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A transmission gate, or analog switch, is defined as an electronic element that will selectively block or pass a signal level from the input to the output.
This solid-state switch is comprised of a pMOS transistor and nMOS transistor. The control gates are biased in a complementary manner so that both
transistors are either on or off.
When the voltage on node A is a Logic 1, the complementary Logic 0 is applied to node active-low A, allowing both transistors to conduct and pass
the signal at N to OUT. When the voltage on node active-low A is a Logic 0, the complementary Logic 1 is applied to node A, turning both transistors
off and forcing a high-impedance condition on both the N and OUT nodes. This high-impedance condition represents the third "state" (high, low, or
high-Z) that the DS3690 channel may reflect downstream.
The schematic diagram (igure 1) includes the arbitrary labels for N and OUT, as the circuit will operate in an identical manner if those labels were
reversed. This design provides true bidirectional connectivity without degradation of the input signal.
igure 1. Schematic representation of a transmission gate.
The common circuit symbol for a transmission gate depicts the bidirectional nature of the circuit's operation (igure 2).
igure 2. Circuit symbol.
TOP!C: NNOS is faster then PNOS
Posted by: jolly S/3/2004 3:48:48 AN Category: Semiconductors
Questions posted: 1 Comments Posted: 0
it is said that NMOS is faster then PMOS because mobility of electrons is around
3 times more than holes. MOS due to majority carrier device is effected by this.
Can anybody tell why electrons show such a Character?
My arguement is when hole physically does not have any mass in comparison to
electron than why it does not have more mobility....
Posted by: spraveen87 9/15/2010 5:54:53 AM
Comments Posted:1
hello the answers are right , one small suggestion , starting of the answers are correct but ending is abrupt so if we can have a smooth ending it would help, thank you
Posted by: sreedhar 3/15/2006 7:45:03 AM
Comments Posted:28 Questions Posted:1
Hi pavan,
Answer for 1 Q
The switching speed of nor gates is higher thatn pmos .We prefer NAND gates.
n nand gates pmos is paralle where as in nor gate pmos is serial . So time taken in nor will be more because of its structure.
NMOS is 2 times faster than PMOS
Sreedhar
Posted by: vivek1980 7/27/2004 6:02:29 AM
Comments Posted:3
according to me, anilksaini has given correct answer. would try to explain this in another way.... Hole is the effect where as electron is the cause i.e. when electrons move then
only a hole is created. As there are inertial delays so it is obvious that cause will be faster compared to the effect.So, NMOS are 2.5 times faster than the electrons.
Posted by: vivek1980 7/27/2004 6:01:29 AM
Comments Posted:3
according to me, anilksaini has given correct answer. would try to explain this in another way.... Hole is the effect where as electron is the cause i.e. when electrons move then
only a hole is created. As there are inertial delays so it is obvious that cause will be faster compared to the effect.So, NMOS are 2.5 times faster than the electrons.
Posted by: shwetank 7/6/2004 5:38:34 AM
Comments Posted:8 Questions Posted:2
hoel is basically proton and the mass of
electron is less than proton due to which mobility of electron is more
Posted by: aniIksaini 6/22/2004 3:30:54 AM
Comments Posted:5 Questions Posted:3
effective mass of hole is greater than electron.that'why electron have high mobility than hole.
What is the difference between NMOS and PMOS?
NMOS is built with n-type source and drain and a p-type substrate, while PMOS is built with p-type source and drain and a n-type substrate. n a NMOS, carriers
are electrons, while in a PMOS, carriers are holes. When a high voltage is applied to the gate, NMOS will conduct, while PMOS will not. Furthermore, when a low
voltage is applied in the gate, NMOS will not conduct and PMOS will conduct. NMOS are considered to be faster than PMOS, since the carriers in NMOS, which
are electrons, travel twice as fast as holes, which are the carriers in PMOS. But PMOS devices are more immune to noise than NMOS devices. Furthermore,
NMOS Cs would be smaller than PMOS Cs (that give the same functionality), since the NMOS can provide one-half of the impedance provided by a PMOS
(which has the same geometry and operating conditions).
Read more: http://www.differencebetween.com/difference-between-nmos-and-vs-pmos/#ixzz1eK0rF6Gj