2SK2937

Silicon N Channel MOS FET High Speed Power Switching

ADE-208-560C (Z) 4th. Edition Jun 1998 Features

Low on-resistance R DS =0.026 typ. High speed switching 4V gate drive device can be driven from 5V source

Outline

TO220FM

1 2 S

1. Gate 2. Drain 3. Source

3

2SK2937
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1

Ratings 60 20 25 100 25 20 34 25 150 55 to +150

Unit V V A A A A mJ W C C

EAR

Pch Tch

Tstg

1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50

2SK2937
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 1.5 11 Typ 0.026 0.045 17 740 380 140 10 160 100 150 0.95 40 Max 10 10 2.5 0.034 0.070 Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 25A, VGS = 0 I F = 25A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Bodydrain diode forward voltage Bodydrain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr

2SK2937
Main Characteristics

Power vs. Temperature Derating 40

Pch (W)

Maximum Safe Operation Area 200 100

I D (A)

30

50 20
PW

10
10
1
D C O

Channel Dissipation

Drain Current

10 5 2 1 0.5

20

pe

10
tio

ra

m s(
c= n (T

t) ho 1s
25

10

Operation in this area is limited by R DS(on) Ta = 25 C

50

100

150

200

0.2 0.1

Case Temperature Tc (C)

0.3 1 3 10 Drain to Source Voltage V

30 (V) DS

100

50

Typical Output Characteristics 10 V 6V 5V

I D (A)

Typical Transfer Characteristics 20 V DS = 10 V Pulse Test

40
I D (A)

Pulse Test 4.5 V 4V

16

30

12

Drain Current

20 3.5 V 10 VGS = 3 V

Drain Current

8 25C Tc = 75C 4 25C

2 4 6 8 10 Drain to Source Voltage V DS (V)

1 2 3 Gate to Source Voltage V

4 (V) GS

2SK2937
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 Static Drain to Source on State Resistance vs. Drain Current

Drain to Source On State Resistance R DS(on) ( W)

1.0

0.5

Drain to Source Saturation Voltage V DS(on) (V)

Pulse Test
0.2

0.6 I D = 15 A 10 A 0.2 5A

0.1

0.4

0.05

VGS = 4 V 10 V

0.02 0.01

12 4 8 Gate to Source Voltage

16 V GS (V)

20

0.1 0.2

5 10 20 0.5 1 2 Drain Current I D (A)

50

Static Drain to Source on State Resistance R DS(on) ( W)

Pulse Test 0.08 10 A

Forward Transfer Admittance |y fs | (S)

Static Drain to Source on State Resistance vs. Temperature 0.10

50 20 10 5 2 1 0.5 0.1

Forward Transfer Admittance vs. Drain Current

Tc = 25 C

0.06 V GS = 4 V 0.04

25 C 75 C

2, 5 A

2, 5, 10 A 0.02 10 V 0 40 0 40 80 Case Temperature Tc 120 (C) 160

V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100

2SK2937
BodyDrain Diode Reverse Recovery Time 1000
Reverse Recovery Time trr (ns)

Typical Capacitance vs. Drain to Source Voltage 5000

Capacitance C (pF)

500

di / dt = 50 A / s V GS = 0, Ta = 25 C

2000 1000 500 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss Coss Ciss

200 100 50

20 10 0.1

0.3 1 3 10 30 100 Reverse Drain Current I DR (A)

Drain to Source Voltage V DS (V)

Dynamic Input Characteristics

V DS (V)

Switching Characteristics
V GS (V)

100

I D = 25 A

20

1000 300 t d(off) 100 30 10 3 1 0.1 tf tr

Drain to Source Voltage

60

V DS

12 V GS

Gate to Source Voltage

V DD = 50 V 25 V 10 V

Switching Time t (ns)

80

16

40

t d(on)

20

V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc)

4 0 40

V GS = 10 V, V DD = 3 0 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100

2SK2937
Reverse Drain Current vs. Source to Drain Voltage 20
Reverse Drain Current I DR (A) Repetitive Avalanche Energy EAR (mJ)

Maximum Avalanche Energy vs. Channel Temperature Derating 40 I AP = 20 A V DD = 25 V duty < 0.1 % Rg > 50 W

16 10 V 5V

Pulse Test

32

12

24

V GS = 0, 5 V

16

8 0 25

0.4

0.8

1.2

1.6 V SD (V)

2.0

Source to Drain Voltage

50 75 100 125 150 Channel Temperature Tch (C)

Avalanche Test Circuit EAR =

Avalanche Waveform 1 2 L I AP 2 VDSS VDSS V DD

V DS Monitor

L I AP Monitor

V (BR)DSS I AP VDD ID V DS

Rg Vin 15 V

D. U. T

50W 0 VDD

2SK2937
Normalized Transient Thermal Impedance vs. Pulse Width 3

Normalized Transient Thermal Impedance g s (t)

Tc = 25C 1 D=1 0.5 0.3

0.2

0.1

0.1
0.05
0.02 1 lse 0.0 pu ot h 1s

q ch c(t) = g s (t) q ch c q ch c = 5.0C/W, Tc = 25C

PDM PW T

D=

0.03

PW T

0.01 10

100

1m

10 m 100 m Pulse Width PW (S)

10

Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50W V DD = 30 V Vout 10% 10% Vout Monitor

Waveform

90%

10% 90% td(off) tf

90% td(on) tr

2SK2937
Package Dimentions
Unit: mm

10.0 0.3 7.0 0.3 f 3.2 0.2

2.8 0.2 2.5 0.2

2.0 0.3 5.0 0.3

2.7

0.7 0.1

2.54 0.5

2.54 0.5

0.5 0.1 Hitachi Code EIAJ JEDEC TO220FM SC67

14.0 1.0

1.2 0.2 1.4 0.2

12.0 0.3

4.45 0.3

17.0 0.3

0.6

Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.