressure.
A. Normal
B. Higher
C. Lower
D. Constant
20. Oxides of 40-130A0 (11500, 5 to 10sec) have breakdown field of ____ for 100A0
oxides.
A. 13.6 μV/cm
B. 13.8 mV/cm
C. 13.8 μV/cm
D. 1.36 mV/cm
21. The enhancement of oxidation rate found to_____ with thickness.
A. Increase linearly
B. Decay Exponentially
C. Decrease non-linearly
D. Won’t change
22. Breakdown field reduced pressure technique
A. 12.6 μV/cm
B. 10-13 μV/cm
C. 13.8 μV/cm
D. 1.36 mV/cm
23. Oxides density increase as
A. Refractive index (RI) increases
B. Refractive index decreases
C. Oxidation temperature decreases
D. Oxidation temperature increases
24. Common cleaning procedure uses H20-H202-NH4 mixture to remove organic
contamination.
25. Pyrogenic technique contains H2 & O2 to form water vapour
26. In higher pressure oxidation, oxidation induced defects are reduced.
27. Plasma oxidation is a low vacuum process .carried out in pure oxygen
discharge.
28. In plasma oxidation growth rate increases with increase in temperature.
29. Oxidation of phosphorous –doped silicon in wet O2, B is relatively independent
of concentration
30. Size of the ultra thin oxides will be
A. <20 A0
B. <50 A0
C. <150 A0
D. <120 A0
31. Ultra thin oxides are produced by ______acid, boiling water and air at room
Temperature.
A. Sulphuric
B. Hot hydrochloric
C. Hot nitric
D. None of the above
32. Oxidation rate will be lower at
A. Low temperature, low pressure
B. High temperature and low pressure
C. High temperature and high pressure
D. None of the above.
33. The size of the oxide thickness grown using reduced pressure technique
A) <20 A0 B)200 A0 C)150-180 A0 D)30-140 A0
34. Amount of pressure used in the reduced pressure technique.
A) 10torr B) 0.25-2 torr C) 2.5-4 torr D) 6 torr.
35. Kinetics of oxide growth in reduced pressure oxidation is _________
A) Linear
B) Parabolic.
36. The size of the oxide thickness grown using high pressure and low temperature
Steam oxidation technique is
A) 100 A0 B) 200 A0 C)250 A0 D) 300 A0
37. Wet oxidation occurs at a substantially greater rate than for dry oxidation
A) True b) False.
38. Higher concentration of sodium ion in the SiO2 enhances the diffusion and
concentration of the O2 molecule in the oxide.
A) True B) False.
39. Particulate matter in the pre-oxidation cleaning process removed by
A. Ultrasonic scrubbing
B. Mechanical
C. Both A and B
D. None of the above.
40. Anodic plasma oxidation can grow oxide thickness of
A) 200 A0 B) 800 A0 C) 1000 A0 D) 600 A0
41. Plasma is produced for plasma oxidation by
A. High frequency discharge
B. DC electron source
C. Both A and B
D. None of the above.
42. Growth rate of oxide in plasma oxidation increases with.
A. Increase in substrate temperature
B. increase in plasma density.
C. Substrate dopant concentration
D. All the above.
43. In dynamic RAM Quantity of charge stored depends on (in concern with silicon
Wafer).
A. Thickness of the wafer
B. Dielectric material.
C. A& B
D. None of these
44. The oxidation technique chosen depends on
A. Thickness
B. Oxide properties
C. A and B
D. None of the above.
45. What is the order of thickness of the oxide that can be grown by plasma
oxidation.
A)1μm C)2μm C)1.5μm D) 10 A0
46. What is the growth rate we can obtain by plasma oxidation.
A)2.5μm/L B) 1μm/L C)1.5μm/L D) 2 μm/L
47. In plasma oxidation the plasma is obtained by
A. High frequency discharge.
B. Dc electron discharge.
C. both a and b.
D. none of the above.
48.The growth rate of the oxide typically increases with
A. Increasing substrate temperature.
B. Increasing plasma density.
C. Increasing sustrate dopant concentration.
D. All the above.
49. Refractive index of the dry oxide decreases with
A. Increasing temperature.
B. decreasing temperature
C. Independent of temperature.
D. None of the above.
50. RI of the dry oxide gets saturated above.
A) 11900C B) 11000C C) 12500C D) 12200C
51. The etch rate of the thermal oxides at room temperature in buffered HF is
generally quoted at about
A. 2000A0/min
B. 2500A0/min
C. 1000A0/min
D. 500A0/min
52. The etch rate of thermal oxides at room temperature varies with.
A. Temperature
B. Etch solution
C. Temperature & Etch solution
D. None of the above.
53. Oxides used for masking common impurities in conventional device processing
are of what thickness.
A) 0.5 to 0.7 μm B) 1.2 to 1.4 μm C)0.8 to 1.0 μm D)1.6 to 1.8 μm.
54. The values of the diffusion conctants for various dopants in SiO2 depends on
A) Concentration B) properties C) structure of SiO2 D) all the above.
55. Among the impurities given below which is having the highest diffusion
constants.
A) Boron B) gallium C) phosphorous D) arsenic.
56. What is the diffusion constant value of gallium at 11000C
A. 5.3×10-11
B. 9.9×10-17
C. C) 3.4×10-17 to 2.0×10-17
D. D) 1.2×10-17 to 3.5×10-17
57. The oxide charges are described by its equation
A) Q=It B) N=Q/q C) N=Qt D) none
1. For low charge density level, between oxide and the Si --------- oxidation is
preferable,
A. Plasma B. Thermal C. High pressure D. Vapor
2. For multilevel metallization ________oxidation is used
A. Plasma B. Thermal C. High pressure D. Vapor phase
3. Chemical reaction in Thermal oxidation for vapor is
A. Si + O2 SiO2
B. Si + H20 SiO2 + H2
C. Si + H2O SiO2 + H2O
D. None of above
4. The bond between Si and SiO2 is,
A. Atomic bond
B. Covalent bond
C. Nuclear bond
D. None
5. If 40 A° is thickness of oxidation layer, amount of Si consumed by SiO2 is,
A. 20 A° B. 1.77 A° C. 12.3 A° D. 17.11 A°