PMV65XP

P-channel TrenchMOS extremely low level FET

Rev. 01 28 September 2004 Product data sheet

1. Product prole
1.1 General description
P-channel enhancement mode eld effect transistor in a plastic package using TrenchMOS technology.

1.2 Features
s Low threshold voltage s Low on-state resistance.

1.3 Applications
s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment.

1.4 Quick reference data

s VDS 20 V s RDSon 76 m s ID 3.9 A s Qgd = 0.65 nC (typ).

2. Pinning information
Table 1: Pin 1 2 3 Discrete pinning Description gate (g) source (s) drain (d)
g

Simplied outline
3

Symbol
d

2
SOT23

s
003aaa671

SOT23

Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

3. Ordering information
Table 2: Ordering information Package Name PMV65XP SOT23 Description Plastic surface mounted package; 3 leads Version SOT23 Type number

4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 C peak source (diode forward) current Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 C; VGS = 4.5 V; Figure 2 Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min 55 55 Max 20 20 12 3.9 2.5 15.9 1.92 +150 +150 1.6 6.4 Unit V V V A A A W C C A A

Source-drain diode

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

120 Pder (%) 80

03aa17

120 Ider (%) 80

03aa25

40

40

0 0 50 100 150 Tsp (C) 200

0 0 50 100 150 Tsp (C) 200

P tot P der = ---------------------- 100% P

tot ( 25 C )

ID I der = ------------------- 100% I

D ( 25 C )

Fig 1. Normalized total power dissipation as a function of solder point temperature.

102 -ID (A) 10

Fig 2. Normalized continuous drain current as a function of solder point temperature.

03ar44

Limit RDSon = -VDS / -ID tp = 10 s 100 s 1 ms 1 DC 100 ms 10 ms

10-1

10-2 10-1 1 10 -VDS (V) 102

Tsp = 25 C; IDM is single pulse; VGS = 4.5 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

5. Thermal characteristics
Table 4: Rth(j-sp) Thermal characteristics Conditions Figure 4 Min Typ Max 65 Unit K/W thermal resistance from junction to solder point Symbol Parameter

5.1 Transient thermal impedance

102 Zth(j-sp) (K/W) 10
03ar45

= 0.5 0.2 0.1 0.05 0.02

tp T

single pulse

tp

t T

10-1 10-5

10-4

10-3

10-2

10-1

tp (s)

10

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specied. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = 55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = 55 C IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current VGS = 12 V; VDS = 0 V Tj = 25 C Tj = 150 C VGS = 2.5 V; ID = 2.3 A; Figure 6 and 8 Dynamic characteristics Qg(tot) Qgs Qgd Vplat Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain (Miller) charge plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 1.25 A; VGS = 0 V; Figure 12 VDS = 6 V; RL = 6 ; VGS = 4.5 V; RG = 6 VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 13 ID = 2.8 A; VDS = 6 V; VGS = 4.5 V; Figure 11 7.6 1.6 0.65 1.5 725 105 80 7 21 68 33 0.77 1.2 nC nC nC V pF pF pF ns ns ns ns V drain-source on-state resistance VGS = 4.5 V; ID = 2.8 A; Figure 6 and 8 65 104 90 76 122 112 m m m 10 1 100 100 A A nA 0.55 0.35 0.75 0.95 1.1 V V V 20 18 V V Conditions Min Typ Max Unit

Source-drain diode

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

20 -ID (A) 15

03ar46

-4.5 V

-3.5 V -3 V

200 RDSon (m) 160 VGS = -2.5 V

03ar47

-2.5 V 120 10 -2 V 5 -1.8 V -1.6 V VGS = -1.4 V 0 0 0.5 1 1.5 -VDS (V) 2 0 0 5 10 15 -ID (A) 20 40 80 -3.5 V -4.5 V -3 V

Tj = 25 C

Tj = 25 C

Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
20 -ID (A) 15
03ar48

Fig 6. Drain-source on-state resistance as a function of drain current; typical values.

2 a 1.5
03aq10

10

5 Tj = 150 C 25 C

0.5

0 0 1 2 3 -VGS (V) 4

0 -60

60

120

Tj (C)

180

Tj = 25 C and 150 C; VDS > ID x RDSon

R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.

Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values.

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

1.2 -VGS(th) (V) 0.8

03ar95

10-3 -ID (A) 10-4

03ar96

max

typ

min 10-5

min

typ

max

0.4

0 -60

10-6 0 60 120 Tj (C) 180 0 0.2 0.4 0.6 0.8 1 -VGS (V)

ID = 1 mA; VDS = VGS

Tj = 25 C; VDS = 5 V

Fig 9. Gate-source threshold voltage as a function of junction temperature.

5 -VGS (V) 4

Fig 10. Sub-threshold drain current as a function of gate-source voltage.

03ar51

0 0 2 4 6 8 10 QG (nC)

ID = 2.8 A; VDS = 6 V

Fig 11. Gate-source voltage as a function of gate charge; typical values.

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

7 of 12

Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

10 -IS (A) 8

03ar50

103

03ar49

Ciss C (pF)

6 102 4 150 C 2 Tj = 25 C Coss Crss

0 0 0.3 0.6 0.9 -VSD (V) 1.2

10 10-1

10

-VDS (V)

102

Tj = 25 C and 150 C; VGS = 0 V

VGS = 0 V; f = 1 MHz

Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

7. Package outline
Plastic surface mounted package; 3 leads SOT23

HE

v M A

Q A A1

1
e1 e bp

2
w M B detail X Lp

1 scale

2 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1

OUTLINE VERSION SOT23

REFERENCES IEC JEDEC TO-236AB EIAJ

EUROPEAN PROJECTION

ISSUE DATE 97-02-28 99-09-13

Fig 14. SOT23 package outline.

9397 750 13993 Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

9 of 12

Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

8. Revision history
Table 6: Revision history Release date Data sheet Change status notice Doc. number 9397 750 13993 Supersedes Document ID PMV65XP_1

20040928 Product data sheet

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

10 of 12

Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

9. Data sheet status

Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualication Denition This data sheet contains data from the objective specication for product development. Philips Semiconductors reserves the right to change the specication in any manner without notice. This data sheet contains data from the preliminary specication. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specication without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specication. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN).

III

Product data

Production

[1] [2] [3]

Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Denitions
Short-form specication The data in a short-form specication is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values denition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specied use without further testing or modication.

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specied.

12. Trademarks
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

11. Disclaimers
Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 13993

Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 28 September 2004

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Philips Semiconductors

PMV65XP
P-channel TrenchMOS extremely low level FET

14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product prole . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Denitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11

Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 September 2004 Document number: 9397 750 13993

Published in The Netherlands