Epitaxial growth of GaAs on Ge is a prerequisite for the integration of GaAs and Ge in the sub-22 nm CMOS nodes. Ge promises a four times larger hole mobility as compared to si.
Epitaxial growth of GaAs on Ge is a prerequisite for the integration of GaAs and Ge in the sub-22 nm CMOS nodes. Ge promises a four times larger hole mobility as compared to si.