BC 546 ...

BC 549 NPN Si-Epitaxial PlanarTransistors

General Purpose Transistors NPN 500 mW TO-92 (10D3) 0.18 g

Power dissipation Verlustleistung Plastic case Kunststoffgehuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert
Standard Pinning 1=C 2=B 3=E

Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (TA = 25/C)

BC 546 Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation Verlustleistung Collector current Kollektorstrom (DC) Peak Coll. current Kollektor-Spitzenstrom Peak Base current Basis-Spitzenstrom Peak Emitter current Emitter-Spitzenstrom Junction temp. Sperrschichttemperatur Storage temperature Lagerungstemperatur B open B shorted E open C open VCE0 VCES VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 85 V 80 V 6V

Grenzwerte (TA = 25/C)

BC 547 45 V 50 V 50 V 6V 500 mW ) 100 mA 200 mA 200 mA 200 mA 150/C - 65+ 150/C
1

BC 548/549 30 V 30 V 30 V 5V

Characteristics, Tj = 25/C
Group A DC current gain Kollektor-Basis-Stromverhltnis VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 100 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain Stromverst. Input impedance Eingangsimpedanz Output admittance Ausgangsleitwert Reverse voltage transfer ratio Spannungsrckwirkung hfe hie hoe hre typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 hFE hFE hFE typ. 90 110...220 typ. 120

Kennwerte, Tj = 25/C
Group B typ. 150 200...450 typ. 200 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 Group C typ. 270 420...800 typ.400 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4

) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden 6 01.11.2003

General Purpose Transistors Characteristics, Tj = 25/C

Min. Collector saturation voltage Kollektor-Sttigungsspannung IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage Basis-Sttigungsspannung IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter voltage Basis-Emitter-Spannung VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Emitter cutoff current Kollektorreststrom VCE = 80 V VCE = 50 V VCE = 30 V VCE = 30 V VCE = 80 V, Tj = 125/C VCE = 50 V, Tj = 125/C VCE = 30 V, Tj = 125/C VCE = 30 V, Tj = 125/C VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, f = 1 MHz Emitter-Base Capacitance Emitter-Basis-Kapazitt VEB = 0.5 V, f = 1 MHz Noise figure Rauschma VCE = 5 V, IC = 200 :A RG = 2 kS f = 1 kHz, BC 547 BC 548 BC 549 F F F RthA CEB0 BC 546 BC 547 BC 548 BC 549 BC 546 BC 547 BC 548 BC 549 ICES ICES ICES ICES ICES ICES ICES ICES fT CCB0 VBE VBE 580 mV VBEsat VBEsat VCEsat VCEsat

BC 546 ... BC 549 Kennwerte, Tj = 25/C

Typ. 80 mV 200 mV 700 mV 900 mV 660 mV 0.2 nA 0.2 nA 0.2 nA 0.2 nA 300 MHz 3.5 pF 9 pF 2 dB 1.2 dB 1.2 dB Max. 200 mV 600 mV 700 mV 720 mV 15 nA 15 nA 15 nA 15 nA 4 :A 4 :A 4 :A 4 :A 6 pF 10 dB 4 dB 4 dB 250 K/W 1) BC 556 ... BC 559

Collector-Emitter cutoff current Kollektorreststrom

Gain-Bandwidth Product Transitfrequenz Collector-Base Capacitance Kollektor-Basis-Kapazitt

) f = 200 Hz

Thermal resistance junction to ambient air Wrmewiderstand Sperrschicht umgebende Luft Recommended complementary PNP transistors Empfohlene komplementre PNP-Transistoren

Available current gain groups per type Lieferbare Stromverstrkungsgruppen pro Typ

BC 546A BC 547A BC 548A

BC 546B BC 547B BC 548B BC 549B

BC 547C BC 548C BC 549C

) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden 01.11.2003

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.