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METAL-
SEMICONDUCTOR
JUNCTIONS
EFm
Ev
n-semiconductor
(b) Metal
Vacuum
Formation of a Schottky En
erg
junction eχs y
++
eφm eφb + + eφm – eφs = eVbi
– +
Ec
–
EFm EFs
Ev
(c) W
p-type
Evac
Metal and semiconductor band
≈ ≈ eφ eχs
profiles s
eφm Ecs
EFm
EFs
Evs
Metal Semiconductor
(a)
Ec
Formation of a Schottky junction
for p-type materials p-semiconductor
+
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Metal +
+ EFs
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eφb Ev
eφs – eφm = eVbi
(b)
Semiconductor surfaces
have a large number of
defect states (from broken
bands, impurities, etc.)
Defect levels in the bandgap at the
metal-semiconductor interface
eφb = Eg – eφο
Ec
EFm eφο EFs
Ev
Tungsten, W 0.67
Silver, Ag 0.88
Platinum, Pt 0.86
+ V –
– V +
Electron flow
e(Vbi – V)
Ec
eφb = e(φm – χ) e(φm – χ)
EFs
eV
EFm EFm e(Vbi + V)
Ev
Ec
Forward bias EFs
(a)
Ev
Reverse bias
(b)
I
Current dominated by electron
flow from the semiconductor
to the metal
–eφb
= A R* T2 exp (k T )
B
m*
Richardson constant: R* = 120 mo Acm–2K–2
Cgeom
Cd Rs Ls
Rd
Depletion capacitance:
eN ε 1/2
Cd = A 2(V d–V)
bi
Diode resistance:
Rd = dV = keIT
dI B
Forward bias needed to make the The cut-in voltage is quite small
device conducting (the cut-in
voltage) is large
OHMIC CONTACT
Current is linear in an
ohmic contact
resistance is very small
CURRENT
Schottky
barrier
VOLTAGE
OHMIC CONTACT
n+
REGION
n-type
SEMICONDUCTOR
Ev
40
TRANSISTOR GATE LENGTHS:
1999: 0.2 µm
35
2003: 0.1 µm
Interconnect delay for
30 Al-based interconnects
TIME DELAY (ps)
25
20
Transistor delay
15