2SC4408

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4408
Power Amplifier Applications Power Switching Applications
Unit: mm

Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 500 ns (typ.) Complementary to 2SA1680

Maximum Ratings (Ta = 25C)

Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 50 6 2 0.2 900 150 55 to 150 Unit V V V A A mW C C

JEDEC JEITA TOSHIBA

TO-92MOD 2-5J1A

Weight: 0.36 g (typ.)

Electrical Characteristics (Ta = 25C)

Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 100 mA VCB = 10 V, IC = 0, f = 1 MHz Output 30 Min 50 120 40 Typ. 100 14 0.1 Max 1.0 1.0 400 0.5 1.2 V V MHz pF Unit A A V

20 s

Input IB2

IB1 IB2

Switching time

Storage time

tstg

0.5

30 V Fall time tf IB1 = IB2 = 0.05 A, duty cycle 1% 0.1

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Marking

C4408

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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IC VCE
50 100 1.6 30 20 15

hFE IC
hFE
500 300 100 50 30 10 0.001 Common emitter VCE = 2 V 0.03 0.01 0.03 0.1 0.3 1 3 5 Ta = 100C 25

2.0

DC current gain

IC (A)

25

10 1.2

Collector current

0.8

6 4

Collector current IC (A)

0.4

IB = 2 mA Common emitter 1 2 3 Ta = 25C 4 5

0 0

Collector-emitter voltage

VCE

(V)

VCE (sat) IC
3

VBE (sat) IC
10 5 Common emitter IC/IB = 20

Collector-emitter saturation voltage VCE (sat) (V)

1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001

Base-emitter saturation voltage VBE (sat) (V)

Common emitter IC/IB = 20

3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.001 Ta = 25C 100 25

Ta = 100C

25 25

0.003

0.01

0.03

0.1

0.3

3 5

0.003

0.01

0.03

0.1

0.3

3 5

Collector current IC (A)

Collector current IC

(A)

Safe Operating Area IC VBE

2.0 Common emitter 1.6 10 VCE = 2 V *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature.

IC (A)

5 IC max (pulsed)* 3 IC max (continuous) 10 ms*

IC (A)

1 ms*

Collector current

1.2

Collector current

1 0.5 0.3 DC operation (Ta = 25C)

100 ms*

0.8

Ta = 100C

25

25

VCEO max 0.1 0.05

0.4

0 0

0.2

0.4

0.6

0.8

1.0

1.2

0.03 0.1

0.3

10

30

100

Base-emitter voltage

VBE

(V)

Collector-emitter voltage

VCE (V)

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

030619EAA

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

2004-07-26