FDS4435BZ P-Channel PowerTrench® MOSFET

June 2007
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20mΩ
Features General Description
„ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild
®
„ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench process that has
„ Extended VGSS range (-25V) for battery applications been especially tailored to minimize the on-state resistance.
„ HBM ESD protection level of ±3.8KV typical (note 3) This device is well suited for Power Management and load
„ High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and
„ High power and current handling capability Portable Battery Packs.
„ Termination is Lead-free and RoHS compliant

D
D
D D 5 4 G
D
D 6 3 S

D 7 2 S
G
S
S D 8 1 S
Pin 1 S

SO-8

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
Drain Current -Continuous TA = 25°C (Note 1a) -8.8
ID A
-Pulsed -50
Power Dissipation TA = 25°C (Note 1a) 2.5
PD W
Power Dissipation TA = 25°C (Note 1b) 1.0
EAS Single Pulse Avalanche Energy (Note 4) 24 mJ
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 25
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDS4435BZ FDS4435BZ SO-8 13’’ 12mm 2500units

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS4435BZ Rev.C
 FDS4435BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
∆BVDSS Breakdown Voltage Temperature
ID = -250µA, referenced to 25°C -21 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 µA
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -2.1 -3 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250µA, referenced to 25°C 6 mV/°C
∆TJ Temperature Coefficient
VGS = -10V, ID = -8.8A 16 20
rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 mΩ
VGS = -10V, ID = -8.8A, TJ = 125°C 22 28
gFS Forward Transconductance VDS = -5V, ID = -8.8A 24 S

Dynamic Characteristics
Ciss Input Capacitance 1385 1845 pF
VDS = -15V, VGS = 0V,
Coss Output Capacitance 275 365 pF
f = 1MHz
Crss Reverse Transfer Capacitance 230 345 pF
Rg Gate Resistance f = 1MHz 4.5 Ω

Switching Characteristics
td(on) Turn-On Delay Time 10 20 ns
VDD = -15V, ID = -8.8A,
tr Rise Time 6 12 ns
VGS = -10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 30 48 ns
tf Fall Time 12 22 ns
Qg Total Gate Charge VGS = 0V to -10V 28 40 nC
VDD = -15V,
Qg Total Gate Charge VGS = 0V to -5V 16 23 nC
ID = -8.8A
Qgs Gate to Source Charge 5.2 nC
Qgd Gate to Drain “Miller” Charge 7.4 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.8A (Note 2) -0.9 -1.2 V
trr Reverse Recovery Time 29 44 ns
IF = -8.8A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 23 35 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 50°C/W when mounted on b. 125°C/W when mounted on

a 1 in2 pad of 2 oz copper. a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDS4435BZ Rev.C
 FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

50 4.0
VGS = -10V PULSE DURATION = 80µs

DRAIN TO SOURCE ON-RESISTANCE

VGS = -3.5V
VGS = -5V 3.5 DUTY CYCLE = 0.5%MAX
40
-ID, DRAIN CURRENT (A)

VGS = -4.5V
3.0
VGS = -4.5V

NORMALIZED
30 2.5
VGS = -4V VGS = -5V
VGS = -4V 2.0
20
VGS = -3.5V 1.5
10 VGS = -10V
PULSE DURATION = 80µs 1.0
DUTY CYCLE = 0.5%MAX
0 0.5
0 1 2 3 4 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 60
ID = -8.8A PULSE DURATION = 80µs
DRAIN TO SOURCE ON-RESISTANCE

ID = -8.8A
VGS = -10V DUTY CYCLE = 0.5%MAX

SOURCE ON-RESISTANCE (mΩ)

1.4 50
rDS(on), DRAIN TO
NORMALIZED

1.2 40

TJ = 125oC
1.0 30

0.8 20
TJ = 25oC
0.6 10
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( C) o
-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

50 100
PULSE DURATION = 80µs
-IS, REVERSE DRAIN CURRENT (A)

VGS = 0V
DUTY CYCLE = 0.5%MAX
40 10
-ID, DRAIN CURRENT (A)

VDS = -5V 1
30
0.1 TJ = 150oC TJ = 25oC
20
TJ = 150oC 0.01
TJ = -55oC
10
TJ = 25oC 0.001
TJ =-55oC

0 0.0001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2007 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDS4435BZ Rev.C
 FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 4000
-VGS, GATE TO SOURCE VOLTAGE(V)

ID = -8.8A

8 Ciss

VDD = -10V

CAPACITANCE (pF)
6 1000
VDD = -15V VDD = -20V Coss
4

2 Crss
f = 1MHz
VGS = 0V
0 100
0 5 10 15 20 25 30 0.1 1 10 30
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

-4
20 10
VDS = 0V

-Ig, GATE LEAKAGE CURRENT(A)

-IAS, AVALANCHE CURRENT(A)

-5
10 10
TJ = 125oC
-6
10
TJ = 25oC

TJ = 125oC 10
-7

TJ = 25oC
-8
10

-9
1 10
0.01 0.1 1 10 30 0 5 10 15 20 25 30
tAV, TIME IN AVALANCHE(ms) -VGS, GATE TO SOURCE VOLTAGE(V)

Figure 9. Unclamped Inductive Figure 10. Gate Leakage Current vs Gate to

Switching Capability Source Voltage

10 100
-ID, DRAIN CURRENT (A)

8
-ID, DRAIN CURRENT (A)

100us
10
VGS = -10V
1ms
6
1 10ms
VGS = -4.5V THIS AREA IS 100ms
4
LIMITED BY rDS(on)
SINGLE PULSE 1s
0.1 TJ = MAX RATED
2 o
10s
RθJA = 125 C/W DC
o
RθJA = 50 C/W TA = 25oC
0 0.01
25 50 75 100 125 150 0.1 1 10 80
o
TA, AMBIENT TEMPERATURE ( C) -VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Maximum Continuous Drain Figure 12. Forward Bias Safe
Current vs Ambient Temperature Operating Area

©2007 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDS4435BZ Rev.C
 FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
100
VGS = -10V FOR TEMPERATURES
P(PK), PEAK TRANSIENT POWER (W)

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:
150 – T
I = I25
A
------------------------
125
10
TA = 25oC

SINGLE PULSE
RθJA = 125oC/W
1
0.6
-3 -2 -1 0 1 2 3
10 10 10 10 10 10 10
t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation

2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1
0.05
0.02
0.01 PDM
0.1

t1
t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
RθJA = 125oC/W
PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
-3 -2 -1 0 1 2 3
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 14. Transient Thermal Response Curve

©2007 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDS4435BZ Rev.C
 TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not
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LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com