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(
z
4nr
)
2
(1)
where G
r
and G
t
are the antenna gains of the receiver and the
transmitter respectively, z is the wavelength of the incoming
signal, and r is the distance between the transmitter and the
receiver. The tag antenna can be modeled as a voltage source
in series with a radiative resistance, R
A
. R
A
depends on the
antenna geometry. The amplitude of the voltage source V
A
is
given by I
A
= 8P
A
R
A
. The matching inductance L
match
and
the input capacitance of the chip, C
in
, form an LC-matching
network (Fig. 2). For this LC-network the input impedance
Z
in
at resonance frequency is (ideally) real and is given by,
R
n
=
R
1 +
2
(2)
where = RC
0
is the quality factor of the input impedance
[10], R is the perceived input resistance of the circuit at
resonance that also models series resistances of L
match
and C
in
and the real part of the rectifier input impedance (which
depends on the load current of the rectifier, number of
rectifier stages, and transistors dimensions). C
in
is the
equivalent input capacitance of the rectifier plus the parasitic
capacitances of the pads, ESD protection devices, etc, and
0
is the resonance frequency of the network. For maximum
power transfer, R
in
, i.e., real part of Z
in
at resonance, must be
equal to R
A
. Assuming proper impedance matching between
the antenna and the rectifier, the voltage gain of the matching
circuit which is the ratio of the output voltage amplitude
(input of the rectifier, V
rectifier
) to V
A
can be expressed as,
I
cct]c
I
A
=
1
2
1 +
2
=
1
2
1 + (RC
n
0
)
2
(3)
Figure 2. A simplified model of the antenna and the series matching network
Although according to (3) increasing C
in
(for a given R and
0
) increases voltage gain of the matching network, to keep
the antenna and the input impedance matched, R
A
must be
decreased (refer to (2)). Smaller R
A
produces smaller V
A
for a
given P
A
. It can be shown that for matched
antenna I
cct]c
= 2P
A
R regardless of C
in
. In this design,
we use C
in
which mostly consists of the parasitic capacitances
as a part of the matching network to match R to R
A
. It should
be noted that for very large C
in
, R
in
will be excessively small
and designing an antenna with such a low radiative resistance
to match R
in
becomes difficult. This fact puts a limit on the
maximum value for C
in
.
IV. Rectifier
In this section, the design of the proposed high-efficiency
rectifier stage (as shown in Fig. 3(c)) is described. There are
two major sources of power dissipation in rectifiers that lower
the efficiency. (1) The voltage drop across transistors of the
rectifier, and (2) the reverse current. We refer to both NMOS
and PMOS transistors of the rectifier as rectifier devices.
When the voltage across a rectifier device becomes positive
the current passes through the device and creates a forward
voltage drop across the device. This voltage drop depends on
the device aspect ratio, amount of the forward current, and
the value of its overdrive voltage, |I
uS
| - |I
th
|. When the
polarity of the voltage across a rectifier device changes the
device is expected to turn off and its current drops to zero.
However, in practice the rectifier devices pass some amount
of reverse current when they are off. This reverse current
dissipates power (note that |V
DS
| is not necessarily small when
the rectifier device is off). The proposed rectifier uses two
symmetrical Dickson stages [5] (Fig. 3(a)) connected to
different ends of the antenna, Fig. 3(b). Therefore, all
voltages with 0 and 180 phase shifts are produced. These
voltages are used to turn on rectifier devices with |I
uS
| =
I
cct]c
, where V
rectifier
is the maximum available voltage
swing. To overcome the reverse current problem, a same
amplitude |V
GS
| with the reverse polarity is applied to the
rectifier devices that are supposed to be off. In addition, a
PMOS transistor is added to each rectifier device to avoid
V
GD, NMOS
>> 0 or V
GD, PMOS
<< 0 when V
DS,NMOS
< 0 or V
DS,
PMOS
> 0 respectively and thus to avoid turning on the
transistors in the reverse direction. The bulk terminals of
PMOS transistors are connected to their drains. In this way
due to the body effect V
th
decreases when the transistor is
passing forward current and increases when the transistor is
supposed to be off. To avoid the additional cost of NMOS
transistors with isolated local substrate (triple-well
technology), all NMOS transistors share the same substrate
which is connected to ground. Therefore, V
th
of NMOS
transistors will increase (the increase in latter stages is more
4086
pronounce) which in turn will increase the forward voltage
drop on NMOS transistors of these stages. For generating
relatively large supply voltages this increase in NMOS V
th
becomes problematic. One possible solution is to replace the
NMOS transistors with PMOS transistors whose gates are
connected to the gate of the previous stage PMOS transistor.
However, in this design due to the relatively low target
supply voltage (1V) this approach is not used.
V. Tuning Circuit
As explained in Section II, the matching circuit
maximizes the power transfer at a certain frequency.
However, the matching network only shows the desirable
performance when the center frequency of the matching
network is sufficiently close to that of the incoming RF
signal. Thus, a tuning loop is used to ensure that the center
frequency of the matching network remains close to that of
the RF signal. This tuning loop is essential when using high-
Q matching network, because the center frequency of the
matching network can vary due to the environmental and
process variations. Furthermore, the signal frequency may
change within the range allowed in the protocol. The block
diagram of the tuning loop is shown in Fig. 4. To change the
center frequency a number of PMOS transistors are
connected in parallel to the input (refer to the inset on the top
right of the Fig. 4). V
ctrl
of each PMOS pair is connected to
one of the output bits of the up/down counter shown in
Fig. 5. Given that IN
1
and IN
2
are connected to RF inputs
their voltage level is low. Therefore, when the counter bit is
0, the equal capacitance seen from IN
1
and IN
2
is small (low
V
SG
) and the series resistance is large. When the counter bit
is 1 (i.e., V
DD
), the equivalent capacitance of the PMOS
structure is maximum (large V
SG
) while its resistance is
minimum. Note that series resistance with this capacitor is
not desirable because it lowers the Q and dissipates power.
In every clock cycle the counter turns on/off one of the
PMOS capacitors, and at the same time the supply voltage is
sampled. A Schmitt trigger comparator compares this sample
with the value of the supply voltage half a clock cycle later
and determines whether the change in the input capacitance
has resulted in an increase or decrease in the supply voltage
value. The result is a 0 or 1 signal named UP. UP = 1
means that the supply voltage has increased and UP = 0
means that the supply voltage has decreased. Based on this
knowledge, a finite state machine (FSM) decides whether the
counter should count up or down in the next clock cycle to
keep the output voltage rising, Fig. 6.
The designed counter has eight outputs, (Fig. 5). On every
falling edge of CLK, the counter turns one of the 0 output
bits to 1 if Up/Down control signal (the output of FSM) is
1, and it turns one of the 1 output bits to 0 if the control
signal is 0. Additional logic gates are used to make sure that
only those two flip flops whose values may change will see
the clock transitions, thus the counter avoids many
unnecessary changes in the internal nodes and its dynamic
power dissipation is significantly reduced. The dynamic
power consumption of the counter is almost independent of
the number of output bits and stays approximately the same if
more output bits are added.
Figure 3. (a) Dickson stage (b) two symmetrical stages connected to
different ends of the antenna (c) adding PMOS transistors to reduce reverse
current
Figure 4. The tuning loop
Figure 6. Finite State Machine
Table 1. Loop power consumption
V DD = 1 V DD = 0.4V
Counter 340nW 70nW
Schmitt
trigger
1W 260nW
Loop 1.36 W 340nW
Figure 5. Low-power Up/Down counter
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When the tag operation begins, the input network is not
tuned yet; therefore, the rectifier may not provide a large
voltage or current at its output. Thus the loop must be capable
of operating with a small supply voltage and with very low
power consumption. At this point the tuning loop turns on
while the rest of the chip is still off. The loop tunes the input
capacitance for the optimal output voltage. After a few
microseconds that the loop tunes the input capacitance, the
loop can be turned off by stopping the CLK signal and
turning off the bias current of the Schmitt trigger to save
power, meanwhile the counter keeps the optimal value of the
input capacitance. After the tuning, the rest of the chip can be
turned on. The loop can also remain functional while the rest
of the circuit is also working.
VI. Simulations and Results
The rectifier characteristic curves are shown in Fig. 7. The
output voltage of a four-stage rectifier is shown as a function
of input voltage amplitude for different load currents. Then a
50 antenna is connected to the chip (as shown in Fig. 4) via
two series matching inductors and the output of the rectifier is
connected to a 250k load resistor to model power
consumption of the chip. Fig. 8 shows the average output
voltage vs. frequency for three cases: (1) no-loop: the
matching network is fixed and no adaptive tuning is used (2)
loop on: the loop continuously tunes the input capacitance (3)
loop-off: the loop turns off after tuning to save power. As it
can be seen the loop keeps the output voltage high over a
wide frequency rang. Based on the simulations, the tuning
range of the tuning network is 860MHz to 960MHz. The
reason that the loop off graph is lower than the peak of no
loop graph is that the loop fluctuates around the optimum
input capacitance. So the loop is likely to be turned off when
the input capacitance is not optimum. This reduces the
average output voltage. The breakdown of the power
consumption of the loop is shown in Table. 1. As can be seen
the counter does not consume much power especially for low
supply voltages. Performance comparison with previous
works is provided in Table 2.
Figure 7 Rectifiers output voltage vs. input voltage amplitude for different
load currents
Figure 8 Output voltage vs. frequency for 10 W input power, RLoad=250k.
Reference
0
0.5
1
1.5
2
2.5
3
250 350 450 550 650 750 850
O
u
t
p
u
t
V
o
l
t
a
g
e
(
V
)
V in (mV)
10uA
7.5uA
5.5uA
3.25uA
1uA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
840 860 880 900 920 940 960 980
O
u
t
p
u
t
v
o
l
t
a
g
e
(
V
)
Frequency (MHz)
250k loop on
250k loop off
250k no loop
Table 2. Comparison of different stages
[6] [7] [8] [3] This
work
Technology 0.35m 0.30 m 0.18 m
(zero-Vth
option)
0.18 m 0.13 m
Load 80 W 0.4 A,
1.5V
1
14 A,
0.974V
2.50 A,
0.4V
4 A,
1.25V
Efficiency,
input power
36.6%,
250 W
1.2% ,
40 W
33.69 % 16.7 %,
6 W
2
50%
2
,
10W
# of stages 2 6 10 2 4
1. 11% efficiency in -6dBm
2. Loop turned off
[1] EPC
TM
Radio-Frequency Identity Protocols Class-1 Generation-2 UHF RFID
Protocol for Communications at 860-960MHz Version 1.0.9
[2] Barnett, R.E., Jin Liu & Lazar, S. 2009, "A RF to DC Voltage Conversion
Model for Multi-Stage Rectifiers in UHF RFID Transponders", Solid-State
Circuits, IEEE Journal of, vol. 44; 44, no. 2, pp. 354-370.
[3] Mandal, S. & Sarpeshkar, R. 2007, "Low-Power CMOS Rectifier Design for
RFID Applications", Circuits and Systems I: Regular Papers, IEEE
Transactions on, vol. 54; 54, no. 6, pp. 1177-1188.
[4] Shameli, A., Safarian, A., Rofougaran, A., Rofougaran, M. & De Flaviis, F.
2007, "Power Harvester Design for Passive UHF RFID Tag Using a Voltage
Boosting Technique", Microwave Theory and Techniques, IEEE Transactions
on, vol. 55; 55, no. 6, pp. 1089-1097.
[5] Dickson, J.F. 1976, "On-chip high-voltage generation in MNOS integrated
circuits using an improved voltage multiplier technique", Solid-State Circuits,
IEEE Journal of, vol. 11; 11, no. 3, pp. 374-378.
[6] Nakamoto, H., Yamazaki, D., Yamamoto, T., Kurata, H.,
Yamada,S. Mukiada, K., Ninomiya, T., Ohkawa, T., Masui, S. & Gotoh, K.
2007, "A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric
RAM in 0.35-m Technology", Solid-State Circuits, IEEE Journal of, vol. 42,
no. 1, pp. 101-110.
[7] Umeda, T., Yoshida, H., Sekine, S., Fujita, Y., Suzuki, T. & Otaka, S. 2006,
"A 950-MHz rectifier circuit for sensor network tags with 10-m distance",
Solid-State Circuits, IEEE Journal of, vol. 41; 41, no. 1, pp. 35-41.
[8] Jun Yi, Wing-Hung Ki & Chi-Ying Tsui 2007, "Analysis and Design Strategy
of UHF Micro-Power CMOS Rectifiers for Micro-Sensor and RFID
Applications", Circuits and Systems I: Regular Papers, IEEE Transactions
on, vol. 54; 54, no. 1, pp. 153-166.
[9] K. Finkenzeller, RFID Handbook: Fundamentals and Applications in
Contactless Smart Carts and Identification, 2
nd
ed. Chicester, U.K.: Wiley,
2003
[10] T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, 2
nd
ed.
Cambridge, U.K.: Cambridge Univ. Press, 2004.
VII. Conclusion
In this, a high-Q matching circuit in conjunction with an
automatic tuning circuit is used in a RF power harvesting
system to amplify small input RF signals. A rectifier bridge
is also proposed which can rectify small RF signals while
preventing the reverse currents to improve efficiency. A very
low power tuning counter is also presented. The power
consumption of this counter is considerably reduced by
avoiding unnecessary internal transitions. In simulations,
power efficiency of more that 50% is achieved.
4088