BZX85C...

Vishay Telefunken

Silicon Epitaxial Planar ZDiodes

Features
D D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances

Applications
94 9369

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25C Type Symbol PV Tj Tstg Value 1.3 175 65...+175 Unit W C C

Maximum Thermal Resistance

Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W

Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V

Document Number 85608 Rev. 3, 01-Apr-99

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BZX85C...
Vishay Telefunken
Type BZX85C... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75
1)

VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75

IZT mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4

for VZT and V 1) 2.5 to 2.9 2.8 to 3.2 3.1 to 3.5 3.4 to 3.8 3.7 to 4.1 4.0 to 4.6 4.4 to 5.0 4.8 to 5.4 5.2 to 6.0 5.8 to 6.6 6.4 to 7.2 7.0 to 7.9 7.7 to 8.7 8.5 to 9.6 9.4 to 10.6 10.4 to 11.6 11.4 to 12.7 12.4 to 14.1 13.8 to 15.6 15.3 to 17.1 16.8 to 19.1 18.8 to 21.2 20.8 to 23.3 22.8 to 25.6 25.1 to 28.9 28 to 32 31 to 35 34 to 38 37 to 41 40 to 46 44 to 50 48 to 54 52 to 60 58 to 66 64 to 72 70 to 79

rzjT

rzjk at

< 20 < 20 < 20 < 20 < 15 < 13 < 13 < 10 <7 <4 < 3.5 <3 <5 <5 <7 <8 <9 < 10 < 15 < 15 < 20 < 24 < 25 < 25 < 30 < 30 < 35 < 40 < 50 < 50 < 90 < 115 < 120 < 125 < 130 < 135

< 400 < 400 < 400 < 500 < 500 < 500 < 500 < 500 < 400 < 300 < 300 < 200 < 200 < 200 < 200 < 300 < 350 < 400 < 500 < 500 < 500 < 600 < 600 < 600 < 750 < 1000 < 1000 < 1000 < 1000 < 1000 < 1500 < 1500 < 2000 < 2000 < 2000 < 2000

IZK mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25

mA

IR at

< 150 < 100 < 40 < 20 < 10 <3 <3 <1 <1 <1 <1 <1 <1 <1 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5

VR V 1 1 1 1 1 1 1 1.5 2 3 4 4.5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56

TKVZ %/K 0.08 to 0.05 0.08 to 0.05 0.08 to 0.05 0.08 to 0.05 0.07 to 0.02 0.07 to 0.01 0.03 to +0.04 0.01 to +0.04 0 to +0.045 +0.01 to +0.055 +0.015 to +0.06 +0.02 to +0.065 0.03 to 0.07 0.035 to 0.075 0.04 to 0.08 0.045 to 0.08 0.045 to 0.085 0.05 to 0.085 0.055 to 0.09 0.055 to 0.09 0.06 to 0.09 0.06 to 0.09 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095

Tighter tolerances available on request: BZX85B... 2% of VZnom

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Document Number 85608 Rev. 3, 01-Apr-99

BZX85C...
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
2.0 Ptot Total Power Dissipation ( W ) C D Diode Capacitance ( pF ) 1000

1.6

100 VR = 0V VR = 2V VR = 5V VR = 20V VR = 30V

1.2

l=4mm

0.8 l=20mm 0.4 0 50 l=10mm

10

1 0 50 100 150 200

95 9616

f = 1 MHz Tamb= 25C 0 10 20 30 40 50 60

95 9612

Tamb Ambient Temperature ( C )

VZ Z-Voltage ( V )

Figure 1. Total Power Dissipation vs. Ambient Temperature

R thJA Therm. Resist. Junction / Ambient ( K/W ) r Z Differential Z-Resistance ( W ) 250

Figure 3. Diode Capacitance vs. ZVoltage

1000 IZ=1mA 100 2mA 5mA 10mA 20mA 10

200

150 l 100 50 0 0 5 10 15 TL=constant 20 25 30 l

1 1
95 9615

10 VZ Z-Voltage ( V )

100

95 9613

l Lead Length ( mm )

Figure 4. Differential ZResistance vs. ZVoltage

Z thp Thermal Resistance for Pulse Cond. (K/W)

Figure 2. Thermal Resistance vs. Lead Length

1000 tp/T=0.01 tp/T=0.1 100 tp/T=0.5 tp/T=0.2 10 Single Pulse iZM=(VZ+(VZ2+4rzj 1 101 100 101 tp Pulse Length ( ms ) 102 tp/T=0.05 tp/T=0.02

DT=TjmaxTamb

RthJA=110K/W

DT/Zthp)1/2)/(2rzj)
103

95 9614

Figure 5. Thermal Response

Document Number 85608 Rev. 3, 01-Apr-99

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BZX85C...
Vishay Telefunken Dimensions in mm
Cathode Identification
technical drawings according to DIN specifications 94 9368

0.85 max.

2.5 max.

Standard Glass Case 54 B 2 DIN 41880 JEDEC DO 41 Weight max. 0.3 g

26 min.

4.1 max.

26 min.

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Document Number 85608 Rev. 3, 01-Apr-99

BZX85C...
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 85608 Rev. 3, 01-Apr-99

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