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772/SMA5111 - Compound Semiconductors

Lecture 3 - Simple Heterostructures - Outline Energy band review

Energy levels in semiconductors:

Zero reference, c, Eg, Ec, Ev

Homojunctions using bands - a review

Heterojunction band profiles

Abrupt junctions:

(the Depletion Approximation extended)

1. Issues new to heterojunctions: Dc, DEg, DEc, DEv 2. Alignment options/types 3. Type I heterojunctions: a. N-p: i. In equilibrium; ii. With applied bias b. P-n c. Iso-type: P-p, N-n
1. Motivation, concept 2. Carrier concentrations

Modulation doping:
Graded compositions:

1. In bulk regions 2. At heterojunctions (impact on spikes)

C. G. Fonstad, 2/03 Lecture 3 - Slide 1

Energy band edge picture - review

Band edge energies

The band edge energies

0 relative to the vacuum
reference level and to
Electron each other are a property
Energy of the semiconductor
Ec Electron affinity, c:
Ef Conduction band edge
to vacuum ref.
Energy gap, Eg:
Valence band edge
to conduction band edge

Ev Position qcs qFs

Eg

Fermi level
Depends additionally on the doping level no = Nc exp[-q(Ec-Ef)/kT] and thus Ec - Ef = (kT/q) ln (Nc/no) and/or po = Nv exp[-q(Ef-Ec)/kT] and thus Ef - Ec = (kT/q) ln (Nv/po) Work function, F: Fermi level to vacuum ref.
C. G. Fonstad, 2/03 Lecture 3 - Slide 2

Homojunctions - band picture, depletion approximation

Band picture
a. Isolated n- and p-type:
0 qcs Ec Efn Eg Ev n-type
i. Have same vacuum ref., ii. Fermi levels differ iii. Both materials neutral

qFsn

qcs

qFsp Ec

Eg Efp Ev p-type

C. G. Fonstad, 2/03

Lecture 3 - Slide 3

Homojunctions - band picture, depletion approximation

Band picture, cont.
b. Electrically connected:
i. ii. iii. iv. Charge shifts between sides Fermi levels shift until equal Vacuum ref. is now -qf(x) where f(x) = (q/e)r(x) dx dx Depletion approximation is a good estimate of r(x)

-qf(x)

-qf(x) qcs Ec (x) Efn Eg Ev(x) n-type -x p 0 xn

qcs Ec (x) Eg Efp Ev(x)

x
p-type

Lecture 3 - Slide 4

C. G. Fonstad, 2/03

Heterojunctions - band picture, depletion approximation

Band picture
a. Isolated N- and p-type:
0 qcN EcN
EfN
EgN EvN Wide band
gap side N-type Egp Efp Evp Narrow band gap side p-type qFsN qcp qFsp Ecp
(taking an N-p junction as the example)

Similar to homojunction except that now the two materials have different electron affinities, energy gaps, dielectric constants, and effective masses.
C. G. Fonstad, 2/03 Lecture 3 - Slide 5

Heterojunctions - band picture, depletion approximation

Band picture, cont.
b. Electrically connected:
i. ii. iii. iv. v. Charge shifts between sides Fermi levels shift until equal Vacuum ref. is now -qf(x) where f(x) = (q/e)r(x) dx dx Ec(x) is -qf(x) - c(x) and Ev(x) = -qf(x) - [c(x) +Eg(x)] Depletion approximation is a good estimate of r(x) DEc = |q(cp - cN)| qcp qFsp 0

qcN
EcN
EfN

qFsN Egp

Ecp

Efp Evp EgN

EvN
C. G. Fonstad, 2/03

DEv = |q(cp - cN) + Egp - EgN| -x p 0 xn

Lecture 3 - Slide 6

Heterojunctions - band picture, depletion approximation

Band picture, cont.
c. Useful Observations:
i. The final electrostatic potential profile, f(x), is primarily a consequence of the doping levels. ii. The band-edge profiles, Ec(x) and Ev(x), are additionally a consequence of the electron affinity and energy gap profiles, c(x) and Eg(x), respectively. iii. In an abrupt heterojunction there are frequently discontinuities in the conduction and valence band edges at the junction.

C. G. Fonstad, 2/03

Lecture 3 - Slide 7