ID.No./Seat No. MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY, JAMSHORO. SECOND TERM THIRD YEAR (6TH TERM) B.E.

(TELECOMMUNICATION) REGULAR EXAMINATION 2008 OF 06-BATCH OPTO-ELECTRONICS Dated: 13-12-2008. Time Allowed: 03 Hours. NOTE: ATTEMPT ANY FIVE QUESTIONS. Q.No. 01 Max.Marks 80 Marks

(a) State Snells law for refraction and outline its significant in fiber-optic cables. Also define critical angle? [06] (b) What are acceptance angle and acceptance cone for a fiber cable? Also define Numerical Aperture? [06] (c) For a multimode step-index fiber with a glass core (n1=1.5) and a fused quartz cladding (n2=1.46), determine the critical angle ( c), acceptance angle, and numerical aperture. The source to fiber medium is air? [04] Briefly describe the processes by which light can be emitted from an atom. Discuss the requirement for population inversion in order that stimulated emission may dominate over spontaneous emission. Illustrate your answer with an energy level diagram of a common non-semiconductor laser? [08] Give few good reasons in support of the fact that silicon and germanium are not used in Light Emitting Diodes (LEDs)? [04] The energy bandgap for lightly doped gallium arsenide at room temperature is 1.8 eV. When the material is heavily doped it is found that the lasing transitions involve bandtail states which effectively reduce the bandgap transition by 10%. Determine the difference in the emission wavelength of the light between the lightly doped and this heavily doped case? [04]

02

(a)

(b) (c)

03

(a) Why we use stripe geometry? What are laser modes? How do we achieve single mode operation? [06] (b) Define following injection laser characteristics? i Threshold current temperature dependence ii Dynamic Response iii Frequency Chirp [06]

(c)

The longitudinal modes of a gallium arsenide injection laser emitting at a wavelength of 0.87 m are separated in frequency by 278GHz. Determine the wavelength of the optical cavity and the number of longitudinal modes emitted. The refractive index of gallium arsenide is 3.6. [04] Calculate the responsivity of a p-i-n photodiode at 1.3 and 1.55 m if the quantum efficiency is 80%. Why is the photodiode more responsive at 1.55 m? [06]

04 (a)

(b) Photons at a rate 0f 1010 per sec are incident on an APD with responsivity of 6 A/W. Calculate the quantum efficiency and the photocurrent at the operating wavelength of 1.5 m for an APD gain of 10? [06] (c) Prove that the 3-dB optical bandwidth of a LED is related to the 3-dB electrical bandwidth by the relation f3dB (optical) = f3dB (electrical). [04] Contd on P/-2.

(-2-) 05 (a) Derive the expressions for LED power and efficiency? (b) [10]

A planar LED is fabricated from gallium arsenide which has a refractive index of 3.6. (i) Calculate the optical power emitted into air as a percentage of the internal optical power for the device when the transmission factor at the crystal-air interface is 0.68. (ii) When the optical power generated internally is 50% of the electrical power supplied, determine the external power efficiency. [06] Explain in detail optical detection principle in P-N photodiode and compare this device with the P-I-N photodiode.

06 (a) (b) (c) 07 (a)

[08]

Derive an expression for the responsivity of an intrinsic photodetector in terms of the quantum efficiency of the device and the wavelength of the incident radiation. [06] What is spectral responsivity phenomenon in photodiodes. Explain following modes of operation of a photodiode. (i) Photovoltaic mode (ii) Photo Conductive mode (iii) Avalanche [02] [09]

(b)

The quantum efficiency of a particular silicon RAPD is 80% for the detection of radiation at a wavelength of 0.9m. When the incident optical power is 0.5W, the output current from the device (after avalanche gain) is 11A. Determine the multiplication factor of the photodiode under these conditions. [07] Discuss all of the following? i) Surface Emitter LEDs ii) Dark Current iii) Radiative and Non-radiative recombination iv) Noise Equivalent Power (NEP) [16]

08

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