I.

Introduction:

Electronic devices such as diodes, transistors and integrated circuits are made of a semi conductive material. To properly understand how these devices work, a basic knowledge of atoms structure and the interaction of atomic particles must be known. A semiconductor diode is a device with a single pn junction. The importance of the diode in electronic circuits cannot be overemphasized. Its ability to conduct current in one direction while blocking current in the other direction is essential to the operation of many types of circuits. One circuit in particular is the ac rectifier; other important applications are circuits such as diode limiters, diode clampers, and diode voltage multiplier. A data sheet is going to be discussed for specific diodes in this experiment. Finally, the internal potentials of the semiconductors make the diode have a current to voltage relationship of: I=I. (e^v/kt-1)

II. Objective
I. Knowing the function of each type of diodes.

II. To know the difference between the silicon and zener diodes. III. To understand the characteristics of diode devices.

IV. Theory
Firstly, a diode is connected with a forward bias. The p-type material is connected to the positive terminal and the n-type negative terminal, the positive terminal of the source (battery, electricity) will push the holes to p region towards the junction. Hence, the recombination cross occurs and the number of negative Ions in the p-region near the junction decrease. Negative terminal will push the free electrons in the n-region forwards the junction and recombine with the positive Ions decrease .as a result, the number of positive and negative Ions decrease and the width of the depletion region will decrease. Since the potential barrier is now reduced, the electrons in the n-type will easily move to the p-type. The negative terminal also helps to push the electrons and the positive terminal helps to pull electrons. Secondly, a diode connected for reverse bias. If external potential of v is applied across the pn junction at higher then VD, the positive terminal of the battery pull the free electrons from the n region and more atom will become positive Ions. The number of Pori tire Ions in the region will increase. The negative terminal pulls free holes from the p region and the number of negative Ions in the p-region increase. Hence, the width

of depletion region increases. So, that will make it harder for the electrons to across the depletion region.
V.

Apparatus/method:

Analog trainer Breadboard Bench Digital Multimeter Resistor / Variable Resistor (2k , 10k) Diode / zener diode (1N4002, 1N5344B) A circuit must be connected as shown in figure 1, then a 12v must be connected to the input terminals then a VR2 must be adjusted to apply voltage to two terminals of the diode as shown in table 1 form 0.1v to 0.7v, and the corresponding I(F) (forward current) must be viewed. A VR2 must be used to continuously adjust V (F) to view how I (F) changes, then the result must be recorded. After the connection of the diodes must be reversed the voltmeter and ammeter must be connected. The -12v must be connected to the input terminals, then adjust VR2 to apply reverse voltage to 2 terminals of the diode as shown in table 2 form 0v to 0.5v, and corresponding I (reverse current) must be viewed, then the result must be recorded in table 2. At last, the values of table 1 and table 2 must be plotted on the graph 1

VI. Result
I. plotting the v-1 characteristics curve of silicon Diode: Table 1
Vf (V) If (mA) 0.1 0.002 0.2 0.003 0.3 0.006 0.4 0.032 0.5 0.229 0.6 1.609 0.7 5.690

Table 2
Vr (-V) Ir (mA) 0.1 0.003 0.2 0.003 0.3 0.003 0.4 0.003 0.5 0.003 0.6 0.003 0.7 0.003

II. plotting the v-1 characteristics curve of zener diode: Table 3

Vf (-V) Ir(mR) 0.1 0.004 0.2 0.004 0.3 0.005 0.4 0.005 0.5 0.018 0.6 0.331 0.7 5.71

Table 4
Vr (-V) Ir (mA) 1 0.972 2 0.972 3 0.973 4 0.971 5 0.972 6 0.971 7 0.972 8 2.097

VII.

Discussion/recommendation

In this section a discussion and analyses of the result of the experiment on the silicon and zener diodes, the discussion will be based on the calculations which had been taking during the experiment. It can be noticed in table 1 that I(f) (forward current-silicon) is increasing slowly, until a certain value then I(f) will increase sharply with the increase of V (f), because of the increase in the number of moving majority carriers across depletion region . Therefore, it can be noticed from table 2 (reveres currentsilicon) that the I almost equal until it reaches a point then it will decrease dramatically because of the majority movement across the depletion region. On the other hand, the measurements which had been taken and recorded in table 3 the current was very law, almost unnoticed, until it reaches the voltage 0.5V (forward current-zener), then its will get roughly higher. But in table 4 Ir are almost equal until the voltage reach the 8v then Ir will increase strongly.

VIII. Conclusion
As a conclusion, the experiment provided lots of information about the function and characteristics of diodes, which had been collected from the experiment on the characteristics of the silicon and zener diodes (forward bias and in the reverse bias on both diodes type), so the experiment has been finished successfully.

IX. Reference
I. Electronic Devices (conventional Current Version) the 7th

Edition. II. Fundamentals of electric circuits 3rd Edition. III. Physics Book (For the 2nd year of high school) IV. LAB 1 (ZES 1181), Experiment 2 (diodes).