THE OPEN UNIVERSITY OF SRI LANKA FACULTY OF ENGINEERING TECHNOLOGY DIPLOMA IN TECHNOLOGY LEVEL 3 ACADEMIC YEAR 2011/2012 ASSIGNMENT

T 1 MEX3272 APPLIED ELECTRONICS

1. Answer all questions. 2. Write your registration number clearly on your answer script. 3. Send your answer script under registered cover to the address given below or put it into the assignment box available at the Department of Mechanical Engineering (Block 17), Nawala. THE COURSE CO-ORDINATOR IN MEX3272 DEPARTMENT OF MECHANICAL ENGINEERING THE OPEN UNIVERSITY OF SRI LANKA P.O. BOX 21, NAWALA NUGEGODA. 4. Last date of submission See the activity diary. 5. No late submissions will be accepted.

Question 01 State the Thevenins theorem and Nortons theorem.

(a)

(b)

DC circuit is shown in Figure Q1 (b1).Use source transformation to find the values of A (Voltage source), B, C, D (Resistors), Ix (Current through the circuit) as shown in Figure Q1 (b2).

1 1V 1A

2 3 Ix A

C D Ix

Figure Q1 (b1)

Figure Q1 (b2)

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(c)

Find Rload for maximum power dissipation in the circuit shown in Figure Q1 (c). Rsource

Vsource

+ -

Rload

(d)

Figure Q1 (c) Following Figure Q1 (d) represents an active network consisting of three voltage sources, six linear resistors. Find the, i. Thevenin equivalent circuit, ii. Norton equivalent circuit, at the terminals A and B. iii. Calculate the power dissipated in a 3 resistor connected between the terminals AB.
2 2 3V 1 A

1V

2V 2

2 1 B

Figure Q1 (d) Figure Q1 (d) Question 02 Figure Q1 (d)

(a)

Compare the practical and ideal characteristic curves of the basic filters as low-pass, high-pass, band-pass and band-stop. Give an expression for the center frequency (fc), bandwidth (BW), quality factor (Q) and damping factor (DF) of a band-pass filter. Explain the Butterworth, Chebyshev and Bessel filter response characteristics. Consider the circuit given in Figure Q2 (d). Determine, a. b. c. The center frequency (fc ) Quality factor (Q) Bandwidth (BW), for the band pass output of the state variable filter.

(b)

(c) (d)

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R1 10 k R3 C1 10 k

Vo
ut

C2 0.022 F R4 0.022 F

Vin

R2

10 k

+
1 k

R7

+
100 k 1 k R5

1 k

R6

Figure Q2 (d)

Question 03

(a) (b)

Give five types of diode. Sketch the characteristic curve of a silicon Diode. Explain following rectification methods using circuit diagrams, and show the output for a sinusoidal input. i. ii. Half wave rectification Full wave rectifications (Centre tap and Bridge rectification).

(c) (d)

Sketch the ID Vs VD for a zener diode showing the various regions of operation. A voltage regulator circuit is shown in Figure Q3 (d). Calculate the values of Vo , IL , IS and I C. Assume that the transistor is Silicon.
IS RS = 10 IZ VZ = 9.1V VS =15 V T
1

IL IC RL = 40 VO

Figure Q3 (d)

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Question 04

(a) (b) (c) (d)

Write down the three bipolar transistor configurations for a NPN transistor. Draw the input (IB Vs VBE) and output (IC Vs VCE) characteristics of a bipolar transistor. Explain three biasing techniques used for a bipolar transistor with the circuit diagrams. Consider the common emitter transistor amplifier circuit as shown in Figure Q4 (d). The transistor is silicon.

i. ii.

Calculate the quiescent voltages and currents. Use Thevenin equivalent circuit. Find the small signal mid-band voltage gain of the circuit.

VCC

R1 Input

RC Output

R2

RE

Figure Q4 (d)

Where: VCC=12V, VBE = 0.6V, R1 =18k, R2 = 3.3k, RC = 1.5k, RE = 270, = 100

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