Professional Documents
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Features
6.2A, 600V rDS(ON) = 1.200 Single Pulse Avalanche Energy Rated Simple Drive Requirements Ease of Paralleling Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards
Symbol
D
Ordering Information
PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40
S G
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRFBC40
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFBC40 600 600 6.2 3.9 25 20 125 1.0 570 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 11) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V VGS = 10V, ID = 3.4A (Figures 9, 10) VDS 100V, IDS = 3.4A (Figure 13) VDD = 300V, ID 6.2A, RG = 9.1, VGS = 10V, RL = 47 Switching Speeds are Essentially ndependent of Operating Temperature
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 4) Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature
LS
7.5
nH
1.0 80
oC/W oC/W
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IRFBC40
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 6.2 25
UNITS A A
Diode Source to Drain Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
TJ = 25oC, ISD = 6.2A, VGS = 0V (Figure 8) TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s
200 1.8
450 3.8
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25, peak IAS = 6.8A
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
1 ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) 0.5 0.2 0.1 0.1 0.05 0.02 0.02 0.01 10-2 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10
10-3 10-5
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(Continued)
10 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 8 VGS = 10V VGS = 6.0V 6 VGS = 5.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5.0V 4
10
100s
DC 103 0 0
0.1 1
300
10
VGS =10V
10 VGS = 6.0V VGS = 5.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 100V ID, DRAIN CURRENT (A) 1
6 VGS = 5.0V 4
TJ = 150oC 0.1
TJ = 25oC
15
10-2 0
10
102 ISD, SOURCE TO DRAIN CURRENT (A) DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
10 TJ = 150oC TJ = 25oC 1
0.1 0
0 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 1.5 0 6 12 18 ID, DRAIN CURRENT (A) 24 30
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(Continued)
ID = 250A
2.4
1.15
1.8
1.05
1.2
0.95
0.6
0.85
0 -60
-40
-20
20
40
60
80
0.75 -60
-40
-20
20
40
60
80
3000 gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
10
TJ = 25oC
1800
CISS
TJ = 150oC
1200 COSS 600 CRSS 0 0 2 10 20 50 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 102
10
ID = 6.2A
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IAS VDD
IAS 0.01
0 tAV
90%
RG DUT
VDD 0
10% 90%
10%
50%
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
DUT 0
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IRFBC40
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