IRFBC40

Data Sheet July 1999 File Number

2157.3

6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426.

Features
6.2A, 600V rDS(ON) = 1.200 Single Pulse Avalanche Energy Rated Simple Drive Requirements Ease of Paralleling Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards

Symbol
D

Ordering Information
PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40
S G

NOTE: When ordering, include the entire part number.

Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRFBC40
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFBC40 600 600 6.2 3.9 25 20 125 1.0 570 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 125oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S

TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 11) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V VGS = 10V, ID = 3.4A (Figures 9, 10) VDS 100V, IDS = 3.4A (Figure 13) VDD = 300V, ID 6.2A, RG = 9.1, VGS = 10V, RL = 47 Switching Speeds are Essentially ndependent of Operating Temperature

MIN 600 2.0 6.2 4.7 -

TYP 0.97 70 13 18 55 20 40 5.5 20 1300 160 45 4.5

MAX 4.0 25 250 100 1.2 20 27 83 30 60 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current

On-State Drain Current (Note 4) Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 12)

Internal Source Inductance

LS

7.5

nH

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

RJC RJA Typical Socket Mount

1.0 80

oC/W oC/W

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IRFBC40
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX 6.2 25

UNITS A A

Diode Source to Drain Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 6.2A, VGS = 0V (Figure 8) TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s

200 1.8

450 3.8

1.5 940 8.0

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25, peak IAS = 6.8A

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0

Unless Otherwise Specied

10

0.8 0.6 0.4 0.2 0

ID, DRAIN CURRENT (A) 0 50 100 150

0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

1 ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) 0.5 0.2 0.1 0.1 0.05 0.02 0.02 0.01 10-2 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10

10-3 10-5

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

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IRFBC40 Typical Performance Curves

102

Unless Otherwise Specied

(Continued)

10 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 8 VGS = 10V VGS = 6.0V 6 VGS = 5.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5.0V 4

ID, DRAIN CURRENT (A)

10

100s

1ms 1 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE

VGS = 4.5V VGS = 4.0V

DC 103 0 0

0.1 1

102 10 VDS, DRAIN TO SOURCE VOLTAGE (V)

60 120 180 240 VDS, DRAIN TO SOURCE VOLTAGE (V)

300

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

10

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

VGS =10V

10 VGS = 6.0V VGS = 5.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 100V ID, DRAIN CURRENT (A) 1

ID, DRAIN CURRENT (A)

6 VGS = 5.0V 4

TJ = 150oC 0.1

TJ = 25oC

VGS = 4.5V VGS = 4.0V

3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V)

15

10-2 0

2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)

10

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

102 ISD, SOURCE TO DRAIN CURRENT (A) DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

10 TJ = 150oC TJ = 25oC 1

3 VGS = 10V 2 VGS = 20V

0.1 0

0 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 1.5 0 6 12 18 ID, DRAIN CURRENT (A) 24 30

FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

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IRFBC40 Typical Performance Curves

3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 3.4A, VGS = 10V

Unless Otherwise Specied

(Continued)

1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

ID = 250A

2.4

1.15

1.8

1.05

1.2

0.95

0.6

0.85

0 -60

-40

-20

20

40

60

80

100 120 140 160

0.75 -60

-40

-20

20

40

60

80

100 120 140 160

TJ, JUNCTION TEMPERATURE (oC)

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

3000 gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD

10

2400 C, CAPACITANCE (pF)

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 100V

TJ = 25oC

1800

CISS

TJ = 150oC

1200 COSS 600 CRSS 0 0 2 10 20 50 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 102

4 6 ID, DRAIN CURRENT (A)

10

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT

20 GATE TO SOURCE VOLTAGE (V)

ID = 6.2A

16 VDS = 120V 12 VDS = 240V VDS = 360V 8

0 0 12 24 36 48 60 Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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IRFBC40 Test Circuits and Waveforms

VDS

L tP VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG

+

BVDSS VDS VDD

IAS VDD

IAS 0.01

0 tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr RL VDS

+

tOFF td(OFF) tf 90%

90%

RG DUT

VDD 0

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS

12V BATTERY

0.2F

50k 0.3F

DUT 0

IG(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORMS

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IRFBC40

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