Bulletin I27128 Rev.

C 07/03

19MT050XF
"FULL-BRIDGE" FREDFET MTP
Features
Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current Aluminum Nitride DBC Very Low Stray Inductance Design for High Speed Operation

HEXFET Power MOSFET

31 A
VDSS = 500V

Benefits
Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Low Trr and Soft Diode Reverse Recovery Optimized for Welding, UPS and SMPS Applications Outstanding ZVS and High Frequency Operation Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance UL Approved E78996

MMTP

Absolute Maximum Ratings Parameters

ID IDM PD VGS VISOL dv/dt Continuos Drain Current @ VGS = 10V Pulsed Drain Current Maximum Power Dissipation Gate-to-Source Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Peak Diode Recovery dv/dt (3) (1) @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C

Max
31 19 124 1140 456 30 2500 15

Units
A

W V V/ ns

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameters
V(BR)DSS V(BR)DSS/ T J R DS(ON) V GS(th) I DSS I GSS Drain-to-Source Breakdown Voltage Temperature Coeff. of Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current (6) Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Min Typ Max Units Test Conditions

500 0.48 0.19 0.21 3.0 0.22 0.25 6.0 50 2 150 - 150 V V GS = 0V, I D = 250A V/C I D = 4mA, reference to T J = 25C V A mA nA V GS = 10V, I D = 19A V GS = 10V, I D = 31A V DS = V GS , I D = 250A V DS = V DS = V GS = V GS = 500V, V GS = 0V 400V, V GS = 0V, T J = 125C 30V - 30V (4)

Dynamic Characteristics @ TJ = 25C (unless otherwise specified)

Parameters
gfs Qg Qgs Qgd td(on) td(off) tr tf Ciss Coss Crss Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-on Delay Time Turn-off Delay Time Rise Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min Typ Max Units Test Conditions

26 105 36 46 49 80 165 76 4808 1165 40 160 55 70 74 120 250 115 7210 1750 60 S nC V DS = 50V, ID = 19A I D = 31A VDS = 400V VGS = 10V I D = 31A VDS = 250V VGS = 10V RG = 4.3 VGS = 0V VDS = 25V f = 1.0 MHz

(4)

ns

pF

Diode Characteristics @ TJ = 25C (unless otherwise specified)

Parameters
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (1) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1.01 252 1619

Min Typ Max Units Test Conditions

31 124 1.1 378 2428 V ns nC A MOSFET symbol showing the integral reverse
D

G S

p-n junction diode TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IF = 31A di/dt = 100A/s

(4) (4)

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

Avalanche Characteristics
Parameters
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy (2) (1) (1)

Min

Typ

Max
493 31 114

Units
mJ A mJ

Thermal- Mechanical Specifications

Parameters
TJ TSTG R thJC R thCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case (per MOSFET) Case-to-Sink
(Heatsink Compound Thermal Conductivity = 1 W/mK)

Min
- 40 - 40

Typ

Max
150 125 0.44

Units
C C/ W

0.06 (external shortest distance in air (shortest distance along external 5.5 8 66
(3) ISD 31A, di/dt 340 A/s, VDD V(BR)DSS, TJ 150C (4) Pulse width 400s; duty cycle 2% (5) Standard version only i.e. without optional thermistor (6) ICES includes also opposite leg overall leakage

Clearance Creepage Weight

(5)

mm

between two terminals)

(5)

surface of the insulating material between 2 terminals)

Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) Starting TJ = 25C, L = 1.0mH, RG = 25 IAS = 31A

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

1000

ID, Drain-to-Source Current (A)

100

ID, Drain-to-Source Current (A)

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP

100

10

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP

10

5.0V

5.0V
0.1

20s PULSE WIDTH Tj = 25C

0.01 0.1 1 10 100
0.1 0.1 1

20s PULSE WIDTH Tj = 150C

10 100

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.5

R DS(on) , Drain-to-Source On Resistance

ID = 31A VGS = 10V

2.0

ID, Drain-to-Source Current ( A)

100

10

T J = 150C

(Normalized)

1.5

T J = 25C VDS = 50V 20s PULSE WIDTH

4.0 5.0 6.0 7.0 8.0 9.0

1.0

0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V)

T J , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

100000

10000

Coss = Cds + Cgd

VGS , Gate-to-Source Voltage (V)

VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd

16

ID= 31A VDS= 400V VDS= 250V VDS= 100V

12

C, Capacitance (pF)

Ciss

1000

Coss

100

4
FOR TEST CIRCUIT SEE FIGURE 13

Crss
10 1 10 100 1000

0 0 40 80 120 160
VDS, Drain-to-Source Voltage (V)

Q G Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

1000.0

1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100

100.0 T J = 150C 10.0

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

10

100sec

1msec 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10msec

1.0 T J = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VGS = 0V

0.1
1.2 1.4 VSD, Source-toDrain Voltage (V)

1000

10000

VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

32
VDS

RD

28
VGS

24

ID, Drain Current (A)

RG

D.U.T.
+

- VDD

20
10V

16 12

Pulse Width 1 s Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

8

VDS
4 0 25 50 75 100 125 150

90%

TC, Case Temperature Fig 9. Maximum Drain Current Vs. Case Temperature

10% VGS
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC (C/W) Thermal Response Z thJC )

D = 0.50
0.1

0.20 0.10 0.05

0.01

0.02 0.01

R1 R1 J 1 2

R2 R2

R3 R3 3 C 3

Ri (C/W) 0.1272 0.2697 0.0429

i (sec) 0.00109 0.03739 3.749

0.001

Ci= i/Ri Ci= i/Ri

SINGLE PULSE ( THERMAL RESPONSE )

0.0001 1E-006 1E-005 0.0001 0.001 0.01

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc

0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

1000

EAS, Single Pulse Avalanche Energy (mJ)

800

ID 14A 19A BOTTOM 31A

TOP
L

15V

600

VDS

DRIVER

400

RG
20V

D.U.T
IAS

+ V - DD

200

tp

0.01

0 25 50 75 100 125 150

Fig 12b. Unclamped Inductive Test Circuit and vs Junction Temperature

Starting T J , Junction Temperature (C)
tp V(BR)DSS

Fig 12a. Maximum Avalanche Energy Vs. Drain Current

I AS

Fig 12c. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K 12V .2F .3F

QG
+ V - DS

VGS

D.U.T. VGS
3mA

QGS VG

QGD

IG

ID

Current Sampling Resistors

Charge

Fig 13a. Gate Charge Test Circuit

Fig 13b. Basic Gate Charge Waveform

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

Peak Diode Recovery dv/dt Test Circuit

+

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T

RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V *

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET Power MOSFETs

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

Outline Table

Dimensions in millimeters

www.irf.com

19MT050XF
Bulletin I27128 Rev.C 07/03

Ordering Information Table

Device Code

19
1

MT 050
2 3

X
4

F
5

1 2 3 4 5

Current rating Essential Part Number Voltage code Speed/ Type

(19 = 19A) (050 = 500V) (X = HexFet)

Circuit Configuration (F = Full Bridge)

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/02

10

www.irf.com

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.