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Patent Search SENSOR WITH DIODE SHORT FOR A NON-
Content VOLATILE RANDOM ACCESS
Terms &
Conditions FERROMAGNETIC MEMORY
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Law of Patents Latest bibliographic data on file with the International Bureau
Meetings Publication WO/2000/052699 International PCT/US2000/005699
E-mail Updates Number: Application No.: 02.03.2000
Contact Publication International Filing
Date: 08.09.2000 Date:
Related Links Chapter 2 Demand Filed: 02.10.2000
International Patent
Int. Class.: G11C 11/14 (2006.01), G11C 11/15 (2006.01)
Classification
Natural Language Applicants: PAGEANT TECHNOLOGIES (USA), INC. [US/US]; Suite B,
IPC Search 3205 Richard's Lane, Santa Fe, NM 87505 (US).
Standards & ESTANCIA LIMITED [--/--]; P.M.B. 2, Caribbean Place,
Documentation Providenciales, British West Indies, Turks/Caicos Islands (TC).
[ Printable version ] Inventor: LIENAU, Richard, M.; Suite B, 3205 Richard's Lane, Santa Fe,
NM 87505 (US).
Agent: STARKWEATHER, Michael, W.; Jones, Waldo, Holbrook &
McDonough, 170 South Main Street, Suite 1500, Salt Lake City, UT
84101-1644 (US).
Priority Data: 04.03.199
60/122,733 US
9
29.02.200
09/516,046 US
0
Title: MAGNETO RESISTOR SENSOR WITH DIODE SHORT FOR A
NON-VOLATILE RANDOM ACCESS FERROMAGNETIC
MEMORY
Abstract:
A non-volatile RAM device which utilizes a
plurality of ferromagnetic bits (8) each
surrounded by a write coil (15) for directing
the remnant polarity thereof is disclosed. The
direction of magnetic remnance in each bit
(8) is dictated by the direction of a current
induced into write coil (15). A magneto
sensor (9) comprising a magneto resistor
(18), coupled to diode (26), is placed
approximate each bit (8) and coupled to a sense line (20). The current
passing across magneto resistor (18) is biased in a direction either right
or left of the original current flow. When current is biased toward the
cathode end of diode (26), it is contrary to the preferred flow direction
of the diode (26) and does not flow easily there across. The ultimate
effect is that the serial resistance of magneto resistor (18) is increased,
allowing a smaller amount of current to pass into sense line (20). The
amount of current found in the sense line (20) between the bit (8) and
the detector (14) determines whether a digital value of '1' or '0' is stored
in the magnetic bit (8). A method for storing binary data is also
disclosed.
Designated AE, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR,
States: CU, CZ, DE, DK, DM, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU,
ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV,
MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD,
SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA,
ZW.
African Regional Intellectual Property Org. (ARIPO) (GH, GM, KE,
LS, MW, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD,
RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR,
GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG,
CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)